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Photovoltaic apparatus

A technology for optoelectronic devices and photoelectric conversion layers, which can be used in photovoltaic power generation, circuits, electrical components, etc., and can solve problems such as difficulty in light trapping effect, difficulty in output characteristics, and difficulty in light scattering.

Inactive Publication Date: 2005-03-16
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, since the p-type layer and the surface electrode sequentially formed on the photoelectric conversion layer are also substantially in a flat shape, it becomes difficult to scatter incident light by the surface of the p-type layer and the surface electrode.
Therefore, in the photovoltaic device according to the above-mentioned Japanese Patent Laid-Open No. 2002-33500, it becomes difficult to improve the light trapping effect by scattering near the surface side.
As a result, in the conventional photoelectric device including the photoelectric conversion layer composed of the microcrystalline silicon-based semiconductor layer disclosed in the above-mentioned Japanese Unexamined Patent Application Publication No. 2002-33500, since incident light is more efficiently absorbed into the photoelectric conversion layer, it becomes difficult, so there is a problem that it becomes difficult to improve output characteristics

Method used

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Examples

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Effect test

Embodiment 1

[0049] refer to figure 1 , First, the structure of the photovoltaic device according to Embodiment 1 of the present invention will be described.

[0050] In the photovoltaic device according to Embodiment 1, such as figure 1 As shown in , on a flat stainless steel plate (SUS430) 1 a having a thickness of 0.15 mm, a polyimide resin 1 b having a thickness of 20 μm was formed. The substrate 1 is formed by this stainless steel plate 1a and polyimide resin 1b. On the substrate 1 (polyimide resin 1b), a flat back electrode 2 composed of Ag (silver) having a thickness of 200 nm was formed.

[0051] On the back electrode 2, an n-type layer 3 composed of an n-type microcrystalline silicon layer having a thickness of 50 nm was formed. On n-type layer 3 , photoelectric conversion layer 4 composed of an undoped microcrystalline silicon layer having a thickness of 2 μm is formed. A p-type layer 5 composed of a p-type microcrystalline silicon layer having a thickness of 20 nm is formed ...

Embodiment 2

[0069] refer to image 3 , First, the structure of the photovoltaic device according to Example 2 fabricated according to the present invention will be described.

[0070] In the photovoltaic device according to the present embodiment 2, such as image 3 As shown in FIG. 1 , the rear electrode 2 is formed on the substrate 1 composed of the stainless steel plate 1 a and the polyimide resin 1 b in the same manner as in the first embodiment. On the back electrode 2, an n-type layer 13 composed of an n-type microcrystalline silicon layer having a thickness of 50 nm was formed. On n-type layer 13 , photoelectric conversion layer 14 composed of an undoped microcrystalline silicon layer having a thickness of 2 μm is formed. A p-type layer 15 composed of a p-type microcrystalline silicon layer having a thickness of 20 nm was formed on the photoelectric conversion layer 14 . Furthermore, a power generating unit is constituted by the n-type layer 13 , the photoelectric conversion lay...

Embodiment 3

[0086] refer to Figure 5 , in this embodiment 3, different from the above-mentioned embodiments 1 and 2, the n-type layer is formed to have a preferential crystal orientation of the (111) plane, and the photoelectric conversion layer and the p-type layer are formed to have the (220) plane Examples of preferred crystallographic orientations are described.

[0087] In the photoelectric device according to the present embodiment 3, such as Figure 5 As shown in FIG. 1 , the rear electrode 2 is formed on the substrate 1 composed of the stainless steel plate 1 a and the polyimide resin 1 b in the same manner as in the first embodiment. On the back electrode 2, an n-type layer 43 composed of an n-type microcrystalline silicon layer having a thickness of 50 nm was formed. On the n-type layer 43 , a photoelectric conversion layer 44 composed of an undoped microcrystalline silicon layer having a thickness of 2 μm is formed. A p-type layer 45 composed of a p-type microcrystalline si...

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Abstract

A photovoltaic apparatus capable of improving output characteristics is provided. This photovoltaic apparatus includes at least one power generation unit having a first conductivity type first non-single-crystalline semiconductor layer (3, 13, 43, 53, 63, 73, 83) including at least one layer, a substantially intrinsic second non-single-crystalline semiconductor layer (4, 14, 44, 54, 64, 74, 84) including at least one layer and a second conductivity type third non-single-crystalline semiconductor layer (5, 15, 45, 55, 65, 75, 85) including at least one layer, and at least one of the layer constituting the first non-single-crystalline semiconductor layer, the layer constituting the second non-single-crystalline semiconductor layer and the layer constituting the third non-single crystalline semiconductor layer has a preferred crystal orientation plane different from those of the remaining layers.

Description

technical field [0001] The present invention relates to photovoltaic devices, and in particular, to photovoltaic devices including at least one power generating unit composed of a plurality of non-single crystal semiconductor layers. Background technique [0002] Conventionally, photovoltaic devices using a microcrystalline silicon-based semiconductor layer as a photoelectric conversion layer are known. Such a photovoltaic device is disclosed, for example, in JP-A-2002-33500. Here, the microcrystalline silicon-based semiconductor is a semiconductor containing a plurality of crystal grains with a maximum particle size equal to or less than several hundred nm, containing Si as a constituent element, and containing an amorphous phase inside. The photoelectric device using the microcrystalline silicon-based semiconductor layer as the photoelectric conversion layer disclosed in the above-mentioned Japanese Unexamined Patent Publication No. 2002-33500 has lower conversion efficie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/04H01L31/0236H01L31/036H01L31/0368H01L31/04H01L31/075H01L31/18
CPCH01L31/0236Y02E10/546H01L31/03682H01L31/02363Y02E10/548
Inventor 岛正树
Owner SANYO ELECTRIC CO LTD
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