3 results about "Radio frequency sputtering" patented technology

The application discloses a preparation method of a wide-bandgap perovskite photoactive layer, and comprises the following steps: S1, lead iodide powder, cesium iodide powder and ytterbium bromide powder are proportioned according to a proportioning molar ratio, and an inorganic target material is prepared by using a hot-press sintering process; S2, formamidinium hydriodide powder and methylammonium bromide powder are proportioned according to a proportioning molar ratio, and an organic target material is prepared by using a normal-temperature preparation process; S3, a pretreated substrate is placed on a magnetron sputtering sample table, the target materials prepared in steps S1 and S2 are respectively installed on corresponding radio frequency sputtering targets, and the background of a magnetron sputtering system is vacuumized; S4, high-purity argon gas is used as a sputtering gas, and a wide-bandgap perovskite thin film is prepared by using a magnetron co-sputtering method; the sputtering power of the inorganic target material prepared in step S1 is controlled, the sputtering power of the organic target material prepared in step S2 is controlled, and the thickness of the thin film is controlled, so that the high-quality thin film is prepared by using the differential target material preparation process.

The application provides a double-rare earth doped photoelectric storage film and a preparation method and application thereof, and the method comprises the following steps: (1) pressing Eu2O3 and Tb4O7 into sheet structures respectively, obtaining Eu2O3 target material and Tb4O7 target material after high-temperature calcination; and placing the Eu2O3 target material and the Tb4O7 target material on a KNN target material to simultaneously perform radio frequency sputtering, and obtaining a photoelectric storage film. The photoelectric storage film of the double-rare earth doped potassium sodium niobate prepared by the application has high transparency, full-waveband fluorescent reading, good stability and bending resistance, and can realize coupling between photochromism and dielectric energy storage in the film material, thereby providing a new opportunity for the application requirement of constructing a future flexible foldable photoelectric storage device.

A method for forming a coating on a substrate formed from zinc sulfide (ZnS) is provided. A ZnS film is grown on the substrate with a radio frequency sputtering process and metal dopants are sputtered on the substrate with a high-power impulse magnetron sputtering process. The metal dopants can be molybdenum or tungsten and simultaneously sputtered while growing the ZnS film. The sputtering ionizes the coating where the coating has a sheet resistance that is less than 50 ohm / square and the metal dopants form n-type dopants in the ZnS film. The metal dopants can be formed at a concentration that varies with a thickness of the ZnS film. At a first thickness, the concentration is at a first concentration and at a second thickness greater than the first thickness, the concentration is at a second concentration less than the first concentration.