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Quantum dot and preparation method and application thereof

A quantum dot and preparation process technology, applied in the field of quantum dots, can solve the problems of failing to meet commercial requirements and low external quantum efficiency, and achieve the effects of meeting commercial requirements, low injection barriers, and favorable electron injection

Active Publication Date: 2021-05-21
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the optoelectronic devices of this kind of blue light quantum dots can operate at 50cd / m 2 ~200cd / m 2 Under the brightness of the actual commercial demand, the EQE decays to 3%, and the external quantum efficiency is extremely low, which is far below the commercial demand.

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  • Quantum dot and preparation method and application thereof

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preparation example Construction

[0053] The present invention also provides a method for preparing the above-mentioned quantum dots, comprising the steps of:

[0054] S1, preparing the kernel;

[0055] S2, mixing the inner core with the first zinc precursor, aliphatic amine, and solvent to form a first precursor solution, and then adding the first cadmium precursor and the first sulfur precursor to the first precursor solution at a uniform speed respectively or together to form the second precursor solution Two precursor solutions, the molar ratio of Cd element to S element in the second precursor solution is 0.15:1~0.4:1;

[0056] S3, reacting the second precursor solution at the first temperature to coat the surface of the inner core to form a shell layer to obtain quantum dots.

[0057] In step S1, the preparation process of the core includes: mixing the second zinc precursor, the first selenium precursor, the second cadmium precursor, and the solvent, and reacting at a second temperature to obtain a solu...

Embodiment 1

[0100] Take 2mmol basic zinc carbonate, 1.4mL oleic acid, and 12g octadecene, and raise the temperature to 280°C under the protection of nitrogen atmosphere to form a clear and transparent solution. Then inject 1.0mL 0.5mmol / mL Se-ODE suspension and 0.2mL 0.2mmol / mL cadmium oleate ODE precursor in sequence, raise the temperature to 300°C, add 0.5mL 2mmol / mL Se-TBP solution, and continue to heat up React at 310°C for 20 minutes. Purify to obtain 4.0nm CdZnSe quantum dots, which are dissolved in 10mL octadecene for later use.

[0101] Take 5.0 mL of the above-mentioned CdZnSe quantum dot solution, 10 mmol of zinc acetate, 25 mmol of oleic acid and 10 g of ODE, mix them, and raise the temperature to 150 ° C for 30 min under the protection of nitrogen. Then add 1mL oleylamine, raise the temperature to 300°C, and start to add Cd-ODE-S-TBP mixed solution (9mL 0.1mmol / mL cadmium oleate ODE solution mixed with 3mL 2mmol / mL S-TBP, Cd element and S element The molar ratio is 0.15:1), ...

Embodiment 2

[0103] Take 2mmol basic zinc carbonate, 1.4mL oleic acid, and 12g octadecene, and raise the temperature to 280°C under the protection of nitrogen atmosphere to form a clear and transparent solution. Then inject 1.0mL of 0.5mmol / mL Se-ODE suspension and 0.4mL of 0.2mmol / mL cadmium oleate ODE precursor in sequence, raise the temperature to 300°C, add 0.5mL of 2mmol / mL Se-TBP solution, and continue to heat up React at 310°C for 60 minutes. Purify to obtain 5.5nm CdZnSe quantum dots, which are dissolved in 10mL octadecene for later use.

[0104] Take 5.0 mL of the above-mentioned CdZnSe quantum dot solution, 10 mmol of zinc acetate, 25 mmol of oleic acid and 10 g of ODE, mix them, and raise the temperature to 150 ° C for 30 min under the protection of nitrogen. Then add 1g of octadecylamine, raise the temperature to 300°C, start to add Cd-ODE-S-TBP mixed solution (8mL 0.1mmol / mL cadmium oleate ODE solution mixed with 2mL 2mmol / mL S-TBP, Cd element and S The molar ratio of the el...

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Abstract

The invention relates to a quantum dot and a preparation method and application thereof. The quantum dot comprises an inner core and a shell layer wrapping the inner core, the inner core is made of CdZnSe, the shell layer is made of CdZnS, and the molar ratio of Cd element to S element in the shell layer is 0.15: 1-0.4: 1. The preparation method comprises the following steps: preparing an inner core, mixing the inner core with a first zinc precursor, aliphatic amine and a solvent to form a first precursor solution, respectively or jointly adding a first cadmium precursor and a first sulfur precursor into the first precursor solution at a constant speed to form a second precursor solution, wherein the molar ratio of the element Cd to the element S in the second precursor solution is 0.15: 1-0.4: 1; and reacting the second precursor solution at a first temperature to coat the surface of the inner core to form a shell layer so as to obtain the quantum dot. The energy level structure of the quantum dot is better matched with a hole and an electron transport layer, the carrier injection barrier is low, after the quantum dot is applied to a photoelectric device, under the working current of 5-20 mA / cm < 2 >, the EQE reaches the maximum value, the service life of the photoelectric device is longer, and the commercialization requirement is better met.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to quantum dots and their preparation methods and applications. Background technique [0002] At present, the external quantum efficiency (EQE) of CdZnS / ZnS, CdZnSeS / ZnS, ZnCdSe / ZnS and other blue light quantum dots has reached more than 10%, and the maximum brightness has exceeded 10000cd / m 2 . However, the outer layer of this type of blue light quantum dots is covered with a thicker ZnS shell, resulting in a deeper HOMO and a higher LUMO of blue light quantum dots, which is not conducive to the effective injection of carriers, making the blue light quantum dots The life of optoelectronic devices generally does not exceed 1000 hours, which is far from meeting the minimum requirements for commercialization. [0003] In addition, in the prior art, it is proposed to coat ZnCdSe with a ZnSe shell layer with a thickness of about 7nm, which can effectively improve the HOMO of blue...

Claims

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Application Information

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IPC IPC(8): C09K11/88C09K11/56C09K11/02H01L33/50
CPCC09K11/883C09K11/565C09K11/02H01L33/502H01L2933/0041C09K11/88C09K11/56C09K11/54H10K50/115B82Y20/00B82Y30/00B82Y40/00
Inventor 胡保忠高远毛雁宏李光旭
Owner NANJING TECH CORP LTD
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