CdGeAs2 single-crystal growing method capable of compensating for cadmium element

Abstract

The invention discloses a CdGeAs2 single-crystal growing method capable of compensating for a cadmium element. The method adopts a vertical gradient freeze (VGF) growth device to control the growth process of a CdGeAs2 single crystal compensated by the Cd element, the VGF growth device comprises a single-crystal growth crucible composed of a quartz raw material crucible and a flat-bottom quartz crucible and a five-temperature zone growth furnace, the quartz raw material crucible part is set as a crystal growth area, the flat-bottom quartz crucible is set as an element compensation area, the element compensation area is located at the lower part of the single-crystal growth crucible, and the two areas communicate with each other through an element compensation tube located on the side wallof the growth crucible; and CdGeAs2 and Cd raw materials are put in the two-layer crucible, growth temperature of the CdGeAs2 single crystal is controlled in different temperature zones and steps, andthe Cd element is compensated in the single-crystal growth process, so that the Cd element located at the head and tail ends of the crystal is uniformly distributed, the problem of non-uniform single-crystal performance caused by inconsistence of the Cd element is solved, an effective use volume of the single crystal is increased, and growth costs of the CdGeAs2 single crystal are reduced.

Description

technical field [0001] The invention belongs to the field of single crystal growth, in particular to a cadmium arsenic germanium (CdGeAs) that can compensate for cadmium (Cd) elements. 2 ) single crystal growth method. Background technique [0002] CdGeAs 2 Single crystal is a kind of mid-to-far infrared nonlinear optical crystal with outstanding performance and broad application prospects. First, CdGeAs 2 The nonlinear optical coefficient of the single crystal is the highest among the known crystals, up to 236pm / V, which is more than 2-3 times that of the known nonlinear optical crystals; secondly, the crystal has a suitable birefringence gradient and can achieve phase matching Wide wavelength range; again, CdGeAs 2 The hardness of the single crystal is moderate, it can be processed effectively, and the laser damage threshold is high. Devices based on this crystal have the characteristics of high stability, small size, light weight, etc., and can be applied to high-pow...

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Problems solved by technology

[0004] The invention adopts vertical gradient solidification method (VGF) to grow CdGeAs 2 Single crystal, the purpose is to solve the existing growing CdGeAs 2 In the case of single crystal, the Cd content at the top and bottom of the grown single crystal varies greatly, resulting in inconsistent performance, improving the utilization rate of growing single crystal, and reducing CdGeAs 2 Single Crystal Growth Cost

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