Production method for semiconductor device, production device for semiconductor device, and storage medium

Abstract

Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate having a silicon-containing film formed thereon into a process chamber; (b) supplying a gas into the process chamber from a gas supply unit until an inner pressure of the process chamber is equal to or greater than atmospheric pressure; and (c) supplying a process liquid from a process liquid supply unit to the substrate to oxidize the silicon-containing film.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor device, a device for manufacturing a semiconductor device, and a recording medium. Background technique [0002] With the miniaturization of semiconductor devices such as large scale integrated circuits (hereinafter referred to as LSI), technical difficulties in processing technologies for controlling leakage current interference between transistor elements have gradually increased. Generally, LSI element-to-element isolation is performed by forming a space such as a groove or a hole between elements to be separated on a substrate such as a silicon substrate made of silicon (Si), and depositing insulating material in the space. things. As the insulator, an oxide film is often used. As the oxide film, for example, a silicon oxide film can be used. The silicon oxide film is formed on the substrate by natural oxidation of the silicon substrate itself or by chemical vapor deposi...

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Problems solved by technology

However, silicon materials such as polysilazane are known to contain nitrogen as an impurity due to ammonia

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