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Conductive Nb2O5-x target material for magnetron sputtering coating and production method thereof

A production method and target material technology, applied in the field of optoelectronic materials, can solve the problems of inefficient direct current magnetron sputtering coating and other problems, and achieve the effects of easier control of the production process, improved production efficiency, and guaranteed uniformity of the film layer

Inactive Publication Date: 2010-10-06
YIXING BAILUN OPTO ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Nb is currently commonly used 2 o 5 The material is manufactured by the target source vacuum evaporation process, due to the Nb 2 o 5 The material itself is a poor conductor of electricity and cannot be coated by the DC magnetron sputtering method with higher production efficiency, so it needs to be improved

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Weigh Nb2O5 powder with a purity of 4N and an average particle diameter of 10 microns as 440 grams of main raw material, and add metal powder Nb powder with a weight ratio of 1% and a fineness of 250 mesh. Add 30% by weight of deionized pure water and 0.5% of triethanolamine to mix, and mix with a ball mill for 18 hours, add 1% of the total weight of polyvinyl alcohol organic binder, and ball mill for another 2 hours, and the slurry is spray-dried and granulated , that is, the target material with an average particle diameter of 100 microns, and a metal mold of 1 ton / CM 2 The green body with a diameter of 150 mm and a relative density greater than 50% is obtained by pressure molding, and the green body is kept in an air furnace at 400 degrees Celsius for 3 hours to remove organic additives, and the temperature is raised to 1450 degrees Celsius for sintering and compacting to obtain a ceramic semiconductor with a relative density of 98.5%. , the conductivity of the sinte...

Embodiment 2

[0025] Weigh 900 grams of Nb2O5 powder with a purity of 4N and an average particle diameter of 10 microns as the main raw material, and add 100 grams of metal powder Nb powder with a fineness of 250 mesh. Add 300 grams of deionized pure water and 5 grams of triethanolamine and mix them with a ball mill for 18 hours, add 10 grams of polyvinyl alcohol organic binder, ball mill for 2 hours, and spray the slurry to dry and granulate to obtain the average Target raw material with a particle size of 100 microns, metal mold 1 ton / CM 2 The green body with a diameter of 150 mm and a relative density greater than 50% is obtained by pressure molding, and the green body is kept in an air furnace at 400 degrees Celsius for 3 hours to remove organic additives, and the temperature is raised to 1450 degrees Celsius for sintering and compacting to obtain a ceramic semiconductor with a relative density of 98.5%. , the electrical conductivity of the sintered body is good, and the resistivity mea...

Embodiment 3

[0027] Weigh 900 grams of Nb2O5 powder with a purity of 4N and an average particle diameter of 10 microns as the main raw material, and add 100 grams of metal powder Nb powder with a fineness of 250 mesh. Add 300 grams of deionized pure water and 5 grams of triethanolamine, mix them with a ball mill for 18 hours, add 10 grams of polyvinyl alcohol organic binder, and ball mill them for 2 hours, and then spray dry and granulate the slurry to obtain the average Target raw material with a particle size of 100 microns, metal mold 1 ton / CM 2 The green body with a diameter of 150 mm and a relative density greater than 50% is obtained by pressure molding, and the green body is kept in an air furnace at 400 degrees Celsius for 3 hours to remove organic additives, and the temperature is raised to 1450 degrees Celsius for sintering and compacting to obtain a ceramic semiconductor with a relative density of 98.5%. , the electrical conductivity of the sintered body is good, and the resisti...

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Abstract

The invention discloses a conductive Nb2O5-x target material for magnetron sputtering coating. The conductive Nb2O5-x target material comprises the following raw material powder in percentage by weight: 80 to 99 percent of ZnO, 0.1 to 10 percent of In2O3 and 0.1 to 10 percent of Ga2O3, wherein the average particle size of the powder is between 0.05 to 50 microns; and the purify of the raw material powder is more than or equal to 4N. The invention also discloses a method for producing the conductive Nb2O5-x target material. A material obtained by the method is an Nb2O5-x target material which has high conductive performance, so that niobium oxide series optical films can be produced by magnetron sputtering, film uniformity during production of the large-area niobium oxide series optical films can be ensured, the production process is easier to control and the production efficiency is improved by 30 to 50 percent compared with that of a conventional alternating current radio-frequency sputtering or vacuum evaporation coating process which takes conventional defective conductor Nb2O5 as a target source.

Description

technical field [0001] The present invention relates to a kind of optoelectronic material, specifically, the present invention is a kind of conductive Nb used for magnetron sputtering coating film 2 o 5-x Target material and production method. Background technique [0002] Currently, Nb 2 o 5 Optical film is a widely used optical functional film, which is widely used in optical lens, optical fiber cable, glasses coating, optical data storage, architectural glass coating, high temperature dielectric film, laser device filter, protective film, spectroscopic film, high reflection film, Insulation film, heat reflective film, cold light film and other fields and products have applications. Nb is commonly used at present 2 o 5 The material is manufactured by the target source vacuum evaporation process, due to the Nb 2 o 5 The material itself is a poor conductor of electricity and cannot be coated by the DC magnetron sputtering method with higher production efficiency, so ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/34C04B35/622C04B35/495
Inventor 孔伟华
Owner YIXING BAILUN OPTO ELECTRONICS MATERIAL
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