23 results about "Radio frequency sputtering" patented technology

The invention provides a low-temperature high-quality silicon nitride film preparation method based on conventional RF sputtering, and belongs to the technical field of film material preparation. The preparation method comprises the following steps: step 1, pretreating a substrate and then fixing the substrate on an objective table; step 2, fixing a target material in a cavity of a magnetron sputtering system, and then vacuumizing; 3, heating the substrate to enable the temperature of the substrate to be 30-100 DEG C; and 4, introducing nitrogen and argon into the cavity of the magnetron sputtering system, and setting the pressure intensity, the power and the deposition time to carry out radio frequency sputtering to prepare the silicon nitride film. Through cooperative adjustment of parameters such as gas proportion, power, bias voltage and air pressure, under the condition that the temperature of the substrate is lower than 100 DEG C, the density of the prepared silicon nitride thin film reaches 70% or above of that of a high-temperature process, and the problems that the thin film is loose in structure and large in internal stress at low temperature are effectively solved.

The application discloses a preparation method of a wide-bandgap perovskite photoactive layer, and comprises the following steps: S1, lead iodide powder, cesium iodide powder and ytterbium bromide powder are proportioned according to a proportioning molar ratio, and an inorganic target material is prepared by using a hot-press sintering process; S2, formamidinium hydriodide powder and methylammonium bromide powder are proportioned according to a proportioning molar ratio, and an organic target material is prepared by using a normal-temperature preparation process; S3, a pretreated substrate is placed on a magnetron sputtering sample table, the target materials prepared in steps S1 and S2 are respectively installed on corresponding radio frequency sputtering targets, and the background of a magnetron sputtering system is vacuumized; S4, high-purity argon gas is used as a sputtering gas, and a wide-bandgap perovskite thin film is prepared by using a magnetron co-sputtering method; the sputtering power of the inorganic target material prepared in step S1 is controlled, the sputtering power of the organic target material prepared in step S2 is controlled, and the thickness of the thin film is controlled, so that the high-quality thin film is prepared by using the differential target material preparation process.

The invention relates to a preparation method of a high-hardness ultra-smooth TiN coating, which comprises the following steps: putting a workpiece into a vacuum chamber, vacuumizing the vacuum chamber, and then introducing Ar to carry out ion cleaning on the surface of the workpiece; sequentially depositing a Cr layer and a Ti layer on the surface of the workpiece by adopting a radio frequency sputtering technology; a TiN layer is prepared on the surface of a workpiece by adopting a pure ion plating technology, when pure ion plating is carried out, mixed gas of Ar and N is introduced into a vacuum chamber, auxiliary ionization is carried out on the mixed gas in the vacuum chamber, negative bias voltage is applied to the workpiece, the ionization rate of a Ti target is improved by adopting a radio-frequency pulse power supply, and an ion beam is filtered by using a bent pipe magnetic filter. According to the TiN coating prepared through the method, the hardness can be stably higher than 3000 HV, the binding force on a high-speed steel base material is larger than 50 N, and the binding force with the base material is remarkably improved; the N content in the prepared TiN coating is larger than 45%, the ionization degree is very high, compactness is good, and the surface roughness Ra is smaller than 10 nm.

The invention relates to a preparation method of a high-transmittance linear gradual change optical filter. The preparation method comprises the following steps: S1, putting a cleaned substrate into a magnetron sputtering instrument; s2, preparing a first silicon dioxide thin film by using a radio frequency reactive sputtering method; s3, preparing a titanium dioxide film by using a radio frequency sputtering method; s4, repeating the steps S2 and S3 until the preparation of the bottom dielectric Bragg reflector in n periods is completed; s5, preparing a second silicon dioxide film by using a radio frequency reactive sputtering method; s6, preparing a wedge-shaped cavity layer; and S7, repeating the steps S2 and S3 until the preparation of the top dielectric Bragg reflector in m periods is completed. According to the method, the substrate does not need to be heated, the linear gradual change optical filter can be directly prepared on the flexible substrate or photoelectric detectors such as a CCD (Charge Coupled Device) and a CMOS (Complementary Metal-Oxide-Semiconductor Transistor), and the process is simple.

The invention provides a tellurium-doped aluminum nitride film and a preparation method and application thereof, and belongs to semiconductor materials. The tellurium-doped aluminum nitride thin film is of a sandwich structure formed by sequentially stacking a first aluminum nitride layer, a tellurium-doped aluminum nitride layer and a second aluminum nitride layer. According to the preparation method, a radio frequency sputtering aluminum nitride target material and a direct current sputtering tellurium target material are adopted for co-sputtering to achieve aluminum nitride film doping, the first non-doped aluminum nitride layer and the second non-doped aluminum nitride layer are introduced to form a sandwich structure with the tellurium-doped aluminum nitride layer, efficient doping of aluminum nitride is achieved, and the doping efficiency is improved. And the X-ray detection sensitivity and the environmental stability are improved.

The invention discloses a high-performance N-type skutterudite thermoelectric material barrier layer with a composite structure and a preparation method thereof, and belongs to the technical field of thermoelectric conversion. The preparation method comprises the following steps that a Mo target is installed at a radio frequency target position, a W target is installed at a direct current target position, a skutterudite wafer substrate is fixed to a substrate, and the substrate is heated and vacuumized; and the argon flow is set and introduced, bias voltage is started, radio frequency and direct current power supplies are synchronously started to pre-sputter the target material, then radio frequency sputtering of the Mo connecting layer and direct current sputtering of the W barrier layer are sequentially carried out, and the W-Mo composite barrier layer is prepared. The method is used for solving the technical problems that due to the limitation of the high melting point of refractory metal W, a compact tungsten barrier layer is difficult to prepare through a common sintering process, the diffusion capacity of barrier elements is reduced, mismatch of thermal expansion coefficients of the metal W and a skutterudite matrix is large, and the barrier layer is prone to failure in a thermal cycle service environment.

A method for manufacturing low-emissivity easy-clean glass and the resulting low-emissivity easy-clean glass and low-emissivity easy-clean composite glass. The method involves using RF (Radio Frequency) sputtering of a silicon oxide target while simultaneously introducing nitrogen gas, and simultaneously using DC (Direct Current) sputtering of a silver target to co-deposit nitrogen-doped silicon oxide silver (Si, O, N: Ag) on a clear glass substrate. This low-emissivity easy-clean glass can avoid oxidation issues, improve conductivity, hardness, water contact angle, and reduce hemispherical emissivity.

The application provides a double-rare earth doped photoelectric storage film and a preparation method and application thereof, and the method comprises the following steps: (1) pressing Eu2O3 and Tb4O7 into sheet structures respectively, obtaining Eu2O3 target material and Tb4O7 target material after high-temperature calcination; and placing the Eu2O3 target material and the Tb4O7 target material on a KNN target material to simultaneously perform radio frequency sputtering, and obtaining a photoelectric storage film. The photoelectric storage film of the double-rare earth doped potassium sodium niobate prepared by the application has high transparency, full-waveband fluorescent reading, good stability and bending resistance, and can realize coupling between photochromism and dielectric energy storage in the film material, thereby providing a new opportunity for the application requirement of constructing a future flexible foldable photoelectric storage device.

A device comprises a vacuum chamber configured to create a substantially atmospheric vacuum environment for plasma processing; a radio frequency (RF) power supply located outside the vacuum chamber; an RF matching network operationally coupled to the RF power supply; and a plurality of electrodes mounted inside the vacuum chamber, the plurality of electrodes configured to receive RF power signals from the RF power supply through the RF matching network. The RF power signals are delivered simultaneously to the plurality of electrodes during a sputtering operation. The plurality of electrodes and a set of electrical components are operable to control the inductive and capacitive reactance for coupling the RF power signals to provide more desirable plasma coupling during the sputtering process.

The application provides a Ge-Se-Te chalcogenide phase change film and a preparation method thereof, and comprises the following steps: S1, taking a substrate and cleaning, drying and storing, and selecting high-purity Ge, Se and Te as sputtering target materials for standby; S2, starting the vacuum system of the magnetron sputtering film coating system, and performing vacuum treatment on the chamber; S3, adjusting the sputtering angle of the sputtering target material to 120-145°, installing the Te target material on the magnetron direct current sputtering target, and installing the Ge target material and the Se target material on the magnetron radio frequency sputtering target for sputtering; after the vacuum degree reaches the sputtering standard, continuously introducing argon into the sputtering chamber until the gas pressure in the sputtering chamber reaches the required gas pressure for starting, then reducing the argon flux, starting sputtering, keeping the power of the Te target material, the Ge target and the Se target unchanged during the sputtering process, and after the sputtering is completed, the deposition state Ge-Se-Te chalcogenide phase change film is obtained. The application solves the problem that the conventional chalcogenide thin film material cannot simultaneously have large optical contrast and low loss.

A method for forming a coating on a substrate formed from zinc sulfide (ZnS) is provided. A ZnS film is grown on the substrate with a radio frequency sputtering process and metal dopants are sputtered on the substrate with a high-power impulse magnetron sputtering process. The metal dopants can be molybdenum or tungsten and simultaneously sputtered while growing the ZnS film. The sputtering ionizes the coating where the coating has a sheet resistance that is less than 50 ohm / square and the metal dopants form n-type dopants in the ZnS film. The metal dopants can be formed at a concentration that varies with a thickness of the ZnS film. At a first thickness, the concentration is at a first concentration and at a second thickness greater than the first thickness, the concentration is at a second concentration less than the first concentration.

The invention provides a preparation method of an AlScN thin film compatible with a CMOS (Complementary Metal Oxide Semiconductor) process and application of a memristor of the AlScN thin film. The preparation method of the AlScN thin film compatible with the CMOS process comprises the following steps: growing a W bottom electrode layer on a Si substrate; growing an Al0. 8Sc0. 2N thin film on the W bottom electrode layer by taking a scandium target and an aluminum target as sputtering target materials and utilizing a direct current sputtering method and a high-energy radio frequency sputtering method; and growing a W top electrode layer on the Al < 0.8 > Sc < 0.2 > N thin film. The high-quality ferroelectric Al0. 8Sc0. 2N thin film is successfully grown on the CMOS process standard W metal electrode for the first time, and compared with a traditional ferroelectric memristor, the ferroelectric memristor has more excellent performance and multi-stage storage capacity, the excellent electrical performance of the ferroelectric memristor has very high similarity with cranial nerve-like synapses, the performance is good, the key bottleneck of integration of ferroelectric materials and CMOS is solved, and the ferroelectric memristor is suitable for being applied to the field of CMOS devices. The method has great research value and application prospect in high-speed and low-power-consumption neuromorphic calculation.

The invention relates to the technical field of memristors, and provides a preparation method of a flexible wide-spectrum photoelectric memristor based on zinc aluminum oxide and application of the flexible wide-spectrum photoelectric memristor in a neuromorphic visual system. The preparation method comprises the following steps: cleaning a flexible substrate with indium tin oxide to serve as a bottom electrode; forming a lower oxygen-enriched functional layer by using a zinc-aluminum oxide target through radio frequency sputtering under the atmosphere of argon-oxygen ratio of 1: 1; sputtering under the same condition in a pure argon atmosphere to form an upper oxygen-poor functional layer; and depositing a silver electrode as a top electrode through a mask plate and a thermal evaporation method. The device can realize continuous, stable and wide-range regulation and control of the conductivity state under the action of different light pulses and voltage pulses. The neuromorphic visual system constructed based on the flexible photoelectric memristor has human brain-like image sensing and processing capabilities, has high sensitivity, low energy consumption and good flexibility, and can be applied to the fields of wearable intelligent equipment and image processing.

The invention provides a preparation method and application of a large-size ultrathin single crystal Bi2O2Se thin film, and belongs to the technical field of Bi2O2Se thin film preparation. According to the method, firstly, oxygen plasma is adopted to carry out hydrophilic treatment on a substrate, so that the affinity of the substrate to oxygen is stronger, and then when a Bi2O3 film is grown on the surface of the substrate by utilizing radio frequency sputtering, a large-area film with consistent orientation is more likely to grow on the surface of the substrate; the prepared Bi2O3 film is in a hexagonal phase, close packing is easily formed, and the Bi2O3 film is more easily grown into a compact and uniform film with controllable thickness; the preparation method comprises the following steps: firstly, preparing a Bi2O2Se thin film, then carrying out low-pressure uniform selenylation by using a flat and uniform Bi2O3 thin film as a pre-template to form a large number of uniform Bi2O2Se nucleation sites, and finally preparing the Bi2O2Se thin film of more than 2 inches under the assistance of the nucleation sites.

The invention discloses a preparation method of an ultra-low Pt loaded N-MoC hydrogen evolution film and the ultra-low Pt loaded N-MoC hydrogen evolution film. The preparation method is used for preparing the ultra-low Pt loaded N-MoC hydrogen evolution film through three steps. The ultra-low Pt load is realized on the surface of the MoCx film in a radio frequency sputtering mode. Meanwhile, adsorption oxygen and weak adsorption C and MoC particles on the surface of the MoCx thin film are removed through N plasma treatment, the adhesive force of Pt on the MoCx thin film is enhanced, the number of defects in the MoCx thin film is increased through gaps and replacement doping of N in the MoCx thin film, the atomic scale dispersion of Pt is achieved through the strong electron metal-support interaction between Pt clusters and an N-MoC substrate, meanwhile, the center positions of d bands of Pt and Mo are optimized, and the performance of the MoCx thin film is improved. Therefore, the optimal hydrogen adsorption energy is realized, and the hydrogen evolution performance of the MoCx film is favorably improved.

The invention discloses a ZnSnN2 homojunction and a preparation method thereof, and the method comprises the steps: depositing a zinc-tin alloy target in which the ratio of Zn to Sn is 3: 1 on a substrate through a radio frequency sputtering method in a flowing nitrogen and argon atmosphere at 50 DEG C to obtain a ZnSnN2 film. And in the flowing nitrogen and argon atmosphere, Ag doping is carried out on the ZnSnN2 thin film in the room temperature environment, and the ZnSnN2: Ag thin film is obtained. And depositing a Pt target on the ZnSnN2: Ag film through a direct current sputtering method in a flowing argon atmosphere to obtain the ZnSnN2 homojunction. The problem that the ZnSnN2 homojunction prepared by the existing method is poor in rectification characteristic and has no photovoltaic effect is solved.

The application discloses a method for doping metal atoms in gallium oxide material, which comprises the following steps: step 1, selecting C-sapphire as a substrate material; step 2, preparing a beta-Ga2O3 thin film material on the substrate material by adopting radio frequency magnetron sputtering; step 3, placing the sample after magnetron sputtering into a horizontal tube type high-temperature diffusion furnace to perform post annealing treatment; step 4, detecting the thin film structure and the crystal surface roughness of the sample after annealing by adopting XRD and AFM testing instruments; step 5, doping: preparing a composite structure of 'Ga2O3 / metal / ... / metal / Ga2O3' on the same substrate by alternately adopting radio frequency sputtering Ga2O3 and direct current sputtering metal thin film to perform magnetron sputtering; and step 6, performing annealing treatment on the obtained composite structure sample by adopting a diffusion furnace after the doping is completed; and the technical problem that the existing technology is difficult to improve the p-type Ga2O3 conductive capacity is solved.

In order to form, on the surface of an LN single crystal, an LT single crystal, or the like, an epitaxial thin film that does not have rotating twin crystals and that exhibits characteristics comparable to those of an ideal perfect crystal, this epitaxial thin film obtained by adding, to lithium niobate or lithium tantalate serving as a base material, at least one alkali metal element of sodium, potassium, rubidium, cesium, or francium is epitaxially grown on the surface of a substrate by a high-frequency sputtering method.

The invention provides a method for forming an MTJ (Magnetic Tunnel Junction) barrier layer thin film, which comprises the following steps of: executing a chamber environment treatment step before depositing the barrier layer thin film: bombarding a first target material in a radio frequency sputtering manner to form an oxygen adsorption layer on the inner wall of the periphery of a chamber; performing oxygen treatment on the chamber, providing oxygen atoms, and combining the oxygen adsorption layer with the oxygen atoms; and a barrier layer thin film deposition step is executed, specifically, a second target material is bombarded in a radio frequency sputtering mode, and metal atoms bombarded from the second target material attract oxygen atoms combined with the oxygen adsorption layer in the deposition process and supplement the oxygen atoms to the formed MTJ barrier layer thin film. According to the invention, the crystal structure and the quality of the MTJ barrier layer thin film can be optimized.

The invention provides a binder-free carbon-coated silicon germanium alloy / carbon nanotube composite carbon fiber negative electrode material and a preparation method and application thereof, and the preparation method comprises the following steps: (1) carrying out chemical vapor deposition on carbon fibers with hydroxide nanowires grown on the surfaces to obtain carbon fibers with nitrogen-doped carbon nanotubes (NCNT) grown on the surfaces; (2) sputtering silicon-germanium alloy on the carbon fiber with the nitrogen-doped carbon nanotube growing on the surface by adopting magnetron co-sputtering, and then continuously sputtering graphite to obtain a negative electrode material; wherein the silicon adopts radio frequency sputtering, and the germanium adopts direct current sputtering. According to the negative electrode material prepared by the scheme, uniform compounding of SiGe and NCNT and effective coating of the graphite layer are realized, and the negative electrode material has high specific capacity, excellent conductivity and structural stability. As a lithium ion battery negative electrode material, the composite material shows excellent electrochemical performance in high-rate charge-discharge and long circulation, is free of binders, and is suitable for complex application scenes such as flexible performance equipment and the like.

The invention relates to a manufacturing method of low-radiation easy-to-clean glass, the low-radiation easy-to-clean glass and low-radiation easy-to-clean multi-layer glass. The manufacturing method of the low-radiation easy-to-clean glass comprises the following steps of: sputtering a silicon oxide target material by utilizing radio frequency, simultaneously introducing gas nitrogen, and sputtering a silver target material by utilizing direct current to deposit nitrogen-doped silicon silver oxide on a clear glass base layer in a mixed plating manner. Therefore, according to the low-radiation easy-to-clean glass, the oxidation problem can be avoided, meanwhile, the electric conductivity, the hardness and the water drop angle are improved, and the hemispherical radiance is reduced.

This invention provides an Sb7Te / Te-doped Bi 0.5 Sb 1.5 This invention relates to the field of thermoelectric thin film technology and its preparation method. The invention utilizes radio frequency sputtering to achieve Sb7Te / Te-doped Bi on a polyimide substrate. 0.5 Sb 1.5 This invention relates to the preparation of Te3 thermoelectric thin films. By adjusting the substrate temperature and sputtering power during the magnetron sputtering process, thin films with high crystallinity and effective doping of the second phase (Te and Sb7Te) are obtained. Significant interface scattering effects and a substantial increase in conductivity are observed, resulting in bismuth telluride-based thin films with excellent thermoelectric properties. This invention uses flexible polyimide as a substrate to prepare Sb7Te / Te-doped Bi... 0.5 Sb 1.5 Te3 thermoelectric films have good flexibility, making them better suited for wearable devices.

The invention relates to a sputtering device and a thin film deposition method.The sputtering device comprises a carrier plate, a cylindrical rotatable cathode target and an anode structure, and the carrier plate is used for placing a substrate to be deposited; the cylindrical rotatable cathode target material is arranged above the carrier plate; the anode structure comprises a plurality of adjusting units, the adjusting units are sequentially arranged in the axial direction of the cylindrical rotatable cathode target material, and the adjusting units surround the periphery of the cylindrical rotatable cathode target material along the circumferential part of the cylindrical rotatable cathode target material and are provided with openings facing the carrier plate; and the distance between the adjusting unit and the cylindrical rotatable cathode target material is independently adjustable. According to the sputtering device and the thin film deposition method, the film thickness uniformity and the thin film adhesive force are remarkably improved, accurate adjustment of the film thickness of different areas is achieved, meanwhile, the target material utilization rate and the radio frequency sputtering efficiency are improved, and therefore the thin film deposition quality is improved, and the overall efficiency of thin film deposition is improved.