Method for sputtering and depositing tin indium oxide transparent electroconductive film on flexible substrate at room temperature

Abstract

The invention relates to a method for preparing the transparent and conductive indium tin oxide thin film through sputtering flexible substrates at room temperature, which belongs to the technology field of electronic material; the method comprises the following steps: cleaning, charging working gas, ultraviolet irradiating, preparing a barrier layer and sputtering an indium tin oxide film; through the on-line ultraviolet irradiation, the argon oxygen ratio is (6.0 to 7.5):0.2, by adopting radio frequency sputtering or direct current sputtering, and at the room temperature, the indium tin oxide thin film can be prepared on the organic flexible substrate coated with a silicon dioxide layer in advance and taken as the diffusion barrier layer efficiently without damage. When the thickness of the indium tin oxide thin film is 700 nm, the electrical resistivity is 3.5*10-4 omega cm, the square resistance is 5 omega, the transmissibility of the visible light is 88 percent, and the film layer is even and smooth, and cannot be crimpled nor fall off. Compared with the preparation process of the traditional flexible indium tin oxide thin film, the method has the advantages that heating is not required, the process control is simple, and no damage is caused to the basal body; the method is suitable for large-area production and has good photoelectric characteristics.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, in particular to a method for preparing a flexible indium tin oxide transparent conductive film by sputtering at room temperature. Background technique [0002] More and more electronic devices are developing towards flexibility and ultra-thinning, and organic flexible substrate indium tin oxide film not only has the same transparent and conductive properties as glass substrate indium tin oxide film, but also because of its curlable, Flexible, light weight, not easy to break, easy to produce in large areas, easy to transport and other unique advantages, are widely used in flat panel display devices, large-area heterojunction thin-film solar cells, large-area transparent electromagnetic shielding, flexible optoelectronic devices and touchscreens. Therefore, the international demand for indium tin oxide films on organic flexible substrates is increasingly urgent. [0003] A variety of...

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Problems solved by technology

[0005] 1. The above-mentioned existing technologies still need to heat the substrate, which will inevitably lead to denaturation and deformation of the substrate and affect the use;

[0006] 2. The process parameters in the preparation are demanding, and the preparation processes such as oxygen partial pressure and sputtering power need to be strictly controlled, otherwise it is difficult to obtain the ideal indium tin oxide film;

[0007] 3. No diffusion barrier layer is set on the organic substrate. Over time, the substrate components will diffuse into the indium tin oxide film, resulting in premature failure due to indium tin oxide doping;

[0008] 4. It is difficult to achieve large-area uniform film formation, and it is also difficult to carry out industrial production

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