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Nano-composite ZnO-ZnSb phase-change storage thin film material and preparation method thereof

A phase-change storage and thin-film material technology, applied in the direction of electrical components, etc., can solve the problem of reducing the reliability of the PCM phase-change layer and electrode interface, and achieve the effects of improving interface reliability, fast crystallization speed, and high crystallization temperature

Active Publication Date: 2018-05-25
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the two-step crystallization behavior of transforming into a metastable ZnSb crystal phase at around 250 °C and into a stable ZnSb phase at around 350 °C will reduce the interface reliability between the PCM phase change layer and the electrode.

Method used

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  • Nano-composite ZnO-ZnSb phase-change storage thin film material and preparation method thereof
  • Nano-composite ZnO-ZnSb phase-change storage thin film material and preparation method thereof
  • Nano-composite ZnO-ZnSb phase-change storage thin film material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] In the magnetron sputtering coating system, the quartz or silicon oxide wafer is used as the substrate, the ZnO ceramic target is installed on the magnetron DC sputtering target, and the ZnSb alloy target is installed on the magnetron radio frequency sputtering target. Vacuum the sputtering chamber of the magnetron sputtering coating system until the indoor vacuum reaches 5.6×10 -4 Pa, then pass high-purity argon gas with a volume flow of 50.0ml / min into the sputtering chamber until the pressure in the sputtering chamber reaches 0.30Pa for the sputtering starting pressure, and then control the sputtering power of the ZnO ceramic target to 3W , The sputtering power of the ZnSb alloy target is 35W, and the two targets are co-sputtered at room temperature. After the sputtering thickness is 180nm, the deposited nanocomposite (ZnSb) is obtained. 100-x (ZnO) x Phase change storage film material. Where x=5.3, the chemical structural formula is (ZnSb) 94.7 (ZnO) 5.3 .

[0023] Th...

Embodiment 2

[0025] The difference is that during the sputtering process, the sputtering power of the ZnO ceramic target is controlled to be 8W, and the sputtering power of the ZnSb alloy target is 35W. The two targets are co-sputtered and coated at room temperature, and the sputtering thickness is After 180 nm, the as-deposited nanocomposite (ZnSb) is obtained 100-x (ZnO) x Phase change storage film material. Where x=9.5, the chemical structure is (ZnSb) 90.5 (ZnO) 9.5 .

[0026] The prepared thin film material is tested for in-situ resistance, and the test results are as follows figure 1 with figure 2 Shown from figure 1 with figure 2 It can be seen that the performance indicators of the film prepared in this example are as follows: crystallization temperature T c It is 287℃, the highest temperature of ten-year retention capacity is 216.7℃, and the amorphous / crystalline resistance ratio is 2.20×10 5 .

Embodiment 3

[0028] The difference is that during the sputtering process, the sputtering power of the ZnO ceramic target is controlled to 12W, and the sputtering power of the ZnSb alloy target is 35W. The two targets are co-sputtered and coated at room temperature, and the sputtering thickness After 180 nm, the as-deposited nanocomposite (ZnSb) is obtained 100-x (ZnO) x Phase change storage film material. Where x=12.3, that is, the chemical structure is (ZnSb) 87.7 (ZnO) 12.3 .

[0029] The prepared thin film material is tested for in-situ resistance, and the test results are as follows figure 1 with figure 2 Shown from figure 1 with figure 2 It can be seen that the performance indicators of the film prepared in this example are as follows: crystallization temperature T c It is 294℃, the highest temperature of ten-year retention capacity is 220.5℃, and the amorphous / crystalline resistance ratio is 7.29×10 5 .

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Abstract

The invention discloses a nano-composite ZnO-ZnSb phase-change storage thin film material and a preparation method thereof. The nano-composite ZnO-ZnSb phase-change storage thin film material is characterized in that the chemical structural formula of the material is (ZnSb)100-x(ZnO)x, 0<x<20. The preparation method of the material comprises the following steps: mounting a ZnO ceramic target material on a magnetron DC sputtering target; mounting a ZnSb alloy target material on a magnetron radio frequency sputtering target; vacuumizing a sputtering chamber of a magnetron sputtering coating system; then, inputting a high-purity argon gas into the sputtering chamber until the pressure of the sputtering chamber reaches luminance build-up pressure 0.30 Pa; then, fixing sputtering power of a ZnSb radio frequency target to be 35W, and adjusting and controlling the sputtering power of a ZnO DC target to be 3-21W; and carrying out dual target co-sputtering coating under the room temperature, and after sputtering thickness reaching 180 nm, obtaining a phase-change storage thin film material. The nano-composite ZnO-ZnSb phase-change storage thin film material has the advantages of high crystallization temperature, fast crystallization rate, high amorphous state / crystalline resistance ratio and being capable of realizing direct crystal phase transfer from an amorphous state to a stable state.

Description

Technical field [0001] The invention relates to the technical field of phase change storage materials, in particular to a nano composite ZnO-ZnSb film material and a preparation method thereof. Background technique [0002] Chalcogenide thin film materials are widely used in electrical storage and optical data storage in DVDs. This chalcogenide film is similar to the glass it is made of, and it exhibits high infrared transmittance and high electrical resistance in an amorphous state. However, under the action of laser pulses or electric pulses, the chalcogenide film after crystallization exhibits considerable light reflectivity and conductivity. Due to its excellent performance such as high speed, high density, low power consumption, long life and good scalability, the chalcogenide film is most expected to be used as a storage medium in the next generation of non-volatile memory (PCM). [0003] Located in GeTe-Sb 2 Te 3 Ge in the ternary structure diagram 2 Sb 2 Te 5 (GST) is one...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/231H10N70/011
Inventor 王国祥李超聂秋华沈祥吕业刚张亚文
Owner NINGBO UNIV
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