Nitride semiconductor light emitting element

Abstract

The invention provides a nitride semiconductor light emitting element wherein emission output deterioration due to film quality deterioration of a nitride semiconductor layer due to lattice mismatch between a substrate and the nitride semiconductor layer is prevented and light traveling to the substrate can be also efficiently used, while permitting the light emitting element to be a vertical type, by using the SiC substrate. A light reflecting layer (2) wherein low refractive index layers (21) and high refractive index layers (22) having different refractive indexes are alternately stacked is directly arranged on the SiC substrate (1). On the light reflecting layer (2), a semiconductor multilayer section (5) wherein a nitride semiconductor layer is stacked to have at least a light emitting layer forming section (3) is arranged on the light reflecting layer (2). On an upper plane side of the semiconductor multilayer section (5), an upper electrode (7) is arranged, and on a rear plane of the SiC substrate (1), a lower electrode (8) is arranged.

Description

technical field [0001] The present invention relates to a semiconductor light emitting element using a nitride semiconductor. More specifically, it relates to a nitride semiconductor luminescence that uses a semiconductor substrate made of SiC as a substrate, provides an electrode on the back surface of the substrate, and can efficiently extract light emitted from a light-emitting layer forming part, thereby improving the external quantum efficiency. element. Background technique [0002] In the conventional semiconductor light-emitting element using a nitride semiconductor, for example, a nitride semiconductor laminate including a buffer layer and a light-emitting layer forming portion is grown on a sapphire substrate, and a part of the semiconductor laminate is etched to make the semiconductor laminate The conductive layer on the lower layer side is exposed, and a lower electrode is provided on the surface of the exposed lower conductive layer, and an upper electrode is p...

AI Technical Summary

Problems solved by technology

Therefore, the manufacturing process becomes very complicated, and contamination generated by etching adheres to the light-emitting surface, the electrode-formed surface, etc., and there are also problems with electrical characteristics such as a decrease in light-emitting output and an increase in the resistance of the electrode connection part.

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