Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon crystallization method

A silicon crystallization and crystallization technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve the problems of polysilicon film film quality reduction and low heat treatment temperature, and achieve the effect of improving various characteristics and film quality.

Inactive Publication Date: 2009-06-03
TERASEMICON CO LTD
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, the above-mentioned silicon crystallization method has the advantage that crystallization can be carried out at a low temperature to the extent that it can be produced on a glass substrate. However, since the heat treatment temperature is basically low, there is a problem that the film quality of the produced polysilicon thin film decreases.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon crystallization method
  • Silicon crystallization method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The inventors of the present invention recognized the problem in the silicon crystallization method using the above-mentioned conventional low-temperature crystallization method, and conducted diligent research to solve the problem. In the induced crystallization method, nuclei (nucleation) of silicon crystal grains are generated at the first heat treatment temperature, and after they are grown to complete crystallization, further heat treatment is performed at a temperature higher than the first heat treatment temperature (second heat treatment temperature), Accordingly, polycrystalline silicon having an excellent film quality for removing defects existing in grown silicon crystal grains was produced, thereby completing the present invention. Therefore, the present invention is characterized in that silicon is crystallized by a two-step heat treatment process after introducing a metal catalyst onto amorphous silicon.

[0033] The method for crystallizing silicon accord...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a silicon crystallization method for manufacturing polysilicon with excellent crystallization characteristic. The silicon crystallization method of the invention is characterized in that including (a) a step of allocating metallic catalyst on amorphous silicon, (b) a step of thermal treatment with a first thermal treatment temperature, and (c) a step of thermal treatment with a second thermal treatment temperature, wherein the first thermal treatment temperature is less than the second thermal treatment temperature.

Description

technical field [0001] The present invention relates to a silicon crystallization method for producing polycrystalline silicon thin films. More specifically, the present invention relates to a silicon crystallization method for producing a high-quality polysilicon thin film applicable to thin film transistors (TFTs) used in liquid crystal displays (LCDs), organic light emitting displays (OLEDs), and the like. Background technique [0002] Generally, TFTs are classified into amorphous silicon TFTs and polysilicon TFTs. The characteristics of TFT are evaluated by the value of electron mobility, because the electron mobility of amorphous silicon TFT is about 1cm 2 / Vs, the electron mobility of polysilicon TFT is about 100cm 2 / Vs or so, so high-performance LCD preferably adopts polysilicon TFT. [0003] Polysilicon TFTs are produced by depositing amorphous silicon on a transparent substrate such as glass or quartz to make it polycrystalline, forming a gate oxide film and a g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B28/02
CPCH01L21/02381H01L21/02667H01L21/324
Inventor 张泽龙李炳一张锡弼
Owner TERASEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com