Method of manufacturing semiconductor device

A manufacturing method and semiconductor technology, which can be used in the manufacture of semiconductor/solid-state devices, semiconductor devices, transistors, etc., and can solve problems such as aggravating the increase of defect rate and the decrease of reliability.
CN1542947AInactive Publication Date: 2004-11-03RENESAS TECH CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
RENESAS TECH CORP
Publication Date
2004-11-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

A method of manufacturing a semiconductor device includes the steps of: forming first and second active areas at a main surface of a silicon substrate; forming a first thermal oxide film on the main surface of the silicon substrate; selectively removing a prescribed portion of the first thermal oxide film to expose the second active area; forming a second thermal oxide film on the first and second active areas; performing an annealing process on the first and second thermal oxide films at or above a temperature for forming the second thermal oxide film; and forming first and second gate electrodes on the first and second active areas such that the first and second thermal oxide films undergoing the annealing process lie between them. Consequently, a method of manufacturing a semiconductor device wherein residual stress inside a semiconductor substrate is reduced is provided.
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Description

Technical field

[0001] The present invention relates to a method of manufacturing a semiconductor device, and more specifically, to a method of manufacturing a semiconductor device having a double gate insulating film structure. Background technique

[0002] In recent years, semiconductor devices having electric field effect transistors including gate insulating films of different thicknesses on the same semiconductor substrate have gradually become commonplace. This structure is generally called a double gate insulating film structure, which is a structure suitable for mixing electric field effect transistors with different driving voltages on the same semiconductor substrate.

[0003] As documents related to a method of manufacturing a semiconductor device having this double gate insulating film structure, there are Japanese Patent Laid-Open No. 2000-243856 and Japanese Patent Laid-Open No. 2002-246480.

[0004] Among them, the method for manufacturing a semiconductor device ha...

Claims

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