63results about How to "Improve membrane quality" patented technology

A film deposition apparatus has a vacuum chamber in which a turntable placing plural substrates is rotated, the plural substrates come into contact with plural reaction gases supplied to plural process areas and thin films are deposited on surfaces of the plural substrates, and has plural reaction gas supplying portions for supplying the plural processing gases, a separation gas supplying portion for supplying a separation gas and an evacuation mechanism for ejecting the plural processing gases and the separation gas, wherein the plural process areas includes a first process area for causing a first reaction gas to adsorb on the surfaces of the plural substrates, and a second process area, having an area larger than the first process area, for causing the first reaction gas having adsorbed the surfaces of the plural substrates and a second reaction gas to react, and depositing the films on the surfaces of the plural substrates.

The invention relates to a substrate elevation pin installed on the upper part of the substrate support. The substrate elevation pin enables the upper part surface of the elevation pin to be closely contact with the lower part of the substrate through elastic support when the substrate is installed on the upper part of the substrate and is positioned inside the substrate support. As a result, the heat of the substrate support is effectively transmitted to the substrate on the upper part of the elevation pin to enable the substrate to maintain uniform temperature to prevent the membrane from being abnormal and producing strips.

A film deposition apparatus includes a vacuum chamber, and a turntable having a substrate receiving area provided in the vacuum chamber. A heating unit is provided to heat the turntable so as to heat the substrate up to 600 degrees C. or higher. A process gas supply part is provided to supply a process gas having a decomposition temperature of 520 degrees C. or lower under 1 atmospheric pressure or lower, to the substrate. A gas shower head is provided in the process gas supply part and has a plurality of gas discharge holes provided in an opposed part facing a passing area of the substrate placed on the turntable. A cooling mechanism is provided in the process gas supply part and is configured to cool the opposed part in the gas shower head up to a temperature lower than the decomposition temperature of the process gas.

The invention provides a plasma treatment apparatus which can reduce an effective inductance of an antenna and restrain a potential difference generated between two ends in a length direction of the antenna to be a small potential difference, thereby restraining a plasma potential to be a low potential and raising uniformity of plasma density distribution in the length direction of the antenna. The antenna (30) which constitutes the plasma treatment apparatus and has a substantially-straight flat shape presents a return conductor structure, i.e., two rectangular conductor plates (31, 32) are disposed in a manner that the two plates are in the same plane, close to and parallel with each other, and provided with a gap (34) therebetween, and one end in the length direction (X) of the two conductor plates are connected by using a conductor (33). High-frequency currents (1R) flow to the two conductor plates (31, 32) in a reverse manner. Opening parts (37) form on an edge at the gap side of the two conductor plates (31, 32) and are dispersedly disposed in the length direction (X) of the antenna (30).

According to one embodiment of the present invention, a method for depositing an insulating film on a recessed portion in a substrate, in which the recessed portion having an aspect ratio of 5:1 or greater is formed, comprises: an insulating film deposition step of performing an adsorption step of injecting a silicon precursor into a chamber in which the substrate is loaded so as to adsorb silicon onto the substrate, a first purge step of removing an unreacted silicon precursor and a reaction byproduct from the inside of the chamber, a reaction step of forming the silicon, having been adsorbed, by providing a first reaction source to the interior of the chamber as an insulating film including silicon, and a second purge step of removing an unreacted first reaction source and a reaction byproduct from the interior of the chamber; and a densification step of forming a plasma atmosphere inside the chamber by applying RF power thereto, and densifying the insulating film including silicon by using the plasma atmosphere, wherein the frequency of the RF power ranges from 400 kHz to 2 MHz.

The invention provides a nitride semiconductor light emitting element wherein emission output deterioration due to film quality deterioration of a nitride semiconductor layer due to lattice mismatch between a substrate and the nitride semiconductor layer is prevented and light traveling to the substrate can be also efficiently used, while permitting the light emitting element to be a vertical type, by using the SiC substrate. A light reflecting layer (2) wherein low refractive index layers (21) and high refractive index layers (22) having different refractive indexes are alternately stacked is directly arranged on the SiC substrate (1). On the light reflecting layer (2), a semiconductor multilayer section (5) wherein a nitride semiconductor layer is stacked to have at least a light emitting layer forming section (3) is arranged on the light reflecting layer (2). On an upper plane side of the semiconductor multilayer section (5), an upper electrode (7) is arranged, and on a rear plane of the SiC substrate (1), a lower electrode (8) is arranged.

A photovoltaic apparatus capable of improving output characteristics is provided. This photovoltaic apparatus includes at least one power generation unit having a first conductivity type first non-single-crystalline semiconductor layer (3, 13, 43, 53, 63, 73, 83) including at least one layer, a substantially intrinsic second non-single-crystalline semiconductor layer (4, 14, 44, 54, 64, 74, 84) including at least one layer and a second conductivity type third non-single-crystalline semiconductor layer (5, 15, 45, 55, 65, 75, 85) including at least one layer, and at least one of the layer constituting the first non-single-crystalline semiconductor layer, the layer constituting the second non-single-crystalline semiconductor layer and the layer constituting the third non-single crystalline semiconductor layer has a preferred crystal orientation plane different from those of the remaining layers.

Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate having a silicon-containing film formed thereon into a process chamber; (b) supplying a gas into the process chamber from a gas supply unit until an inner pressure of the process chamber is equal to or greater than atmospheric pressure; and (c) supplying a process liquid from a process liquid supply unit to the substrate to oxidize the silicon-containing film.

The invention provides a plasma processing device which is an inductive coupling device and can reduce the effective inductance coefficient to restrain the plasma electrical potential more lower, and can control the plasma density distribution along the length direction through an antenna. Return conductors (31, 32) are arranged vertically on the vertical line (3) direction, namely the up and down direction (Z), of the surface of a substrate (2) and make the high frequency current (IR) flow retroactively to form an antenna with straight plane shape. The interval (D) of the up and down direction (Z) between the return conductors (31, 32) changes at the length direction (X).

Provided are a film-forming method and a film-forming device for forming passivation films that can sufficiently inhibit loss due to carrier re-binding, and a solar cell element manufacturing method using same. The device is provided with a mounting part (22) for mounting the film-forming target, a high frequency power source (25), and a shower plate (23) that is provided to face the film-forming target (S) that is mounted on the mounting part (22), introduces the film-forming gas, and to which is connected the high frequency power source and to which a high frequency voltage is applied. A low frequency power source (26) is connected to the shower plate or the substrate-mounting part and applies a lower frequency voltage. The film-forming method is implemented using said film-forming device, and said film-forming method is implemented when forming passivation films.

The present invention is a conductive polymer composition, which has good filterability and film-formability of a flat film onto an electron beam resist, and is suitably usable for a antistatic film for electron beam resist drawing having lower surface resistivity (Omega / wei) to show excellent antistatic performance in an electron beam drawing process, and excellent peelability with HO or an alkaline developer after drawing. The conductive polymer composition includes (A) a polyaniline-based conductive polymer having two or more kinds of repeating units shown by the following general formula (1); and (B) a dopant polymer which contains a repeating unit shown by the following general formula (2) and has a weight-average molecular weight in a range of 1,000 to 500,000.