Photoelectric conversion device and method for manufacturing same

Abstract

A photoelectric conversion device and a method for manufacturing the same are provided. The photoelectric conversion device includes a first semiconductor layer including a first impurity element over a substrate, a second semiconductor layer including an amorphous layer and a crystal over the first semiconductor layer, and a third semiconductor layer including a second impurity element over the second semiconductor layer. The crystal penetrates between the first semiconductor layer and the third semiconductor layer.

Description

technical field [0001] The invention relates to a photoelectric conversion device with a semiconductor junction and a method for manufacturing the photoelectric conversion device. Background technique [0002] In response to global environmental problems in recent years, the market for photoelectric conversion devices represented by solar cells such as photovoltaic power generation systems for residential use has been expanding. Bulk photoelectric conversion devices using single crystal silicon or polycrystalline silicon with high photoelectric conversion efficiency have already been put into practical use. A photoelectric conversion device using single crystal silicon or polycrystalline silicon is manufactured by dividing from a large silicon ingot. However, it takes a long time to manufacture a large silicon ingot, so its productivity is not high. Furthermore, since the supply of silicon raw material itself is limited, it cannot cope with the expansion of the market, and...

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Problems solved by technology

Therefore, there is a problem that the productivity of a photoelectric conversion device using microcrystalline silicon is lower than that of a photoelectric conversion device using amorphous silicon.

[0011] In the aforementioned Patent Document 1, crystalline silicon (microcrystalline silicon is exemplified) with uniform crystallinity and film properties is formed by controlling the pulse modulation of the high-frequency plasma CVD method. However, compared with the production of amorphous silicon, film formation Slow, so not practical

In addition, in the above-mentioned Patent Document 2, an increase in the film formation rate is sought, but a silicon layer whose thickness is several digits higher than that of amorphous silicon is required, and the problem of productivity cannot be solved.

Therefore, at present, the improvement of characteristics such as high efficiency and the improvement of productivity cannot be achieved at the same time, and the penetration rate of photoelectric conversion devices using silicon thin films cannot reach that of bulk photoelectric conversion devices.

[0012] In addition, in the method of bonding a single crystal silicon substrate and other substrates using the paste for electrode formation as an adhesive as in the above-mentioned Patent Document 3, the degree of adhesion of the adhesive part and the electrode formation as an adhesive Deterioration of paste (decrease in adhesive strength) is a problem, and there is concern about the reliability of the completed solar cell

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