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Manufacturing method for integrated schottky diode

A technology of Schottky diode and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low breakdown voltage of integrated Schottky diode, uneven guard ring, poor uniformity, etc. The protection ring is uniform, the interface layer is easy to repair, and the effect of high breakdown voltage

Active Publication Date: 2009-04-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0010] Schottky diodes produced by this method are as figure 2 As shown, the oxide layer above the Schottky diode guard ring is an atmospheric pressure chemical vapor deposition oxide film (screen oxide APM), because the atmospheric pressure chemical vapor deposition oxide film (screen oxide APM) has poor uniformity in the silicon wafer, which will lead to P The protection ring of the integrated Schottky tube formed during the source-drain injection is not uniform, and the film quality of the atmospheric pressure chemical vapor deposition oxide film (screen oxide APM) on the surface of the silicide is poor, which will also cause the breakdown voltage of the integrated Schottky tube Low

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  • Manufacturing method for integrated schottky diode
  • Manufacturing method for integrated schottky diode
  • Manufacturing method for integrated schottky diode

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Embodiment Construction

[0034] An embodiment of the integrated Schottky diode manufacturing method of the present invention is as follows image 3 shown, including the following steps:

[0035] (1) Low-pressure chemical vapor deposition oxide film (LPTEOS) after the low-doped drain sidewall (LDD) is formed;

[0036] (2) N-type source-drain (NSD) lithography and implantation;

[0037] (3) LPTEOS dry etching;

[0038] (4) P-type source-drain (PSD) lithography and implantation;

[0039] (5) LPTEOS dry etching;

[0040] (6) Source-drain (SD) nitrogen propulsion; growth of 100-200 angstrom thermal oxide layer;

[0041] (7) 500 Angstrom LPTEOS deposition, silicide layer (SB) photolithography, etching, titanium sputtering, silicide (silicide) formation;

[0042] (8) LPTEOS deposition, borophosphosilicate glass deposition (BPSG), chemical mechanical polishing (CMP), plasma enhanced chemical phase deposition oxide film (PETEOS) deposition, contact hole (CT) lithography and etching.

[0043] The differen...

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Abstract

The invention discloses a manufacturing method of an integrated Schottky diode. A lightly doped drain side wall is formed and subject to low-pressure chemical vapor deposition, dry etching of the oxide film dry etching is performed after photoetching and implantation of N type source / drain and P type source / drain; and a thin thermal oxide layer is grown at the later stage of propelling source / drain nitrogen. The method helps greatly improve the uniformity of breakdown voltage of the Schottky diode without changing the existing process sequence and adding a heating process.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, relates to a semiconductor device manufacturing process, in particular to a method for manufacturing an integrated Schottky diode. Background technique [0002] Schottky diodes are often integrated in IC integration processes because of their on-state voltage drop, high current, low power consumption, and extremely short reverse recovery time. For example, use its on-state voltage drop characteristics to clamp the bipolar transistor to prevent it from entering the deep saturation region to improve the frequency response of the circuit, or use its on-state voltage drop, high current, and low power consumption characteristics for output rectification to improve The drive capability of the circuit. However, due to the complex process of the integrated Schottky diode, there are many factors affected, so it is very difficult to make the electrical parameters uniform in the silicon wafer. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/82
Inventor 马清杰康志潇金勤海
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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