Epitaxy growing method for La1-xCaxMnO3 single crystal thin film

A single crystal thin film, epitaxial growth technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of unfavorable application, poor film uniformity, high price, etc.

Inactive Publication Date: 2008-08-06
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, people generally adopt the method of pulse laser deposition (Pulse Laser Deposition) and laser molecular beam epitaxy (L-MBE) on LaAlO 3 and SrTiO 3 Epitaxial growth of La on single crystal substrate 1-x Ca x MnO 3 Single crystal thin film, but pulsed laser deposition and molecular beam epitaxy equipment are expensive, and the uniformity of the thin film deposited on a large area substrate is poor, which is not conducive to application

Method used

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  • Epitaxy growing method for La1-xCaxMnO3 single crystal thin film
  • Epitaxy growing method for La1-xCaxMnO3 single crystal thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Example 1: LaAlO polished on the (100) crystal plane 3 Epitaxial growth of La on the substrate 0.67 Ca 0.33 MnO 3 single crystal film.

[0023] 1. The cleaned (100) crystal plane polished LaAlO 3 The substrate (produced by Beijing Wuke Photoelectric Technology Co., Ltd.) is placed on the sample holder of the vacuum chamber of the DPS-III ultra-high vacuum target magnetron sputtering coating machine of the Shenyang Science and Technology Center of the Chinese Academy of Sciences, and the vacuum chamber is closed;

[0024] 2. The vacuum degree at the back is 2.0×10 -5 At Pa, start heating the substrate, and finally maintain the substrate temperature at 800°C;

[0025] 3. Set the opening degree of the ultra-high vacuum gate valve to 25%, and pass high-purity Ar gas and high-purity O to the vacuum chamber 2 Gas, Ar and O 2 The volume ratio is 4:1, adjust the flowmeter to keep the vacuum chamber pressure at 0.5Pa;

[0026] 4. Close the substrate baffle and adjust the...

Embodiment 2

[0032] Example 2: LaAlO polished on (100) crystal plane 3 Epitaxial growth of La on the substrate 0.8 Ca 0.2 MnO 3 single crystal film.

[0033] 1. The cleaned (100) surface polished LaAlO 3 The substrate (produced by Beijing Wuke Photoelectric Technology Co., Ltd.) is placed on the sample holder of the vacuum chamber of the DPS-III ultra-high vacuum target magnetron sputtering coating machine of the Shenyang Science and Technology Center of the Chinese Academy of Sciences, and the vacuum chamber is closed;

[0034] 2. The vacuum degree at the back is 1.0×10 -5 At Pa, start to heat the substrate, and finally the substrate temperature is kept at 750°C;

[0035] 3. Set the opening degree of the ultra-high vacuum gate valve to 20%, and pass high-purity Ar gas and high-purity O to the vacuum chamber 2 Gas, Ar and O 2 The volume ratio is 7:3, adjust the flowmeter to keep the vacuum chamber pressure at 0.4Pa;

[0036] 4. Close the substrate baffle and adjust the radio freque...

Embodiment 3

[0042] Example 3: SrTiO polished on the (100) crystal plane 3 Epitaxial growth of La on the substrate 0.52 Ca 0.48 MnO 3 single crystal film.

[0043] 1. The cleaned (100) surface polished SrTiO 3 The substrate (produced by Hefei Kejing Material Technology Co., Ltd.) is placed on the sample holder of the vacuum chamber of the DPS-III ultra-high vacuum target magnetron sputtering coating machine of the Shenyang Keyi Center of the Chinese Academy of Sciences, and the vacuum chamber is closed;

[0044] 2. The vacuum degree at the back is 1.5×10 -5 At Pa, start heating the substrate, and finally maintain the substrate temperature at 700°C;

[0045] 3. Set the opening degree of the ultra-high vacuum gate valve to 15%, and pass high-purity Ar gas and high-purity O gas into the vacuum chamber 2 Gas, Ar and O 2 The volume ratio is 9:1, adjust the flowmeter to keep the vacuum chamber pressure at 0.3Pa;

[0046] 4. Close the substrate baffle and adjust the radio frequency power ...

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Abstract

The invention relates to a method for growing La1-xCaxMnO3 single crystal thin film by a simple device, wherein the thin film is prepared by adopting the magnetic control radio-frequency sputtering method, rare-earth manganese oxide polycrystalline ceramic target which is prepared by the solid state reaction method is adopted as the target material, single crystal substrate which is matched with the rare-earth manganese oxide is adopted as the basement, the requirement of the back side vacuum degree of the sputtering device is higher than 2.0*10<-5>Pa, the temperature of the basement is between 700 DGE C and 900 DGE C, the sputtering power is between 150W and 200W, the sputtered thin film needs to be annealed under 900-1000 DEG C for 24 hours, the rare-earth manganese oxide single crystal thin film and the buffer layer of the substrate which are prepared by the preparing method are not obvious, the components of the thin film are accorded with that of the target material, the method has low cost and is convenient to grow in large area.

Description

technical field [0001] The invention belongs to the technical field of functional materials, and is an exogenous long La 1-x Ca x MnO 3 single crystal thin film method. Background technique [0002] La 1-x Ca x MnO 3 Due to its huge magnetoresistance effect, these materials have attracted widespread attention. These materials have a spin polarizability of 100%, are semi-metallic materials, and can be used in the preparation of magnetic tunnel junctions and spin selectors (only a single spin The electrons pass through), because of its interaction with SrTiO 3 The lattice constants are matched, while the niobium-doped SrTiO 3 It is an excellent semiconductor material, compounded with rare earth manganese oxide single crystal thin film, and can be used in the research and development of spintronic devices. Therefore, the preparation of high-quality La 1-x Ca x MnO 3 Single crystal thin films are very necessary. At present, people generally adopt the method of pulse l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B29/22
Inventor 李志青李养贤刘晖高艳卿姜恩永
Owner TIANJIN UNIV
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