Magnesium oxide single crystal and method for producing same

Abstract

The present invention provides a single crystal MgO used to obtain a magnesium oxide (MgO) single crystal vapor deposition material which can prevent splashing without reducing the vapor deposition time when the vapor deposition material is vapor deposited by an electron beam vapor deposition method or the like. and providing a single crystal MgO used to obtain a single crystal MgO substrate capable of forming, for example, a superconductor thin film excellent in superconducting properties. The calcium content of the single crystal MgO is 150×10-6 to 1000×10-6 kg / kg, the silicon content is 10×10-6 kg / kg or less, and the polished surface of the single crystal MgO is analyzed by TOF-SIMS The change in the detected amount of calcium fragment ions was 30% or less in terms of CV value. Also provided are a single crystal MgO vapor deposition material obtained from the single crystal MgO and a single crystal MgO substrate for thin film formation.

Description

technical field [0001] The present invention relates to a single crystal magnesium oxide ( MgO), and single crystal MgO for obtaining a single crystal MgO substrate for forming, for example, an oxide superconductor thin film, and a method for producing the same. Background technique [0002] A PDP utilizing a discharge luminescence phenomenon is being developed as a flat-panel display that can be easily enlarged. In AC-type PDPs whose transparent electrodes are covered with a glass dielectric, a protective film is usually formed on the dielectric in order to prevent surface deterioration of the dielectric and increase in discharge voltage due to ion impact sputtering. The protective film is required to have a low discharge voltage and be excellent in sputtering resistance. [0003] As a protective film satisfying the above requirements, a MgO film has been used conventionally. The MgO film is an insulator with excellent sputtering resistance and a large secondary electron...

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Problems solved by technology

[0012] For the above-mentioned single-crystal MgO substrate for oxide superconductors, a method of obtaining a large-sized single crystal (Patent Document 8, Patent Document 9), a method of obtaining a single crystal with good crystallinity (Patent Document 10), and an improved substrate have been proposed. There are many methods for improving the surface properties (Patent Document 11, Patent Document 12, and Patent Document 13), but there is a problem that a satisfactory oxide superconductor thin film may not be obtained.