Plasma treatment apparatus

Abstract

The invention provides a plasma treatment apparatus which can reduce an effective inductance of an antenna and restrain a potential difference generated between two ends in a length direction of the antenna to be a small potential difference, thereby restraining a plasma potential to be a low potential and raising uniformity of plasma density distribution in the length direction of the antenna. The antenna (30) which constitutes the plasma treatment apparatus and has a substantially-straight flat shape presents a return conductor structure, i.e., two rectangular conductor plates (31, 32) are disposed in a manner that the two plates are in the same plane, close to and parallel with each other, and provided with a gap (34) therebetween, and one end in the length direction (X) of the two conductor plates are connected by using a conductor (33). High-frequency currents (1R) flow to the two conductor plates (31, 32) in a reverse manner. Opening parts (37) form on an edge at the gap side of the two conductor plates (31, 32) and are dispersedly disposed in the length direction (X) of the antenna (30).

Description

technical field [0001] The present invention relates to a plasma processing apparatus for performing, for example, film formation, etching, and ashing on a substrate by a plasma chemical vapor deposition (CVD) method using plasma. , sputtering (sputtering), etc., and more specifically, the present invention relates to an inductively coupled plasma processing apparatus that uses an induced electric field to generate plasma and uses the plasma to process a substrate , the induced electric field is generated by flowing a high-frequency current into an antenna. Background technique [0002] As a device belonging to a plasma processing device that generates plasma using high frequency, there are capacitively coupled plasma processing devices that generate capacitively coupled plasma (abbreviated as CCP), and inductively coupled plasma processing devices that generate inductively coupled plasma (abbreviated as ICP). Plasma treatment device. [0003] In simple terms, the capaciti...

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Problems solved by technology

[0004] For example, the capacitively coupled plasma processing apparatus has the following problems: when a high voltage is applied to the plasma, the potential of the plasma rises, and charged particles (such as ions) in the plasma are injected into the substrate with high energy and Collision with the substrate increases the damage to the film formed on the substrate and reduces the film quality

As a result, for example, there is a problem that, since charged particles (for example, ions) in the plasma are injected into the substrate with high energy and collide with the substrate, the damage to the film formed on the substrate becomes larger and the film quality deteriorates.

As a result, the uniformity of the plasma density distribution in the length direction of the antenna is deteriorated, and thus the uniformity of the substrate processing is deteriorated

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