Sputtering target and process for producing the same

A manufacturing method and sputtering target technology, which can be used in sputtering coating, optical record carrier manufacturing, recording/reproducing by optical methods, etc., and can solve problems such as limitation of optical properties, limitation of composition and so on

Active Publication Date: 2008-05-28
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the condition of the solid solution of the added elements, the composition of the ingredients is limited, so there is a problem that the optical properties are also limited

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Prepare ZnO powder equivalent to 4N of 5 μm or less and Al equivalent to 4N with an average particle size of 5 μm or less 2 o 3 powder and MgO powder equivalent to 4N with an average particle size of 5 μm or less. Then, ZnO powder and Al 2 o 3 The powders were prepared according to the proportion shown in Table 1, and after they were mixed, they were calcined at a temperature of 1000° C. to obtain AZO powders.

[0047] The AZO powder and the MgO powder were mixed according to the ratio in Table 1, and further calcined at a temperature of 1000°C. The calcined powder is finely pulverized by a ball mill or the like to an average particle diameter of 1 μm or less, and then granulated to improve formability. The powder material after the granulation is at 500kgf / cm 2 Formed under high pressure.

[0048] After press forming, it is sintered under atmospheric pressure at 1400°C in an oxygen atmosphere. This sintered body is finished into a target shape by machining.

[...

Embodiment 2

[0056] Prepare ZnO powder equivalent to 4N of 5 μm or less and Al equivalent to 4N with an average particle size of 5 μm or less 2 o 3 Powder, SiO equivalent to 4N with an average particle size of 5 μm or less 2 powder and MgO powder. First, ZnO powder and Al 2 o 3 The powders were prepared according to the proportion shown in Table 1, and after they were mixed, they were calcined at a temperature of 1000° C. to obtain AZO powders.

[0057] On the other hand, MgO powder corresponding to 4N with an average particle diameter of 5 μm or less and SiO powder with an average particle diameter of 5 μm or less equivalent to 4N 2 Powders were prepared at the ratios shown in Table 1, mixed in the same manner, and then calcined at a temperature of 1000°C.

[0058] Then, the AZO powder was mixed with MgO powder and SiO 2 The calcined powder of the powder is further mixed and calcined again. The obtained calcined powder is finely pulverized with a ball mill or the like to an average...

Embodiment 3

[0065] Prepare ZnO powder equivalent to 4N of 5 μm or less and Al equivalent to 4N with an average particle size of 5 μm or less 2 o 3 powder and MgO powder equivalent to 4N with an average particle size of 5 μm or less. Then, ZnO powder and Al 2 o 3 The powders were prepared according to the proportion shown in Table 1, and after they were mixed, they were calcined at a temperature of 1000° C. to obtain AZO powders.

[0066] The AZO powder and the MgO powder were mixed according to the ratio in Table 1, and further calcined at a temperature of 1000°C. The calcined powder is finely pulverized by a ball mill or the like to an average particle diameter of 1 μm or less, and then granulated to improve formability. The powder material after the granulation is at 500kgf / cm 2 Formed under high pressure.

[0067] After press forming, it is sintered under atmospheric pressure at 1400°C in an oxygen atmosphere. This sintered body is finished into a target shape by machining.

[...

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Abstract

A sputtering target, which contains Al2O3: 0.2 to 3.0 atomic%, MgO and / or SiO2: 1 to 27 atomic%, and the balance is ZnO, which has low refractive index and low volume resistance. A method for manufacturing a sputtering target, the sputtering target has low refractive index and low volume resistance, wherein the raw material Al2O3 powder and ZnO powder are pre-mixed and pre-calcined, and then the calcined Al2O3-ZnO mixed powder Mix MgO and / or SiO2 powder in and sinter. The present invention provides a target for forming an optical thin film that does not contain sulfur, has low volume resistance, can realize DC sputtering, and has a low refractive index, and a manufacturing method thereof. Since it has a high transmittance and is composed of a non-sulfide system, it is useful for the formation of a thin film for an optical information recording medium that is less prone to degradation of the adjacent reflective layer and recording layer. Improvement in the characteristics of the optical information recording medium, reduction in equipment cost, and significant improvement in throughput through an increase in film formation speed can be achieved.

Description

technical field [0001] The present invention relates to a sputtering target for thin film formation that does not contain sulfur, has low volume resistance, can perform DC sputtering, and has a low refractive index, and a manufacturing method thereof. Background technique [0002] In the past, ZnS-SiO was mainly used for the protective layer of phase-change optical information recording media. 2 , has excellent characteristics in terms of optical properties, thermal properties, and adhesion to the recording layer, and is being widely used. [0003] However, the rewritable DVD represented by Blu-ray is strongly required to further increase the number of times of rewriting, increase the capacity and record at a high speed. [0004] As one of the reasons for the deterioration of the number of rewrite times of the optical information recording medium, it can be cited that the sulfur component is changed from ZnS-SiO 2 Protective layer ZnS-SiO 2 The recording layer material is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34G11B7/257C04B35/453G11B7/26G11B7/254G11B7/24
CPCC04B2235/3418G11B2007/25706C04B2235/5445G11B7/266C04B2235/3206C04B35/453C04B2235/3284C04B2235/9653C04B2235/3217C23C14/3414G11B2007/2571C04B35/62645C04B2235/77G11B2007/25708C04B2235/604G11B7/2578G11B2007/25715C04B35/62685C04B2235/5436C04B35/6262C04B2235/726
Inventor 中村笃志矢作政隆佐藤贤次
Owner JX NIPPON MINING & METALS CO LTD
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