Quantum dot and preparation method and application thereof

A technology of quantum dots and cores, applied in the field of quantum dots and their preparation, can solve problems such as low external quantum efficiency and failure to meet commercial requirements, achieve low injection barriers, meet commercial requirements, and facilitate electron injection Effect

Active Publication Date: 2022-07-29
NANJING TECH CORP LTD
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Problems solved by technology

Therefore, the optoelectronic devices of this kind of blue light quantum dots can operate at 50cd / m 2 ~200cd / m 2 Under the brightness of the actual commercial demand, the EQE decays to 3%, and the external quantum efficiency is extremely low, which is far below the commercial demand.

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  • Quantum dot and preparation method and application thereof

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preparation example Construction

[0053] The present invention also provides a method for preparing the above quantum dots, comprising the steps of:

[0054] S1, prepare the kernel;

[0055] S2, mixing the inner core with the first zinc precursor, aliphatic amine, and a solvent to form a first precursor solution, and then adding the first cadmium precursor and the first sulfur precursor to the first precursor solution at a uniform rate, respectively or together, to form the first precursor solution. Second precursor solution, the molar ratio of Cd element to S element in the second precursor solution is 0.15:1 to 0.4:1;

[0056] S3, reacting the second precursor solution at the first temperature to coat the surface of the inner core to form a shell layer to obtain quantum dots.

[0057] In step S1, the preparation process of the inner core includes: mixing a second zinc precursor, a first selenium precursor, a second cadmium precursor, and a solvent, and reacting at a second temperature to obtain a solution c...

Embodiment 1

[0100] Take 2 mmol of basic zinc carbonate, 1.4 mL of oleic acid, and 12 g of octadecene, and under the protection of nitrogen atmosphere, the temperature is raised to 280° C. to form a clear and transparent solution. Then inject 1.0 mL 0.5 mmol / mL Se-ODE suspension and 0.2 mL 0.2 mmol / mL cadmium oleate ODE precursor in turn, heat up to 300°C, add 0.5 mL 2 mmol / mL Se-TBP solution, and continue to heat up Reaction at 310°C for 20min. After purification, 4.0 nm CdZnSe quantum dots were obtained, which were dissolved in 10 mL of octadecene for use.

[0101] Mix 5.0 mL of the above CdZnSe quantum dot solution, 10 mmol of zinc acetate, 25 mmol of oleic acid and 10 g of ODE, and under nitrogen protection, the temperature was raised to 150° C. for reaction for 30 min. Then add 1mL oleylamine, heat up to 300 ℃, start to add Cd-ODE-S-TBP mixed solution dropwise (9mL 0.1mmol / mL cadmium oleate ODE solution mixed with 3mL 2mmol / mL S-TBP, Cd element and S element The molar ratio is 0.15:...

Embodiment 2

[0103] Take 2 mmol of basic zinc carbonate, 1.4 mL of oleic acid, and 12 g of octadecene, and under the protection of nitrogen atmosphere, the temperature is raised to 280° C. to form a clear and transparent solution. Then inject 1.0mL 0.5mmol / mL Se-ODE suspension and 0.4mL 0.2mmol / mL cadmium oleate ODE precursor in turn, heat up to 300°C, add 0.5mL 2mmol / mL Se-TBP solution, continue to heat up Reaction at 310°C for 60min. The CdZnSe quantum dots of 5.5 nm were obtained by purification, which were dissolved in 10 mL of octadecene for use.

[0104] Mix 5.0 mL of the above CdZnSe quantum dot solution, 10 mmol of zinc acetate, 25 mmol of oleic acid and 10 g of ODE, and under nitrogen protection, the temperature was raised to 150° C. for reaction for 30 min. Then add 1 g of octadecylamine, heat up to 300 ° C, start to add Cd-ODE-S-TBP mixed solution (8 mL 0.1 mmol / mL cadmium oleate ODE solution and 2 mL 2 mmol / mL S-TBP mixed, Cd element and S The molar ratio of the elements was ...

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Abstract

The invention relates to a quantum dot and a preparation method and application thereof; the quantum dot comprises an inner core and a shell layer covering the inner core, the material of the inner core is CdZnSe, and the material of the shell layer is CdZnS, wherein the Cd element in the shell layer and the The molar ratio of the S element is 0.15:1 to 0.4:1. The preparation method includes: preparing an inner core, mixing the inner core with a first zinc precursor, aliphatic amine, and a solvent to form a first precursor solution, and then adding the first cadmium precursor and the first sulfur precursor to the first precursor separately or together at a uniform speed. The precursor solution is used to form a second precursor solution, and the molar ratio of Cd element and S element in the second precursor solution is 0.15:1 to 0.4:1; the second precursor solution is reacted at the first temperature to The surface of the inner core is coated to form a shell, resulting in quantum dots. The energy level structure of the quantum dots better matches the hole and electron transport layers, and the carrier injection barrier is lower. 2 At the same working current, the EQE reaches the maximum value, and the optoelectronic device has a longer life and is more suitable for commercialization.

Description

technical field [0001] The present invention relates to the technical field of quantum dots, in particular to quantum dots and a preparation method and application thereof. Background technique [0002] At present, the device external quantum efficiency (EQE) of blue quantum dots such as CdZnS / ZnS, CdZnSeS / ZnS, ZnCdSe / ZnS has reached more than 10%, and the maximum brightness has also exceeded 10000cd / m 2 . However, the outer layers of such blue-light quantum dots are all coated with a thick ZnS shell, resulting in a deep HOMO and a high LUMO of blue-light quantum dots, which is not conducive to the effective injection of carriers, making these blue-light quantum dots less effective. The life of optoelectronic devices generally does not exceed 1000 hours, which is far from meeting the minimum requirements for commercialization. [0003] In addition, it is proposed in the prior art to coat ZnCdSe with a ZnSe shell layer with a thickness of about 7 nm, which can effectively i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/88C09K11/56C09K11/02H01L33/50
CPCC09K11/883C09K11/565C09K11/02H01L33/502H01L2933/0041C09K11/88C09K11/56C09K11/54H10K50/115B82Y20/00B82Y30/00B82Y40/00
Inventor 胡保忠高远毛雁宏李光旭
Owner NANJING TECH CORP LTD
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