32results about How to "Good photoelectric conversion characteristics" patented technology

The invention relates to a preparing method of a photoelectrochemical sensor based on sandwich cardiac troponin T marked by Ag2Se@CdSe and application, and belongs to the technical field of novel functional materials and biosensing detection. According to concrete contents of the preparing method and the application, CeO2-TiO2 composite nanometer materials with photoelectrocatalytic activity are used as optical activity substrate materials; Ag2Se@CdSe is used as an antibody marker; the sandwich photoelectrochemical sensor is prepared through the signal amplification effect of the marker Ag2Se@CdSe on the substrate materials, and is used for the high-sensitivity detection of the cardiac troponin T of myocardial damage specific marker. The method has the important significance on the early diagnosis and treatment of acute myocardial infarction.

The object of the present invention is to realize high efficiency and improved productivity at the same time. A photoelectric conversion device comprises a unit having a semiconductor structure, the unit comprises: a conductive first impurity semiconductor layer; a conductive second impurity semiconductor layer reverse to the conductive first impurity semiconductor layer; and a semiconductor layer comprising a crystal region over the first impurity semiconductor layer and the second impurity semiconductor layer in an amorphous structure. The flow ratio of the dilution gas is set more than 1 time and less than 10 times of the semiconductor material gas, preferably setting more than 1 time and less than 6 times, and leading in a reaction space to generate plasma to form a semiconductor layer comprising a crystal region.

This dye-sensitized solar cell element for low luminance comprises: at least one dye-sensitized solar cell; a first current drawing part for drawing an electric current from at least one dye-sensitized solar cell; and a second current drawing part for drawing an electric current from at least one dye-sensitized solar cell. Each dye-sensitized solar cell is provided with: a first electrode which has a transparent substrate and a transparent conductive film that is provided on the transparent substrate; a second electrode which faces the first electrode and has a metal substrate; an oxide semiconductor layer which is provided on the first electrode or on the second electrode; and an annular sealing part which joins the first electrode and the second electrode with each other. The first current drawing part is contained in the transparent conductive film of one dye-sensitized solar cell among the at least one dye-sensitized solar cell. The second current drawing part is electrically connected to the metal substrate of the second electrode of one dye-sensitized solar cell among the at least one dye-sensitized solar cell. The first current drawing part and the second current drawing part are arranged to be adjacent to each other.

A photovoltaic apparatus capable of improving output characteristics is provided. This photovoltaic apparatus includes at least one power generation unit having a first conductivity type first non-single-crystalline semiconductor layer (3, 13, 43, 53, 63, 73, 83) including at least one layer, a substantially intrinsic second non-single-crystalline semiconductor layer (4, 14, 44, 54, 64, 74, 84) including at least one layer and a second conductivity type third non-single-crystalline semiconductor layer (5, 15, 45, 55, 65, 75, 85) including at least one layer, and at least one of the layer constituting the first non-single-crystalline semiconductor layer, the layer constituting the second non-single-crystalline semiconductor layer and the layer constituting the third non-single crystalline semiconductor layer has a preferred crystal orientation plane different from those of the remaining layers.

A copolymer as an electron donor material and an organic photovoltaic element comprising the copolymer are provided. The copolymer has wide absorption wavelength distribution and high absorbance in an ultraviolet-visible region, so that the copolymer can be used as an electron donor material with a wide energy gap, and the copolymer has excellent photoelectric conversion characteristics.

A solar cell comprises a first conduction-type semiconductor substrate having on one surface a second conduction-type impurity-diffusing layer wherein impurity elements are diffused; a passivation film formed on the impurity-diffusing layer from an oxide film of the material in the semiconductor substrate; an anti-reflection film formed on the passivation film from a translucent material having a refractive index different from that of the oxide film; a light-receiving front surface electrode that is connected electrically to the impurity-diffusing layer and is formed on the one surface of the semiconductor substrate; and a back surface electrode formed on the other surface of the semiconductor substrate. The impurity-diffusing layer is formed from a first impurity-diffusing layer, which is the light-receiving region and contains impurity elements at a first concentration, and a second impurity-diffusing layer, which is the lower region of the light-receiving front surface electrode and contains impurity elements at a second concentration higher than the first concentration, wherein the surface state of the first impurity-diffusing layer and second impurity-diffusing layer is the same and the thickness of the passivation film on the second impurity-diffusing layer is thinner than the film thickness of the passivation film on the first impurity-diffusing layer.

An electrolyte composition containing ionic liquid having dicyanamide anions as anions. Examples of cations of the ionic liquid, may include, for example, cations having quaternized nitrogen atom. This electrolyte composition may contain halogen-based oxidized / reduced pair. This electrolyte composition is used as an electrolyte of a photoelectric conversion element.

The invention relates to a preparation method and application of a photoelectrochemical sensor based on Ag2SeCdSe-labeled sandwich cardiac troponin T, and belongs to the technical fields of new functional materials and biosensing detection. Specifically, the present invention uses CeO2-TiO2 composite nanomaterials with photocatalytic activity as the photoactive base material, uses Ag2SeCdSe as the antibody marker, and prepares a sandwich-type photoelectrochemical sensor through the signal amplification effect of the marker Ag2SeCdSe on the base material, which is used for myocardial Highly sensitive detection of the injury-specific marker cardiac troponin T. This method is of great significance to the early diagnosis and treatment of acute myocardial infarction.

The present invention provides a dye-sensitized solar cell element for low-illuminance, which has: at least one dye-sensitized solar cell; a first current acquisition part for acquiring current from at least one dye-sensitized solar cell; a second current acquisition A part, which is used to obtain current from at least one dye-sensitized solar cell, the dye-sensitized solar cell has: a first electrode, which has a transparent substrate, and a transparent conductive film arranged on the transparent substrate; The first electrode faces, and has a metal substrate; an oxide semiconductor layer, which is provided on the first electrode or the second electrode; and a ring-shaped sealing part, which connects the first electrode and the second electrode to obtain the first current. a transparent conductive film of a dye-sensitized solar cell in at least one dye-sensitized solar cell, a second current acquisition part and a metal of a second electrode of a dye-sensitized solar cell in at least one dye-sensitized solar cell The substrates are electrically connected, and the first current acquisition part and the second current acquisition part are arranged adjacent to each other.

A thin film solar cell having a transparent electrode with minute surface irregularities with low surface roughness and for which an an-plane resistance that is approximately uniform can be obtained by forming on a transparent insulating substrate (1) multiple first transparent conductive films (2) that are separated from each other within the substrate plane, forming a second transparent conductive film on the first transparent conductive film (2), forming first granular bodies (4a) dispersed on the first transparent conductive film (2) by etching the second transparent conductive film into a granule form, forming a power generating layer (5) on the first transparent conductive film (2) and on the dispersed first granular bodies (4a), and forming a back electrode layer (6) on the power generating layer (5).

The present invention relates to a solar cell, a method for manufacturing the solar cell, and a solar cell module. The solar cell includes: a semiconductor substrate of the first conductivity type having an impurity diffusion layer in which an impurity element of the second conductivity type is diffused on one side; A passivation film composed of a film; an anti-reflection film formed on a passivation film made of a light-transmitting material having a refractive index different from the above-mentioned oxide film; electrically connected to the impurity diffusion layer and formed on one side of the semiconductor substrate The formed light-receiving side electrode; and the back-side electrode formed on the other side of the above-mentioned semiconductor substrate, and the impurity diffusion layer includes: a first impurity diffusion layer that is a light-receiving region and contains an impurity element at a first concentration; and a light-receiving region. The lower region of the surface side electrode contains a second impurity diffusion layer with an impurity element at a second concentration higher than the first concentration, the surfaces of the first impurity diffusion layer and the second impurity diffusion layer are formed in a uniform surface state, and the second impurity diffusion layer The film thickness of the passivation film on the diffusion layer is thinner than the film thickness of the passivation film on the first impurity diffusion layer.

The invention belongs to the inorganic semiconductor nanomaterial technology and device application field, and especially relates to a MnWO4 nano-plate photosensitive field-effect transistor and a manufacturing method thereof. The MnWO4 nano-plate photosensitive field-effect transistor comprises a grid metal electrode, Si substrate and a SiO2 insulation layer in sequence from the bottom up. The upper surface of the SiO2 insulation layer is provided with a single MnWO4 nano-plate, a source metal electrode and a drain metal electrode. The source metal electrode and the drain metal electrode arecovered on the two ends of the single MnWO4 nano-plate respectively and form ohmic contact. The method produces the MnWO4 nano-plate having large area, high yield and excellent crystal quality througha micro-arc oxidation method; and furthermore, the MnWO4 nano-plate is utilized to prepare the MnWO4 nano-plate photosensitive field-effect transistor in a back-gate structure. The method is simple in process, is low in cost, can grow the MnWO4 nano-plate material having high crystal quality on a large scale, and facilitates industrial promotion.

The present invention provides a method of manufacturing a photoelectric conversion device for forming a semiconductor layer on a substrate by the plasma CVD method. The method includes a first plasma processing step in which a processing temperature reaches a first temperature; a second plasma processing step in which the processing temperature reaches a second temperature; a temperature regulating step of lowering the processing temperature to a third temperature lower than the first temperature and the second temperature after the first plasma processing step and before the second plasma processing step; and a temperature raising step of raising the processing temperature from the third temperature to the second temperature. The first plasma processing step, the temperature regulating step, the temperature raising step, and the second plasma processing step are carried out within the same reaction chamber.

The invention discloses a thieno[2,3-f]benzofuran compound and its polymer and the application of the polymer. The thieno[2,3-f]benzofuran compound is combined with benzothiadiazole, benzofuran Monomers such as triazole and benzoxadiazole synthesized a series of polymers with thieno[2,3-f]benzofuran compound unit structure through Stille coupling polymerization method, the thermal stability and electrical stability of the polymers With good chemical properties, it can be mixed with commonly used fullerene and organic acceptor substances to prepare polymer solar cells with high photoelectric conversion efficiency. The photoelectric conversion efficiency of single-layer polymer solar cell devices is as high as 6.4%. The polymer material is used in solar cells There are huge commercial prospects in the application of .

An indenoperylene derivative represented by a formula (A-1), wherein in the formula (A-1), at least one of R 1 to R 16 is an amino group represented by the formula (A-2). In the formula (A-2), R a and R b are a substituted or unsubstituted aryl group having 6 to 40 ring carbon atoms or a substituted or unsubstituted alkyl group having 1 to 40 carbon atoms.