Method of manufacturing semiconductor device

A manufacturing method and semiconductor technology, which can be used in the manufacture of semiconductor/solid-state devices, semiconductor devices, transistors, etc., and can solve problems such as aggravating the increase of defect rate and the decrease of reliability.

Inactive Publication Date: 2004-11-03
RENESAS TECH CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For this reason, the increase in the defect rate and the decrease in reliability are exacerbated

Method used

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  • Method of manufacturing semiconductor device
  • Method of manufacturing semiconductor device
  • Method of manufacturing semiconductor device

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Embodiment Construction

[0020] The method of manufacturing a semiconductor device in an embodiment of the present invention will be described in detail with reference to the drawings and divided into individual steps. Furthermore, the semiconductor device manufacturing method in the embodiment of the present invention is an example of forming field effect transistors in an array on the main surface of a semiconductor substrate.

[0021] Such as figure 1 As shown, first, as a first step, a trench isolation film 2 is formed in a silicon substrate 1 as a semiconductor substrate to form a first active region 10 and a second active region 20. Here, the first active region 10 is a first electric field effect transistor 12 (refer to Figure 6 )Area. In addition, the second active region 20 is an electric field effect transistor 22 (refer to Figure 6 )Area.

[0022] As the first step, a normal STI structure manufacturing process can be adopted. Specifically, first, a pad oxide film is formed vertically above t...

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Abstract

A method of manufacturing a semiconductor device includes the steps of: forming first and second active areas at a main surface of a silicon substrate; forming a first thermal oxide film on the main surface of the silicon substrate; selectively removing a prescribed portion of the first thermal oxide film to expose the second active area; forming a second thermal oxide film on the first and second active areas; performing an annealing process on the first and second thermal oxide films at or above a temperature for forming the second thermal oxide film; and forming first and second gate electrodes on the first and second active areas such that the first and second thermal oxide films undergoing the annealing process lie between them. Consequently, a method of manufacturing a semiconductor device wherein residual stress inside a semiconductor substrate is reduced is provided.

Description

Technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more specifically, to a method of manufacturing a semiconductor device having a double gate insulating film structure. Background technique [0002] In recent years, semiconductor devices having electric field effect transistors including gate insulating films of different thicknesses on the same semiconductor substrate have gradually become commonplace. This structure is generally called a double gate insulating film structure, which is a structure suitable for mixing electric field effect transistors with different driving voltages on the same semiconductor substrate. [0003] As documents related to a method of manufacturing a semiconductor device having this double gate insulating film structure, there are Japanese Patent Laid-Open No. 2000-243856 and Japanese Patent Laid-Open No. 2002-246480. [0004] Among them, the method for manufacturing a semiconductor device ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/092H01L21/316H01L21/335H01L21/8234H01L21/8238H01L29/78
CPCH01L21/823857H01L29/78H01L21/823462A47K11/12
Inventor 大野多喜夫
Owner RENESAS TECH CORP
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