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Film deposition apparatus

A film-forming device and film-forming technology, applied in gaseous chemical plating, coating, metal material coating process, etc., can solve problems such as undocumented problems and their solutions.

Active Publication Date: 2015-07-29
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In Japanese Patent Application Laid-Open No. 2011-100956, there is no description of the problem and its solution

Method used

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  • Film deposition apparatus
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Embodiment Construction

[0022] while referring to Figure 1 ~ Figure 3 A film forming apparatus 1 for performing an ALD process on a wafer W serving as a substrate, which is a film forming apparatus according to an embodiment of the present invention, will be described. figure 1 is a longitudinal sectional side view of the film forming apparatus 1, figure 2 is a schematic perspective view showing the inside of the film forming apparatus 1, image 3 It is a cross-sectional plan view of the film forming apparatus 1 . The film forming apparatus 1 includes a substantially circular flat vacuum container (processing container) 11 , and a disk-shaped horizontal turntable 2 installed in the vacuum container 11 . The vacuum vessel 11 is constituted by a top plate 12 and a vessel main body 13 which forms side walls and a bottom of the vacuum vessel 11 . like figure 1 As shown in , a cover 14 for closing the lower central portion of the container main body 13 is provided.

[0023] The turntable 2 is con...

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PUM

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Abstract

A film deposition apparatus includes a vacuum chamber, and a turntable having a substrate receiving area provided in the vacuum chamber. A heating unit is provided to heat the turntable so as to heat the substrate up to 600 degrees C. or higher. A process gas supply part is provided to supply a process gas having a decomposition temperature of 520 degrees C. or lower under 1 atmospheric pressure or lower, to the substrate. A gas shower head is provided in the process gas supply part and has a plurality of gas discharge holes provided in an opposed part facing a passing area of the substrate placed on the turntable. A cooling mechanism is provided in the process gas supply part and is configured to cool the opposed part in the gas shower head up to a temperature lower than the decomposition temperature of the process gas.

Description

technical field [0001] The present invention relates to a film forming apparatus for supplying processing gas to a substrate to obtain a thin film. Background technique [0002] As a silicon oxide (SiO 2 ) and the like, there is known a film-forming apparatus that performs, for example, ALD (Atomic Layer Deposition: Atomic Layer Deposition). In this film forming apparatus, a horizontal turntable is provided in a processing container whose interior is a vacuum atmosphere, and a plurality of recesses for accommodating wafers are provided along a circumferential direction of the turntable on the turntable. In addition, a plurality of gas nozzles are arranged to face the turntable. As the gas nozzles, reactive gas nozzles for supplying a processing gas (reactive gas) to form a processing atmosphere and separation gas nozzles for supplying a separation gas for separating each processing atmosphere on the turntable are arranged alternately. One of the reaction gas nozzles suppl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/458C23C16/46
CPCC23C16/463C23C16/24C23C16/4584C23C16/45565C23C16/402C23C16/4405C23C16/45551
Inventor 小野裕司立花光博本间学
Owner TOKYO ELECTRON LTD
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