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Preparation method of low-residual-stress copper film

A residual stress and copper thin film technology, applied in the field of metal thin film preparation, can solve the problems of complex copper thin film preparation process, lack of residual stress, and high requirements for experimental equipment, achieving excellent and simple test methods, easy preparation methods, and easy requirements. control effect

Inactive Publication Date: 2013-01-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0006] The film quality of the film prepared by the above-mentioned preparation of the Cu film and the test and elimination method of the residual stress is good, and the residual stress in the entire film is correspondingly reduced, but there are still corresponding defects: the preparation process is more complicated, The required experimental equipment is also relatively high, and the requirements for the substrate are also very high
[0007] In summary, the traditional copper thin film preparation process is relatively complicated, and there is no effective control method for the magnitude of the residual stress generated during the preparation process.

Method used

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preparation example Construction

[0035] In terms of specific implementation, the preparation method comprises the following steps:

[0036] 1. Pretreat the substrate;

[0037] 2. Place the pretreated substrate in the magnetron sputtering chamber;

[0038] 3. Vacuumize the magnetron sputtering chamber;

[0039] 4. Inject high-purity argon gas into the magnetron sputtering chamber;

[0040] 5. Adjust the radio frequency sputtering power and air pressure, sputter the magnetron sputtering target, and form a copper film on the substrate;

[0041] 6. After the magnetron sputtering chamber is cooled, take out the copper thin film sample for residual stress test.

[0042] The sputtering target in the sputtering chamber of the present invention adopts a copper target, the target base distance is 100 mm, the diameter is 55 mm, the thickness is 5 mm, and the purity of the copper material is 99.99%.

[0043] For step 1, the substrate can be a silicon (Si) substrate with a resistivity of 3~5Ω.cm, a thickness of 525±20...

Embodiment 1

[0048] In this example, the selection of materials and process parameters for preparing the copper film is as follows: the temperature of the substrate is selected as 25 ° C; the selection of the substrate: Si single crystal substrate, the radio frequency power is 100W, and the frequency is 13.56MHz; the magnetron sputtering equipment used The high-purity silicon target size is 2×2cm 2 ; Target base distance is 100mm. The background vacuum is pumped to 4.0×10 by mechanical pump and molecular pump -4 Pa, the working pressure after the Ar gas is introduced is 0.7Pa, and the sputtering time is 4min.

[0049] The residual stress of the Cu film prepared on the QX-500-2 / D ultra-high vacuum multi-target magnetron sputtering coating equipment using the above materials and process parameters combined with the preparation method of the present invention is 332.33 MPa.

Embodiment 2

[0051] The materials and process parameters for preparing the copper film in this example are basically the same as in Example 1, except that the sputtering time is changed to 6min. The residual stress of the Cu film prepared on the ultra-high vacuum multi-target magnetron sputtering coating equipment is 233.33MPa.

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Abstract

The invention relates to preparation technology of a metal film, and discloses a new simple and convenient preparation method of a copper film. The invention effectively controls the magnitude of residual stress generated in the preparation process, thereby implementing preparation of the low-residual-stress copper film material. The method is applied to a magnetron sputtering coating device, and adopts radio-frequency magnetron sputtering to prepare the copper film. The magnetron sputtering coating device is provided with a magnetron sputtering chamber, and a magnetron sputtering target is arranged in the magnetron sputtering chamber. The method comprises the following steps: a. pretreating a substrate; b. putting the pretreated substrate in the magnetron sputtering chamber; c. vacuumizing the magnetron sputtering chamber; d. introducing high-purity argon into the magnetron sputtering chamber; e. regulating the radio-frequency sputtering power and gas pressure, and sputtering the magnetron sputtering target to form the copper film on the substrate; and f. after cooling the magnetron sputtering chamber, taking out the copper film sample, and carrying out residual stress testing.

Description

technical field [0001] The present invention relates to the preparation technology of metal thin film, specifically, relate to a kind of copper (Cu) thin film preparation method of low residual stress. Background technique [0002] At present, residual stress will inevitably be generated during the preparation of metal materials, and the size of the residual stress will seriously affect the performance of the metal material and its practical application; generally speaking, the factors that affect the size of the residual stress of the metal material are: process Means and preparation parameters. [0003] In the patent application whose application number is 200580000371, a method for preparing Cu film is provided, which is mainly to gasify Cu carboxylic acid complex or its derivatives with high vapor pressure and good wettability to the substrate, as Raw gas is used, and H is used 2 As the reducing gas, the raw material gas is adsorbed on the substrate, and the reducing g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/14
Inventor 唐武王学慧
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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