Process for production of semiconductor light-emitting element substrate

Abstract

Disclosed is a process for producing a high-performance semiconductor light-emitting element substrate, which has a reduced production time. Specifically disclosed is a process for producing a semiconductor light-emitting element substrate, which is characterized by comprising: a substrate heating step (S3) of heating a substrate; a substrate washing step (S6) of washing the substrate (S); a dielectric material layer formation step (S7) of depositing dielectric material layers (H, L) on the substrate (S); a substrate heating termination step (S8) of terminating the heating of the substrate; a cooling step (S9) of absorbing a radiation heat by means of cooling means (11, 12, 13) to cool the substrate (S) and a substrate supporting means (3); and a reflective layer formation step (S11) of depositing a reflective layer (R) on the dielectric material layers (H, L).

Description

Technical field [0001] The present invention relates to a method for manufacturing a semiconductor light-emitting element substrate, and more particularly to a method for manufacturing a high-performance semiconductor light-emitting element substrate by shortening the manufacturing time. Background technique [0002] Semiconductor light-emitting elements (LEDs) are practically used as light sources because of their low power consumption, long life, and high luminous efficiency. And in the field of semiconductor light-emitting elements, GaN-based compound semiconductors such as GaN, GaAlN, and InGaN are widely used in visible light-emitting devices and high-temperature operation electronic devices. [0003] In the production of GaN-based compound semiconductors, in order to grow a semiconductor film on the surface of a substrate, a sapphire substrate is generally used as a crystal substrate. Since the sapphire substrate is insulating, it is not possible to provide an electrode on t...

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Problems solved by technology

[0022] However, the technique disclosed in Patent Document 2 is a technique aimed at forming a film on a substrate made of a material having a low heat distortion temperature such as plastic by a vacuum evaporation method. More specifically, it is a technique for manufacturing a semiconductor optical element. The technique for forming a high-performance reflective layer is not described

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