Film deposition apparatus

A film-forming device and film-forming technology, which are used in gaseous chemical plating, coatings, electrical components, etc., can solve problems such as the inability to suppress the mixing of the first and second reaction gases, the inability to solve problems, and the inability to achieve sufficient treatment. Long time, high film forming speed and good film quality

Active Publication Date: 2011-07-27
TOKYO ELECTRON LTD
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  • Abstract
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Problems solved by technology

[0015] Therefore, the following problems of the present invention cannot be solved by the techniques of the above-mentioned Patent Document 3 to Patent Document 6.
That is, with the technologies of Patent Document 3 to Patent Document 6 mentioned above, when the rotation speed of the turntable is increased, the mixing of the first and second reaction gases cannot be suppressed, and the adsorption reaction of the first reaction gas and the second reaction of the second reaction gas cannot be sufficiently performed. Oxidation reaction of reaction gas for good film formation

Method used

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Embodiment Construction

[0039] Such as figure 1 ( image 3 As shown in the cross-sectional view of I-I′ in ), the film forming apparatus according to the embodiment of the present invention includes a flat vacuum container 1 having a substantially circular planar shape (planar view). The film forming apparatus further includes a rotary table 2 disposed in the vacuum container 1 and having a rotation center at the center of the vacuum container 1 . The top plate 11 of the vacuum container 1 can be separated from the container main body 12 . The top plate 11 is pressed against the side of the container main body 12 through a sealing member, such as an O-ring 13, to maintain an airtight state by utilizing the internal decompression state. The driving mechanism lifts the top plate 11 upwards.

[0040] The center portion of the turntable 2 is fixed to a cylindrical core 21 fixed to an upper end of a rotating shaft 22 extending in the vertical direction. The rotating shaft 22 penetrates the bottom sur...

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Abstract

A film deposition apparatus has a vacuum chamber in which a turntable placing plural substrates is rotated, the plural substrates come into contact with plural reaction gases supplied to plural process areas and thin films are deposited on surfaces of the plural substrates, and has plural reaction gas supplying portions for supplying the plural processing gases, a separation gas supplying portion for supplying a separation gas and an evacuation mechanism for ejecting the plural processing gases and the separation gas, wherein the plural process areas includes a first process area for causing a first reaction gas to adsorb on the surfaces of the plural substrates, and a second process area, having an area larger than the first process area, for causing the first reaction gas having adsorbed the surfaces of the plural substrates and a second reaction gas to react, and depositing the films on the surfaces of the plural substrates.

Description

technical field [0001] The present invention relates to a film forming apparatus for forming a thin film on the surface of the substrate by rotating a turntable on which a plurality of substrates are placed in a vacuum chamber and sequentially contacting the substrates with reaction gases supplied to a plurality of different processing regions. . Background technique [0002] In the semiconductor process, the following devices are known as examples of devices that perform vacuum processing such as film formation processing and etching processing on substrates such as semiconductor wafers (hereinafter referred to as "wafers"). In this device, a wafer mounting table is installed along the circumferential direction of the vacuum container, and a plurality of process gas supply units are provided above the mounting table, and a plurality of wafers are mounted on a turntable while making a vacuum process while revolving. The so-called batch type device. This device is used when...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/458H01L21/02
CPCH01L21/68771C23C16/45551C23C16/45538H01L21/68764
Inventor 加藤寿本间学竹内靖
Owner TOKYO ELECTRON LTD
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