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Chemical sensor simultaneously having light sensitivity and gas sensitivity

A chemical sensor and gas-sensing technology, applied in the direction of electrochemical variables of materials, can solve the problem of not having the ability to change and detect ambient light conditions, and achieve the effects of excellent photoelectric conversion characteristics, simple preparation process, and low preparation cost

Inactive Publication Date: 2018-03-16
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these above-mentioned materials and technical methods have only improved the semiconductor material to a certain extent for H 2 , NO 2 , NH 3 The sensitivity of gas and other gases does not have the ability to detect changes in ambient lighting conditions. In many applications, changes in gas composition and concentration are accompanied by changes in ambient lighting conditions.

Method used

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  • Chemical sensor simultaneously having light sensitivity and gas sensitivity

Examples

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Effect test

Embodiment 1

[0043] The chemical sensor with both photosensitive and gas-sensitive properties prepared by the present invention is composed of four parts: the sensitive layer of the chemical sensor, the planar Au-plated ceramic substrate, the lead wire and the base of the gas sensor. The sensitive layer of the chemical sensor for CH 3 NH 3 PB 3 Perovskite Precursor and WO 3 Thin film layer obtained by doping with nanopowder. There is a heating layer of special material and Au-plated electrodes on the planar ceramic sheet. The lead wire is Pt wire, which is welded to the four pins of the ceramic sheet. Finally, the Pt wire on the ceramic sheet is welded to the base by a spot welder.

[0044] The chemical sensor prepared by the present invention has both light-sensitive and gas-sensitive properties, and the film thickness of the sensitive layer of the chemical sensor is 50um.

[0045] The preparation method of the above-mentioned chemical sensor having both photosensitive properties and ...

Embodiment 2

[0058] The chemical sensor with both photosensitive and gas-sensitive properties prepared by the present invention is composed of four parts: the sensitive layer of the chemical sensor, the planar Au-plated ceramic substrate, the lead wire and the base of the gas sensor. The sensitive layer of the chemical sensor It is a film layer obtained by doping CH3NH3PbI3 perovskite precursor solution and WO3 nanometer powder. There is a heating layer of special material and Au-plated electrodes on the planar ceramic sheet. The lead wire is Pt wire, which is welded to the four pins of the ceramic sheet. Finally, the Pt wire on the ceramic sheet is welded to the base by a spot welder.

[0059] The chemical sensor prepared by the present invention has both light-sensitive and gas-sensitive properties, and the film thickness of the sensitive layer of the chemical sensor is 100um.

[0060] The preparation method of the above-mentioned chemical sensor having both photosensitive properties and...

Embodiment 3

[0073] The chemical sensor with both photosensitive and gas-sensitive properties prepared by the present invention is composed of four parts: the sensitive layer of the chemical sensor, the planar Au-plated ceramic substrate, the lead wire and the base of the gas sensor. The sensitive layer of the chemical sensor for CH 3 NH 3 PB 3 Perovskite Precursor and WO 3 Thin film layer obtained by doping with nanopowder. There is a heating layer of special material and Au-plated electrodes on the planar ceramic sheet. The lead wire is Pt wire, which is welded to the four pins of the ceramic sheet. Finally, the Pt wire on the ceramic sheet is welded to the base by a spot welder.

[0074] The chemical sensor prepared by the present invention has both light-sensitive and gas-sensitive properties, and the film thickness of the sensitive layer of the chemical sensor is 100um.

[0075] The preparation method of the above-mentioned chemical sensor having both photosensitive properties and...

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Abstract

The present invention provides a chemical sensor simultaneously having light sensitivity and gas sensitivity, and relates to a semiconductor device specially adapted for various gases and illuminationdetection. The chemical sensor comprises the sensitive layer of a chemical sensor, a planar Au plating ceramic substrate, a leading wire and a gas sensor base, wherein the sensitive layer of the chemical sensor is a thin film layer obtained by doping a CH3NH3PbI3 perovskite precursor liquid and WO3 nanometer powder, and a heating layer made of a special material and a Au plating electrode are arranged on the planar ceramic sheet. According to the present invention, by preparing the CH3NH3PbI3 perovskite precursor liquid and WO3 nanometer powder mixing chemical sensor, the gas sensitivity of the sensor is improved, the sensitivity to gases is improved, the chemical sensor has good sensitivity to light, and the resistance of the sensor is reduced in the case of strong illumination so as toimprove the sensitivity to gases.

Description

[0001] The technical solution of the invention relates to the preparation of a chemical sensor specially adapted to the monitoring of light intensity and gas, specifically, a chemical sensor obtained by mixing organic-inorganic metal halide perovskites and tungsten trioxide. Background technique [0002] The adsorption of gas has a great modification effect on the carrier concentration of semiconductor materials, resulting in changes in the resistivity and conductivity of semiconductor materials. Therefore, gas chemical sensors prepared according to the influence of different concentrations and compositions on the conductivity of specific semiconductor materials are widely used in various industrial and domestic applications such as hazardous gas detection, atmospheric protection, fire source and smoke detection, and have generated important economic and social benefits. [0003] The core device of the current main gas chemical sensor is mainly made of tungsten oxide (molecula...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/26
CPCG01N27/26
Inventor 金慧娇田汉民花中秋曾艳李彦戎小莹张天
Owner HEBEI UNIV OF TECH
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