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Method for preparing CZTS thin film solar cell based on full vacuum method

A thin-film solar cell, copper-zinc-tin-sulfur technology, applied in the manufacture of circuits, electrical components, final products, etc., can solve the problems of highly volatile and toxic ammonia water, affecting the performance of the buffer layer, and being unfriendly to the environment

Inactive Publication Date: 2016-02-03
YUNNAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The methods for preparing the buffer layer of copper-zinc-tin-sulfur thin film solar cells reported in the literature are all prepared by chemical water bath deposition method. During the preparation of CdS thin film by water bath method, a large amount of waste water containing toxic element Cd will be generated, which is an environmentally unfriendly method. The cost is greatly increased in the process of wastewater treatment; in addition, the ammonia water used in the deposition process is highly volatile and toxic and harmful to human health; moreover, the volatilization of ammonia water will change the pH value of the solution and thus affect the performance of the buffer layer
Moreover, the thickness of the film cannot be controlled at any time during the reaction process of CdS prepared by the water bath method.

Method used

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  • Method for preparing CZTS thin film solar cell based on full vacuum method
  • Method for preparing CZTS thin film solar cell based on full vacuum method
  • Method for preparing CZTS thin film solar cell based on full vacuum method

Examples

Experimental program
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Effect test

Embodiment 1

[0025] (1) Substrate cleaning: The soda-lime glass is ultrasonically cleaned with acetone, alcohol, and deionized water in sequence, and dried with nitrogen for later use;

[0026] (2) Put the cleaned soda-lime glass into the magnetron sputtering system and heat it up to 150°C for 30 minutes, and use a molybdenum target with a size of 76.2mm*3mm as the target for DC sputtering, and the background vacuum is 5.0* 10 -4 pa, the substrate temperature is 160°C, the ignition pressure is 1.6pa, and the power is 150W. Sputter for 15 minutes when the argon gas is 1.6pa, then adjust the argon gas to 0.3pa and sputter for 105 minutes. Operate on soda-lime glass according to the above requirements Obtain a 1 μm molybdenum back electrode film on the surface, and then heat up to 220 and bake for 30 minutes;

[0027] (3) Preparation of copper-zinc-tin-sulfur thin film pre-layer: use ZnS, Sn and CuS with a size of 76.2mm*3mm as targets, perform radio frequency sputtering in the order of SLG / ...

Embodiment 2

[0032] (1) Substrate cleaning: The soda-lime glass is ultrasonically cleaned with acetone, alcohol, and deionized water in sequence, and dried with nitrogen for later use;

[0033] (2) Put the cleaned soda-lime glass into the magnetron sputtering system and heat it up to 150°C for 30 minutes, and use a molybdenum target with a size of 76.2mm*3mm as the target for DC sputtering, and the background vacuum is 5.0* 10 -4 pa, the substrate temperature is 160°C, the ignition pressure is 1.6pa, and the power is 150W. Sputter for 15 minutes when the argon gas is 1.6pa, then adjust the argon gas to 0.3pa and sputter for 105 minutes. Operate on soda-lime glass according to the above requirements Obtain a 1 μm molybdenum back electrode film on the surface, and then heat up to 220 and bake for 30 minutes;

[0034] (3) Preparation of copper-zinc-tin-sulfur thin film pre-layer: use ZnS, Sn and CuS with a size of 76.2mm*3mm as targets, perform radio frequency sputtering in the order of SLG / ...

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Abstract

The invention discloses a method for preparing a CZTS thin film solar cell based on a full vacuum method. The method comprises the following steps: 1) after magnetron sputtering, vulcanizing to prepare a CZTS thin film absorbing layer; 2) preparing 50-100nm CdS thin film buffer layer on the absorbing layer through radio frequency magnetron sputtering and then preparing 50-100nm intrinsic ZnO and 400nm Al:ZnO through radio frequency magnetron sputtering; and 3) finally preparing 2mu m Ni / Al electrode through evaporating. The traditional water bath method for preparation of the CdS film has the main defect that since waste water containing Cd (a toxic element) is generated in the preparation process of the CdS thin film, cost is largely increased in the process of waste water treatment, and ammonium hydroxide used in the process of sedimentation has volatility and toxicity and is harmful to human health, and in addition the volatility of ammonium hydroxide can change the pH value of a solution and further influences the property of the buffer layer. The sputtering method does not cause the pollution of waste water containing the Cd element, which occurs after the implementation of the water bath method; therefore, the sputtering method is friendly to the environment and is suitable for online preparation of thin film cells; in addition, the whole preparation process is carried out in vacuum and therefore the possibility of external impurity contamination to the thin film is very small.

Description

technical field [0001] The invention relates to a method for preparing copper-zinc-tin-sulfur thin-film solar cells by a full vacuum method, which is used for preparing thin-film solar cell materials and belongs to the technical field of photoelectric materials and new energy sources. Background technique [0002] Although copper indium gallium selenide (CIGS) and cadmium telluride (CdTe) solar cells are still the mainstream materials for the absorber layer of compound semiconductor thin film cells, the constituent elements indium and gallium in CIGS are scarce in nature and are rare elements. The price is expensive, and because Cd in CdTe is a heavy metal element, it will pose a serious threat to the environment. Therefore, based on I 2 -II-IV-VI 4 The quaternary compound semiconductor: Cu 2 ZnSnS 4 (CZTS), Cu 2 ZnSnSe 4 (CZTSe), and Cu 2 ZnSn(S 1-x Se x ) 4 , because its constituent elements are abundant in nature and non-toxic, it can meet TW-level production, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/363
CPCH01L21/02422H01L21/02557H01L21/02631H01L31/18Y02P70/50
Inventor 王书荣李志山蒋志杨敏刘涛郝瑞婷
Owner YUNNAN NORMAL UNIV
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