Film deposition apparatus

A film-forming device and film-forming technology, applied in gaseous chemical plating, coating, metal material coating process, etc., can solve problems such as undocumented problems and their solutions.

Active Publication Date: 2015-07-29
TOKYO ELECTRON LTD
View PDF9 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In Japanese Patent Application Laid-Open No. 2011-100956, there is no description of the problem and its solution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Film deposition apparatus
  • Film deposition apparatus
  • Film deposition apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] while referring to Figure 1 ~ Figure 3 A film forming apparatus 1 for performing an ALD process on a wafer W serving as a substrate, which is a film forming apparatus according to an embodiment of the present invention, will be described. figure 1 is a longitudinal sectional side view of the film forming apparatus 1, figure 2 is a schematic perspective view showing the inside of the film forming apparatus 1, image 3 It is a cross-sectional plan view of the film forming apparatus 1 . The film forming apparatus 1 includes a substantially circular flat vacuum container (processing container) 11 , and a disk-shaped horizontal turntable 2 installed in the vacuum container 11 . The vacuum vessel 11 is constituted by a top plate 12 and a vessel main body 13 which forms side walls and a bottom of the vacuum vessel 11 . like figure 1 As shown in , a cover 14 for closing the lower central portion of the container main body 13 is provided.

[0023] The turntable 2 is con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A film deposition apparatus includes a vacuum chamber, and a turntable having a substrate receiving area provided in the vacuum chamber. A heating unit is provided to heat the turntable so as to heat the substrate up to 600 degrees C. or higher. A process gas supply part is provided to supply a process gas having a decomposition temperature of 520 degrees C. or lower under 1 atmospheric pressure or lower, to the substrate. A gas shower head is provided in the process gas supply part and has a plurality of gas discharge holes provided in an opposed part facing a passing area of the substrate placed on the turntable. A cooling mechanism is provided in the process gas supply part and is configured to cool the opposed part in the gas shower head up to a temperature lower than the decomposition temperature of the process gas.

Description

technical field [0001] The present invention relates to a film forming apparatus for supplying processing gas to a substrate to obtain a thin film. Background technique [0002] As a silicon oxide (SiO 2 ) and the like, there is known a film-forming apparatus that performs, for example, ALD (Atomic Layer Deposition: Atomic Layer Deposition). In this film forming apparatus, a horizontal turntable is provided in a processing container whose interior is a vacuum atmosphere, and a plurality of recesses for accommodating wafers are provided along a circumferential direction of the turntable on the turntable. In addition, a plurality of gas nozzles are arranged to face the turntable. As the gas nozzles, reactive gas nozzles for supplying a processing gas (reactive gas) to form a processing atmosphere and separation gas nozzles for supplying a separation gas for separating each processing atmosphere on the turntable are arranged alternately. One of the reaction gas nozzles suppl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/458C23C16/46
CPCC23C16/463C23C16/24C23C16/4584C23C16/45565C23C16/402C23C16/4405C23C16/45551
Inventor 小野裕司立花光博本间学
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap