197 results about "Radio frequency sputtering" patented technology

A method for preparing a high entropy alloy thin film coating includes preparing a melt alloy by arc melting raw materials including five or more elements, casting the melt alloy into a mold to form a target, placing the target inside a vacuum chamber of a magnetron sputtering system, and rotatably fixing a substrate inside the vacuum chamber, spaced apart from the target. A high entropy alloy thin film is deposited on the substrate by high vacuum radio frequency sputtering inside the vacuum chamber.

The invention relates to a method for preparing the transparent and conductive indium tin oxide thin film through sputtering flexible substrates at room temperature, which belongs to the technology field of electronic material; the method comprises the following steps: cleaning, charging working gas, ultraviolet irradiating, preparing a barrier layer and sputtering an indium tin oxide film; through the on-line ultraviolet irradiation, the argon oxygen ratio is (6.0 to 7.5):0.2, by adopting radio frequency sputtering or direct current sputtering, and at the room temperature, the indium tin oxide thin film can be prepared on the organic flexible substrate coated with a silicon dioxide layer in advance and taken as the diffusion barrier layer efficiently without damage. When the thickness of the indium tin oxide thin film is 700 nm, the electrical resistivity is 3.5*10-4 omega cm, the square resistance is 5 omega, the transmissibility of the visible light is 88 percent, and the film layer is even and smooth, and cannot be crimpled nor fall off. Compared with the preparation process of the traditional flexible indium tin oxide thin film, the method has the advantages that heating is not required, the process control is simple, and no damage is caused to the basal body; the method is suitable for large-area production and has good photoelectric characteristics.

The invention discloses a solar intermediate-temperate high-temperature selective absorbing coating. The coating sequentially comprises an infrared high-reflection layer, a first absorbing layer, a second absorbing layer and an antireflection layer on the surface of a substrate from bottom to top, the first absorbing layer and the second absorbing layer are composed of gradient compositions of boron-containing compounds prepared by physical vapor deposition, and the boron-containing compounds are metal boride, metal nitrogen boride, metal oxygen boride or metal nitrogen oxygen boride. The coating is high in absorption rate and low in emissivity, has good intermediate-temperate and high-temperature inoxidizability and can be used at the high temperature in a non-vacuum condition for a long time. During preparation, radio frequency sputtering is avoided, the substrate is not heated, large-scale industrial production can be realized extremely easily, and the solar intermediate-temperate high-temperature selective absorbing coating has the advantages of energy conservation, easiness in control, low preparation cost, quick film formation and the like.

Disclosed is an ISFET comprising a H+-sensing membrane consisting of RF-sputtering a-WO3. The a-WO3/SiO2-gate ISFET of the present invention is very sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.

A display substrate is disclosed comprising: a supporting substrate; an organic resin layer formed on the supporting substrate; and a transparent electrode formed on the organic resin layer, wherein the transparent electrode includes: a first layer containing a zinc oxide and formed in close contact with the organic resin layer; and a second layer containing a zinc oxide and which has a thickness thicker than a thickness of the first layer and is formed on the first layer, wherein the first layer is deposited by either one of a DC sputtering and a DC magnetron sputtering, and the second layer is deposited by any one of a radio frequency sputtering, a radio frequency magnetron sputtering, a radio frequency superimposing a DC sputtering, and a radio frequency superimposing a DC magnetron sputtering, and the display substrate is available, for example, as the substrate having a transparent electrode for counter electrode of liquid crystal display device.

The invention discloses a composite solid electrolyte material, a preparation method thereof, and an all-solid-state lithium ion secondary battery containing the electrolyte material. The composite solid electrolyte material comprises a core and a surface coating which covers the surface of the core, the core is inorganic chalcogenide glass ceramic state electrolyte, and the surface coating is a lithium compound which does not react with air and moisture in air. The preparation method of the composite solid electrolyte material is as follows: firstly the inorganic chalcogenide glass ceramic state electrolyte core is prepared, and then a radio frequency sputtering method or pulse laser deposition is used for coating the lithium compound which does not react with air and moisture in air on the surface of the inorganic chalcogenide glass ceramic state electrolyte. The composite solid electrolyte material has high stability in air, and can be assembled into all-solid-state batteries in the environment of common battery plant, in order to overcome the problem that prior chalcogenide electrolyte must be assembled and operated in an anhydrous condition.

The invention discloses a conductive Nb2O5-x target material for magnetron sputtering coating. The conductive Nb2O5-x target material comprises the following raw material powder in percentage by weight: 80 to 99 percent of ZnO, 0.1 to 10 percent of In2O3 and 0.1 to 10 percent of Ga2O3, wherein the average particle size of the powder is between 0.05 to 50 microns; and the purify of the raw material powder is more than or equal to 4N. The invention also discloses a method for producing the conductive Nb2O5-x target material. A material obtained by the method is an Nb2O5-x target material which has high conductive performance, so that niobium oxide series optical films can be produced by magnetron sputtering, film uniformity during production of the large-area niobium oxide series optical films can be ensured, the production process is easier to control and the production efficiency is improved by 30 to 50 percent compared with that of a conventional alternating current radio-frequency sputtering or vacuum evaporation coating process which takes conventional defective conductor Nb2O5 as a target source.

The invention discloses a Zn-Sb-Te phase change storage thin-film material for a phase change memory and a preparation method of the Zn-Sb-Te phase change storage thin-film material. The Zn-Sb-Te phase change storage thin-film material is characterized in that the material is made of three elements of Zn, Sb and Te, and the chemical structural formula of the material is ZnX (Sb2Te3)(100-X), wherein 0<x<40. The preparation process comprises the steps as follows: a zinc elemental target is mounted into a magnetic control direct current sputtering target, and an Sb2Te3 target is mounted into a magnetic control radio-frequency sputtering target; a sputtering chamber is subjected to vacuum pumping treatment until the vacuum degree inside the chamber reaches 1.6*10<-4> Pa, and then high-purity argon is fed into the sputtering chamber until the air pressure reaches 0.3 Pa; and the sputtering power of the zinc target is controlled to be 0-10 W, the sputtering power of the Sb2Te3 target is controlled to be 60-100 W, and a coating is sputtered for 200 seconds at a room temperature. The Zn-Sb-Te phase change storage thin-film material has the advantages of high crystallization speed, high crystallization temperature, lower melting point, higher crystalline state resistivity, better data retentivity and capability of stably working at high temperatures.

The invention discloses a manufacturing method of a controllable heating and defrosting capacitive type high-altitude humidity sensor, relates to the field of high-altitude humidity sensors and the manufacturing method thereof, and solves the problem that the humidity data acquisition operation is seriously influenced as the surface of the conventional humidity sensor is frosted due to excessively low temperature in a high-altitude environment. The high-altitude humidity sensor is characterized by comprising a base, a first insulation layer, a first temperature sensor bonding pad, a second temperature sensor bonding pad, a first heater bonding pad, a second heater bonding pad, a temperature sensor electrode, a heater electrode, a second insulation layer, a lower electrode, a humidity sensing layer, an upper porous electrode and a groove. The manufacturing method comprises the steps as follows: manufacturing the high-altitude humidity sensor by adopting the methods of photo-etching stripping, magnetic control radio-frequency sputtering, corrosion hollowing, spin coating and evaporation coating. The high-altitude humidity sensor is suitable for the fields of climate and weather.

The invention discloses a preparation method for ultrathin up-right graphene field emission cathode rich in wrinkle on surface and belongs to the preparation and application field of the nanometer material. The preparation method mainly comprises the following preparation technology: taking the monocrystalline silicon piece or metal piece with flat surface or carbon nanotube array or silicon nanowire array having nano structure on surface as the substrate; adopting the radio frequency sputtering for growing the ultrathin up-right graphene rich in wrinkle on surface without catalytic on the substrate; and taking the obtained ultrathin up-right graphene rich in wrinkle on surface as the cathode for assembling the field electronic emitter. The up-right graphene is very thin, the average layer number is five, much wrinkle is formed on the surface with defect, the surface of up-right graphene is flat and the up-right grapheme has lower opening field, threshold value field, good field emission stability and higher application value.

Characters of the method are that n-SnO2-x thin membrane layer is prepared on Si(100) chip by using radio frequency sputtering technique; then, Pd-Ni layer is prepared on tin dioxide layer so as to form gas sensor in composite membrane of Pd-Ni/SnO2. Under environment of normal temperature, the gas sensor raises selectivity and sensibility for hydrogen. Features are: simple technique and low cost.

The present invention discloses a copper oxide doped tin dioxide base ammonia gas sensitive sensor manufacturing method. The method comprises the following steps: sequentially placing a Cu target material with a purity of 99.99% and a Sn target material with a purity of 99.99% on two radio frequency sputtering targets, and placing a Al2O3 ceramic tube on a sample holder; carrying out vacuum pumping on the system before sputtering until air pressure of the system achieves 10<-3>-10<-5> Pa; opening gas path valves of oxygen gas and argon gas, wherein the air pressure is maintained to 6*10<0>-3*10<-1> Pa; carrying out pre-sputtering for 10 min, then removing a blocking disc, concurrently adjusting a power of the Sn target to 60-80 W, adjusting a power of the Cu target to 20-60 W, and sputtering for 45 min; opening the vacuum chamber to take the sample when the air pressure is 10<5> Pa; and carrying out annealing for 1-3 h at a temperature of 300-500 DEG C in a muffle furnace to obtain the finished product. The manufactured gas sensitive element provides good selectivity for ammonia gas, can quickly and effectively detect ammonia gas from a lot of mixing gas, and has characteristics of high sensitivity and short response recovery time.

The invention discloses an environment-friendly Zn-Sb phase change storage thin-film material and a manufacturing method of the environment-friendly Zn-Sb phase change storage thin-film material. The environment-friendly Zn-Sb phase change storage thin-film material is characterized in that the chemical structural formula of the material is ZnxSb(100-x), and x is larger than 0 but smaller than 60. The manufacturing method comprises the steps of installing an elemental Sb or Zn target material in a magnetic control direct current sputtering target, installing a ZnSb alloy target material in a magnetic control radio frequency sputtering target, vacuumizing a sputtering chamber until the vacuum degree is 2.0*10<-4>Pa, feeding high-purity argon of 50ml/min into the sputtering chamber until the air pressure reaches 0.35Pa, controlling the sputtering power of the ZnSb alloy target material to be 20-50W, controlling the sputtering power of the elemental Sb or Zn target material to be 0-40W, and obtaining the finished environment-friendly Zn-Sb phase change storage thin-film material after the target materials sputter for 5 minutes at the room temperature. The environment-friendly Zn-Sb phase change storage thin-film material and the manufacturing method of the environment-friendly Zn-Sb phase change storage thin-film material have the advantages that the crystallization temperature is high, the phase change speed is high, the switch ratio is large, data retentivity is good, stability is high, and power consumption is small.

The invention relates to preparation technology of a metal film, and discloses a new simple and convenient preparation method of a copper film. The invention effectively controls the magnitude of residual stress generated in the preparation process, thereby implementing preparation of the low-residual-stress copper film material. The method is applied to a magnetron sputtering coating device, and adopts radio-frequency magnetron sputtering to prepare the copper film. The magnetron sputtering coating device is provided with a magnetron sputtering chamber, and a magnetron sputtering target is arranged in the magnetron sputtering chamber. The method comprises the following steps: a. pretreating a substrate; b. putting the pretreated substrate in the magnetron sputtering chamber; c. vacuumizing the magnetron sputtering chamber; d. introducing high-purity argon into the magnetron sputtering chamber; e. regulating the radio-frequency sputtering power and gas pressure, and sputtering the magnetron sputtering target to form the copper film on the substrate; and f. after cooling the magnetron sputtering chamber, taking out the copper film sample, and carrying out residual stress testing.

The invention relates to a resistance random access memory based on a vanadium oxide/zinc oxide laminated structure, wherein the resistance random access memory is composed of a lower electrode, a resistance random layer and an upper electrode; the resistance random layer is the laminated structure composed of a vanadium oxide medium layer and a zinc oxide medium layer; and films of the vanadium oxide medium layer and the zinc oxide medium layer are prepared by adopting a direct-current sputtering or radio-frequency sputtering method. The resistance random access memory based on the vanadium oxide/zinc oxide laminated structure disclosed by the invention has the advantages that: the resistance random access memory is in the form of the vanadium oxide/zinc oxide laminated structure and has the advantage of controlling double polarity and single polarity of zinc oxide; consistency and repeatability of a device are increased; compared with the single-layer vanadium oxide, reset current is decreased to be below 10 mA; in the bipolar testing process, a progressive reset process exists; different high-impedance resistance can be obtained through reset voltage of different amplitude; at least three resistance values can be obtained; more than ten times of resistance value ratio between every two resistance values exists; therefore, the resistance random access memory based on the vanadium oxide/zinc oxide laminated structure can be applied to multi-value storage.

The invention discloses a manufacturing method of a back-channel-etching oxide thin-film transistor. The method sequentially comprises the following steps: (a) manufacturing a first thin-film layer on a substrate by a direct-current sputtering method and carrying out patterning; (b) manufacturing a second thin-film layer by the direct-current sputtering method and carrying out patterning; (c) manufacturing a third thin-film layer by the direct-current sputtering method and carrying out patterning as a source-drain electrode; and (d) putting the whole semi-finished product into electrochemical oxidation equipment for electrochemical oxidation, completely oxidizing a second patterned thin-film layer to form a second oxide layer, partially oxidizing a first patterned thin-film layer, and forming an oxide layer corresponding to a first thin-film layer material on the upper surface of the first patterned thin-film layer as a first oxide layer, wherein the unoxidized part of the first thin-film layer is taken as the residual first thin-film layer; the second oxide layer is taken as an active layer; the first oxide layer is taken as a gate insulation layer; and the residual first thin-film layer is taken as a gate. According to the manufacturing method, manufacturing is carried out at room temperature; radio-frequency sputtering is not needed; the manufacturing technique is simple; the production efficiency is high; and defects are few.

The invention relates to a method for growing La1-xCaxMnO3 single crystal thin film by a simple device, wherein the thin film is prepared by adopting the magnetic control radio-frequency sputtering method, rare-earth manganese oxide polycrystalline ceramic target which is prepared by the solid state reaction method is adopted as the target material, single crystal substrate which is matched with the rare-earth manganese oxide is adopted as the basement, the requirement of the back side vacuum degree of the sputtering device is higher than 2.0*10<-5>Pa, the temperature of the basement is between 700 DGE C and 900 DGE C, the sputtering power is between 150W and 200W, the sputtered thin film needs to be annealed under 900-1000 DEG C for 24 hours, the rare-earth manganese oxide single crystal thin film and the buffer layer of the substrate which are prepared by the preparing method are not obvious, the components of the thin film are accorded with that of the target material, the method has low cost and is convenient to grow in large area.

The invention discloses a method and a device for in-place preparing an adjustable soft magnetic film with high-frequency property. The method adopts a radio frequency magnetron sputtering method of the prior art; a small quantity of nonmagnetic metal material is also sputtered on a substrate when magnetic metal material is sputtered. The atom percentage of nonmagnetic metal and magnetic metal sputtered on the substrate is between 3 and 20. The device is the same with the prior radio frequency sputtering device except for a sputtering target; the sputtering target material is a composite target.

The invention discloses a method for preparing antibacterial silver-plating leather. The method is characterized in that the adopted sputtering method is magnetron sputtering and/or radio-frequency sputtering method and comprises the following steps of: removing spots on the surface of a leather material; and then putting the leather material as a substrate into a sputtering room, taking metal silver or silver alloy material as a sputtering target material, carrying out sputtering coating by adjusting technique parameters such as the temperature of the substrate and the temperature of the silver target material in the sputtering technique, and obtaining the antibacterial silver-plating leather. The method for preparing antibacterial silver-plating leather has no pollution, does not changethe performance of the raw leather materials and has high antibacterial efficiency.

The invention relates to a tin-doped indium oxide (ITO)/gallium oxide (Ga2O3) double-layer structure deep-ultraviolet transparent conductive film and a preparation method thereof, and belongs to the technical field of electronic materials. The preparation method comprises the following steps: ultraviolet optical quartz glass is used as the substrate, and radio-frequency magnetron sputtering is carried out on the Ga2O3 ceramic target to prepare a Ga2O3 layer the thickness of which is 30-60 nm; and direct-current magnetron sputtering is carried out on an ITO target to prepare an ITO layer the thickness of which is 15-29 nm. The pressure intensity of argon gas for sputtering is 0.2-2 Pa, the power for radio-frequency sputtering is 50-100 W, the substrate temperature is 200-300 DEG C, the current for direct-current sputtering is 80-150 mA, and the voltage for direct-current sputtering is 200-400 V. The prepared film has the advantages of low resistivity, high transmittivity within the range of visible light, ultraviolet light and deep-ultraviolet light, and other favorable photoelectric properties. The film otained by the method of the invention has wide application prospects in the fields of ultraviolet photoelectric devices and the like.

The invention relates to the field of semiconductor materials, in particular to a method for preparing a metal film doped with ZnO. The method is characterized by comprising the following steps: a substrate is arranged in a magnetron sputtering room after being cleaned and a reaction room thereof is pumped to vacuum with high cleanliness; high-purity metal strips are taken as adulterants and high-purity Zn are taken as materials, and metal strips are fixed on a Zn target according to a plurality of proportions; pure Ar gas and pure oxygen are taken as sputtering gas and reaction gas to be input into the vacuum reaction sputtering room by the control of a flowmeter for sputtering growth; and annealing treatment is carried out in vacuum environment after growth. The invention has the following beneficial effects: the control of metal doping content is realized, and the effect of oxidation on the metal target during the reaction sputtering is effectively reduced by the pattern of radio frequency sputtering during the reaction, thus leading the sputtering to keep continuous and stable; and finally, by being combined with the corresponding vacuum annealing technology, the optical and electrical properties of the MZO film are optimized. The preparation method simplifies technical processes, reduces the whole development procedure, shortens the period and saves the cost.

The invention discloses a preparation method for an inorganic / organic multilayer composite separator. The method comprises: soaking a separator in an organic solvent, cleaning surface of the separator by using ultrasonic vibration for 15 ~ 30min, drying in an oven, and then cutting the separator into a square separator; placing the above square separator and a target material into a RF (radio frequency) sputtering device; adjusting the air pressure of the RF sputtering device to be 0.1 ~ 1.0Pa, and then feeding in reactant gas, the sputtering power being 5 ~ 80W and the sputtering time being 5 ~ 100min; running the device, so target material plasma bombards gas molecules to form inorganic matter / organic matter which deposit on both sides of the separator to obtain an inorganic / organic multilayer composite separator. By uniformly sputtering one layer or a plurality of layers of inorganic matter / organic matter on the porous separator surface, the dimensional stability of ordinary separators is effectively improved, and the heat resistance of the separator is improved.

A preparation method of a CuxVyOz coating for a positive electrode of a lithium ion battery comprises the following steps of placing a CuO-acetylene black target material and a V2O5 target material in two radio frequency target positions; fixing a single light aluminum foil on a film coating sample table; vacuumizing a film coating chamber and a sample chamber of a magnetron sputtering device; introducing Ar gas into the film coating chamber; setting a heating temperature of the aluminum foil to be 350-600 DEG C and the radio frequency sputtering power to be 50-400W; and starting to carry film coating on the aluminum foil, so that the mole ratio of Cu atom to V atom which are sputtered is 1:1, and the sputtering time is 10-100 minutes. A CuxVyOz thin film is synthesized on the aluminum foil at one step by radio frequency magnetron sputtering, and the prepared sample can be directly applied to the positive electrode of the lithium ion battery after stamped and cut. The method is high in reaction efficiency and high in film formation, the prepared coating is uniform in constituents, high in adhesive force and high in durability and stability, and the performance of the lithium battery is favorably enhanced and improved.