62results about How to "Improve membrane quality" patented technology

The invention relates to a liquid crystal orientation agent, a liquid crystal orientation film, a manufacturing method of the liquid crystal orientation film, and a liquid crystal display element. The liquid crystal orientation agent has good printing performance with respect to a substrate and good continuous printing performance and prevents swelling of printing plates. The liquid crystal orientation agent contains at last one polymer (A) selected from the group formed by polyamide acid, polyimide, polyamide acid ester and polysiloxane, a first solvent containing more than one of N-ethyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolone, 3-methoxy-N, N-dimethylpropionamide and so on, and a second solvent containing more than one of propylene glycol diacetate, diethylene glycol diethyl ether, diisoamyl ether diacetone alcohol and so on.

The invention discloses a Mo-based nitride composite hard film and a preparation method, wherein the substrate is coated with nanometer composite hard film that is made of Mo-based metal nitride or nonmetal nitride, the crystallized size of the film is 5-40nm, the thickness of the film is 1-5Mum, the molar percentage between the Mo element and the substitution element in the film is 50 to 94% : 6 to 50%; the preparation method is that: (a) the target material (made of Mo and the substitution) and the substrate are respectively arranged on the cathode and sample table in vacuum room of magnetic control sputtering equipment, the area ratio of the Mo and the substitution in the target material is 1 to 8 : 8 to 1, the distance between the target material and the substrate is 40-80mm; (b) after the vacuum degree in the vacuum room is less than or equal to 8 x 10-4pa and substrate temperature reaches 300 to 500 DEG C, the vacuum room is made to be in the atmosphere of argon and nitrogen mixed gas and 30-130 minutes sputtering is made so as to prepare the Mo-based nitride composite hard film. The invention can widely be used for material protection and can improve abradability and durability of material obviously.

The invention relates to preparation technology of a metal film, and discloses a new simple and convenient preparation method of a copper film. The invention effectively controls the magnitude of residual stress generated in the preparation process, thereby implementing preparation of the low-residual-stress copper film material. The method is applied to a magnetron sputtering coating device, and adopts radio-frequency magnetron sputtering to prepare the copper film. The magnetron sputtering coating device is provided with a magnetron sputtering chamber, and a magnetron sputtering target is arranged in the magnetron sputtering chamber. The method comprises the following steps: a. pretreating a substrate; b. putting the pretreated substrate in the magnetron sputtering chamber; c. vacuumizing the magnetron sputtering chamber; d. introducing high-purity argon into the magnetron sputtering chamber; e. regulating the radio-frequency sputtering power and gas pressure, and sputtering the magnetron sputtering target to form the copper film on the substrate; and f. after cooling the magnetron sputtering chamber, taking out the copper film sample, and carrying out residual stress testing.

The invention relates to a substrate elevation pin installed on the upper part of the substrate support. The substrate elevation pin enables the upper part surface of the elevation pin to be closely contact with the lower part of the substrate through elastic support when the substrate is installed on the upper part of the substrate and is positioned inside the substrate support. As a result, the heat of the substrate support is effectively transmitted to the substrate on the upper part of the elevation pin to enable the substrate to maintain uniform temperature to prevent the membrane from being abnormal and producing strips.

The invention provides a film forming device and method capable of improving filming efficiency of a diamond film; the film forming device (10) comprises the following elements: a chamber (1) with a processing room (V); a low inductance coupling antenna (21) arranged in the processing room (V); a high frequency power supply portion (24) intermittently supplying power to the inductance coupling antenna (21); an air supply portion (3) supplying hydrocarbon air to the processing room (V); a relative mobile portion (4) enabling a substrate material (9), being object material of film formation, to move against the inductance coupling antenna (21); a voltage application portion (5) used for applying cathode voltage to the substrate material (9) when high frequency power is temporally stopped to the inductance coupling antenna (21).

The structure of semiconductor alloy capacitance includes lower electrode, dielectric layer and upper electrode in sequence from lower to upper. The dielectric layer includes an oxide film layer, an ammoniated film layer, and another oxide film layer from lower to upper. Using multiple dielectric layers, the structure makes semiconductor alloy capacitance possible to reserve each advantage of oxide film layer, and ammoniated film layer, and overcome disadvantage of small dielectric coefficients of the film layers, and lot of pinholes on the film layers. The invention also discloses method for etching the capacitance. After etching out upper electrode, and using condition of selection ration in high etching speed, the method etches out uppermost oxide film layer, and stops etching operation when the ammoniated film layer is met. Advantages are: easy of implementation, large technical window for etching time, even thickness of dielectric layer, and raised quality and efficiency.

The present invention provides a film-forming apparatus, which is capable of forming, on a substrate, a film having excellent film qualities, and which is capable of effectively using a solution in a film-forming process, said film-forming apparatus having a small size as a whole. This film-forming apparatus is provided with a spray nozzle (1), a first chamber (2), a first gas supply port (3a), a second chamber (4), a through hole (5), and a spraying port (10). The solution jetted in a droplet form from the spray nozzle (1) is stored in the first chamber (2), and the solution is atomized in the first chamber (2) by means of a gas supplied through the first gas supply port (3a). The atomized solution moves from the first chamber (2) to the second chamber (4) through the through hole (5), and is sprayed toward a substrate (50) from the spraying port (10) that is provided in the second chamber (4).

The invention discloses a method for preparing ultraviolet excited or vacuum ultraviolet excited green emitting phosphor. The method comprises the following steps of: weighing Al2O3, MgO, Tb3O4 and CeO2 in a mass ratio, sieving all raw materials by using a 100-mesh sieve, mixing by a dry method, introducing one or more of BaCO3, MgCl2, AlF3, MgF2, BaF2 and H3BO3 into the uniformly mixed raw materials, and fully mixing; loading the mixed powder into an alumina crucible; firing at high temperature at reducing atmosphere; crushing the fired fluorescent powder blocks, and sieving by using the 100-mesh sieve; dispersing by a wet method to obtain slurry; controlling the particle size to be 2 to 12 mu m; sieving the slurry which is obtained by wet-method dispersing by using a 500-mesh sieve; removing the sieving residues on the 500-mesh sieve; washing with water; and suction-filtering, drying and screening to obtain the green emitting phosphor. The green emitting phosphor has the characteristics of controllable particle size, high brightness, light failure, color development and low color bleaching.

Disclosed is a process for producing a high-performance semiconductor light-emitting element substrate, which has a reduced production time. Specifically disclosed is a process for producing a semiconductor light-emitting element substrate, which is characterized by comprising: a substrate heating step (S3) of heating a substrate; a substrate washing step (S6) of washing the substrate (S); a dielectric material layer formation step (S7) of depositing dielectric material layers (H, L) on the substrate (S); a substrate heating termination step (S8) of terminating the heating of the substrate; a cooling step (S9) of absorbing a radiation heat by means of cooling means (11, 12, 13) to cool the substrate (S) and a substrate supporting means (3); and a reflective layer formation step (S11) of depositing a reflective layer (R) on the dielectric material layers (H, L).

The invention discloses a preparation method of yttria gadolinium-europium red fluorescent powder, which comprises the steps of: mixing 60-80 weight percent of Y2O3, 10-40 weight percent of Gd2O3 and 1-10 weight percent of Eu2O3 by a dry method after the materials are screened by a 100-mesh screen, putting the uniformly mixed materials in a crucible, firing the materials for 4-10 hours under the high temperature of 900-1400 DEG C, screening the fired fluorescent powder blocks by the 100-mesh screen, scattering the powder into slurry by a wet method, washing the scattered slurry for 2-5 times, then filtering and drying the slurry for 8-24 hours at 110-120 DEG C, and screening the dried powder by the 100-mesh screen to obtain the yttria gadolinium-europium red fluorescent powder.

An organic thin film having excellent film qualities is formed. A vapor generating apparatus (20) is provided with an evaporation chamber (21), a jetting head (35) and a tank (31). A deposition material (39) is in the liquid state, stored in the tank (31) and supplied to the jetting head (35) from the tank (31). The jetting head (35) jets the deposition material (39), which has been supplied inside, from a jetting port (38), and places the deposition material on a heating member (25) inside the evaporation chamber (21). The jetting head (35) correctly supplies the deposition material (39) of a required quantity. Since only the required quantity of the deposition material (39) is heated, the organic thin film which does not deteriorate and has excellent film qualities is formed.

The invention discloses a manufacturing method of a shallow trench isolation structure. The manufacturing method comprises the following steps: step 1, forming a shallow trench on a semiconductor substrate; step 2, coating a polyazosilane layer; and step 3, performing the oxygen-nitrogen replacement process to convert the polyazosilane layer into a silicon dioxide layer and form a shallow trench isolation structure; wherein the oxygen-nitrogen replacement process includes more than two times of furnace tube water vapor process, and a thermal annealing process and a thinning process are included between the two times of furnace tube water vapor process. The PSZ can be applied to realize good filling of the shallow trench, the oxygen-nitrogen replacement effect of the PSZ and the compactnessof the converted silicon dioxide can be improved so as to improve the film quality of the silicon dioxide and reduce the thermal process of the active region.

The invention belongs to a metal surface coating method and concretely relates to a method for coating a film on the inner surface of a copper tube of a condenser in a thermal power plant. The method comprises the following steps: 1, injecting clear water to a cleaning box, and heating; 2, preparing a coating liquid comprising water, potassium persulphate, sodium hydroxide and triethanolamine, wherein the coating liquid: water: potassium persulphate: sodium hydroxide: triethanolamine ratio is 1000:8-12:2-3:1-2; and 3, coating: starting a dosing pump, continuously adding the coating liquid prepared in step 2 to the condenser, maintaining the temperature designed in step 1, carrying out continuous cycle for 6-8h, and finishing coating. The potassium persulphate film forming method can reach a one-time coating quality standard, shortens the film forming time to 6-8h from at least 96h, can be used in the one-time coating of the copper tube of the condenser in the large and small repairing processes of a set, and has popularization application values.