63results about How to "Improve membrane quality" patented technology

The invention relates to a substrate elevation pin installed on the upper part of the substrate support. The substrate elevation pin enables the upper part surface of the elevation pin to be closely contact with the lower part of the substrate through elastic support when the substrate is installed on the upper part of the substrate and is positioned inside the substrate support. As a result, the heat of the substrate support is effectively transmitted to the substrate on the upper part of the elevation pin to enable the substrate to maintain uniform temperature to prevent the membrane from being abnormal and producing strips.

The invention provides a plasma treatment apparatus which can reduce an effective inductance of an antenna and restrain a potential difference generated between two ends in a length direction of the antenna to be a small potential difference, thereby restraining a plasma potential to be a low potential and raising uniformity of plasma density distribution in the length direction of the antenna. The antenna (30) which constitutes the plasma treatment apparatus and has a substantially-straight flat shape presents a return conductor structure, i.e., two rectangular conductor plates (31, 32) are disposed in a manner that the two plates are in the same plane, close to and parallel with each other, and provided with a gap (34) therebetween, and one end in the length direction (X) of the two conductor plates are connected by using a conductor (33). High-frequency currents (1R) flow to the two conductor plates (31, 32) in a reverse manner. Opening parts (37) form on an edge at the gap side of the two conductor plates (31, 32) and are dispersedly disposed in the length direction (X) of the antenna (30).

According to one embodiment of the present invention, a method for depositing an insulating film on a recessed portion in a substrate, in which the recessed portion having an aspect ratio of 5:1 or greater is formed, comprises: an insulating film deposition step of performing an adsorption step of injecting a silicon precursor into a chamber in which the substrate is loaded so as to adsorb silicon onto the substrate, a first purge step of removing an unreacted silicon precursor and a reaction byproduct from the inside of the chamber, a reaction step of forming the silicon, having been adsorbed, by providing a first reaction source to the interior of the chamber as an insulating film including silicon, and a second purge step of removing an unreacted first reaction source and a reaction byproduct from the interior of the chamber; and a densification step of forming a plasma atmosphere inside the chamber by applying RF power thereto, and densifying the insulating film including silicon by using the plasma atmosphere, wherein the frequency of the RF power ranges from 400 kHz to 2 MHz.

The invention provides a nitride semiconductor light emitting element wherein emission output deterioration due to film quality deterioration of a nitride semiconductor layer due to lattice mismatch between a substrate and the nitride semiconductor layer is prevented and light traveling to the substrate can be also efficiently used, while permitting the light emitting element to be a vertical type, by using the SiC substrate. A light reflecting layer (2) wherein low refractive index layers (21) and high refractive index layers (22) having different refractive indexes are alternately stacked is directly arranged on the SiC substrate (1). On the light reflecting layer (2), a semiconductor multilayer section (5) wherein a nitride semiconductor layer is stacked to have at least a light emitting layer forming section (3) is arranged on the light reflecting layer (2). On an upper plane side of the semiconductor multilayer section (5), an upper electrode (7) is arranged, and on a rear plane of the SiC substrate (1), a lower electrode (8) is arranged.

The invention provides a plasma processing device which is an inductive coupling device and can reduce the effective inductance coefficient to restrain the plasma electrical potential more lower, and can control the plasma density distribution along the length direction through an antenna. Return conductors (31, 32) are arranged vertically on the vertical line (3) direction, namely the up and down direction (Z), of the surface of a substrate (2) and make the high frequency current (IR) flow retroactively to form an antenna with straight plane shape. The interval (D) of the up and down direction (Z) between the return conductors (31, 32) changes at the length direction (X).

Provided are a film-forming method and a film-forming device for forming passivation films that can sufficiently inhibit loss due to carrier re-binding, and a solar cell element manufacturing method using same. The device is provided with a mounting part (22) for mounting the film-forming target, a high frequency power source (25), and a shower plate (23) that is provided to face the film-forming target (S) that is mounted on the mounting part (22), introduces the film-forming gas, and to which is connected the high frequency power source and to which a high frequency voltage is applied. A low frequency power source (26) is connected to the shower plate or the substrate-mounting part and applies a lower frequency voltage. The film-forming method is implemented using said film-forming device, and said film-forming method is implemented when forming passivation films.