PECVD (Plasma Enhanced Vapor Deposition) reaction chamber and support pin for PECVD reaction chamber

A technology of supporting needles and reaction chambers, applied in the field of supporting needles, can solve problems such as affecting display effect, affecting product quality and yield, affecting electrical characteristics, etc., and achieves the effects of improving product quality, reducing quantity, and increasing plasma density

Active Publication Date: 2018-06-26
FUZHOU BOE OPTOELECTRONICS TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, there are also differences between the film formed in the Pin area and the film formed in the normal non-Pin area, forming Mura, affecting product quality and yield, and affecting electrical characteristics, thereby affecting the display effect

Method used

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  • PECVD (Plasma Enhanced Vapor Deposition) reaction chamber and support pin for PECVD reaction chamber
  • PECVD (Plasma Enhanced Vapor Deposition) reaction chamber and support pin for PECVD reaction chamber
  • PECVD (Plasma Enhanced Vapor Deposition) reaction chamber and support pin for PECVD reaction chamber

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Embodiment Construction

[0037] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of example embodiments to those skilled in the art. The drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus repeated descriptions thereof will be omitted.

[0038] Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the present disclosure. However, those skilled in ...

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Abstract

The invention provides a PECVD (Plasma Enhanced Vapor Deposition) reaction chamber and a support pin for the PECVD reaction chamber, which belong to the technical field of semiconductors. The supportpin for the PECVD reaction chamber comprises a pin core , a pin sleeve coating outside the pin core, and at least one layer of spacer arranged on the bottom parts of the pin core and the pin sleeve, wherein the pin core and parts, corresponding to the pin core and the pin sleeve, of the gaskets are made of conductive materials; and the pin sleeve is made of a non-conductive material. According tothe support pin, the pin core is made of the conductive material, and the pin core and the gaskets are grounded, so that the whole support pin is grounded, the number of serially connected capacitorsof a Pin area can be reduced, the plasma density of the Pin area is improved, and a capacitor difference between the Pin area and a non-Pin area is reduced.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular, to a PECVD reaction chamber and a support needle used in the PECVD reaction chamber. Background technique [0002] In the TFT-LCD (Thin Film Transistor Liquid Crystal Display, Thin Film Transistor Liquid Crystal Display English) industry, the support pin Lift Pin is widely used to support the glass substrate. However, due to the use of the supporting pin Pin, it is easy to cause a difference in plasma density between the Pin region and the non-Pin region, which in turn leads to a difference between the film formed in the Pin region and the film formed in the non-Pin region. [0003] In the PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma-enhanced chemical vapor deposition) process, the reactive gas containing the constituent atoms of the film is ionized by microwave or radio frequency to form plasma locally, and the plasma chemical activity is very strong. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/513C23C16/458
CPCC23C16/4581C23C16/513
Inventor 赖彩玲周贺何小强张锐黄舜愿彭新林
Owner FUZHOU BOE OPTOELECTRONICS TECH CO LTD
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