Silicon crystallization method

A silicon crystallization and crystallization technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve the problems of polysilicon film film quality reduction and low heat treatment temperature, and achieve the effect of improving various characteristics and film quality.
CN101445958AInactive Publication Date: 2009-06-03TERASEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TERASEMICON CO LTD
Publication Date
2009-06-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention provides a silicon crystallization method for manufacturing polysilicon with excellent crystallization characteristic. The silicon crystallization method of the invention is characterized in that including (a) a step of allocating metallic catalyst on amorphous silicon, (b) a step of thermal treatment with a first thermal treatment temperature, and (c) a step of thermal treatment with a second thermal treatment temperature, wherein the first thermal treatment temperature is less than the second thermal treatment temperature.
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Description

technical field

[0001] The present invention relates to a silicon crystallization method for producing polycrystalline silicon thin films. More specifically, the present invention relates to a silicon crystallization method for producing a high-quality polysilicon thin film applicable to thin film transistors (TFTs) used in liquid crystal displays (LCDs), organic light emitting displays (OLEDs), and the like. Background technique

[0002] Generally, TFTs are classified into amorphous silicon TFTs and polysilicon TFTs. The characteristics of TFT are evaluated by the value of electron mobility, because the electron mobility of amorphous silicon TFT is about 1cm 2 / Vs, the electron mobility of polysilicon TFT is about 100cm 2 / Vs or so, so high-performance LCD preferably adopts polysilicon TFT.

[0003] Polysilicon TFTs are produced by depositing amorphous silicon on a transparent substrate such as glass or quartz to make it polycrystalline, forming a gate oxide film and a g...

Claims

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