Environment-friendly Zn-Sb phase change storage thin-film material and manufacturing method thereof

An environment-friendly, thin-film material technology, applied in the direction of electrical components, etc., can solve the problems of short data storage time, easy phase separation, high melting point temperature, etc., and achieve the effect of solving thermal crosstalk, good CMOS process compatibility, and high crystallization temperature

Inactive Publication Date: 2014-04-30
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these materials still have some disadvantages
For example, the Ga-Sb film has a higher melting point temperature and a smaller resistance ratio between the amorphous and crystalline states, which will result in greater energy consumption and poorer switching ratios.
While Mg-Sb thin films have low crystallization temperature and are prone to phase separation, which will lead to poor thermal stability and short data retention time

Method used

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  • Environment-friendly Zn-Sb phase change storage thin-film material and manufacturing method thereof
  • Environment-friendly Zn-Sb phase change storage thin-film material and manufacturing method thereof
  • Environment-friendly Zn-Sb phase change storage thin-film material and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0035] An environment-friendly Zn-Sb thin film material for phase change memory of the present invention is composed of zinc and antimony two elements to form a binary system, and its general chemical structure is Zn x Sb 100-x (0

[0036] 1. In the magnetron sputtering coating system (JGP-450 type), the antimony or zinc single target is installed in the magnetron direct current (DC) sputtering target, and the ZnSb target is installed in the magnetron radio frequency (RF) sputtering target In the shooting target, a quartz sheet or a silicon oxide sheet is used as the substrate, and the sputtering chamber of the magnetron sputtering coating system is vacuumed until the vacuum degree in the chamber reaches 2.0×10 -4 Pa, then, pass high-purity argon gas with a volume flow rate of 50ml / min (SCCM standard condition milliliter per minute) into the sputtering chamber until the pressure in the sputtering chamber reaches 0.35Pa req...

Embodiment 2

[0039] With the above-mentioned implementation example 1, the difference is that the sputtering power of the elemental antimony target in the thin film preparation process is controlled at 40W, and the sputtering power of the alloy ZnSb target is controlled at 50W, both to obtain Zn 20.3 Sb 79.7 Phase change film materials.

Embodiment 3

[0041] Same as the above implementation example 1, the difference is that the sputtering power of the elemental antimony target in the film preparation process is controlled at 30W, and the sputtering power of the alloy ZnSb target is controlled at 50W, so that Zn 21.9 Sb 78.1 Phase change film materials.

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Abstract

The invention discloses an environment-friendly Zn-Sb phase change storage thin-film material and a manufacturing method of the environment-friendly Zn-Sb phase change storage thin-film material. The environment-friendly Zn-Sb phase change storage thin-film material is characterized in that the chemical structural formula of the material is ZnxSb(100-x), and x is larger than 0 but smaller than 60. The manufacturing method comprises the steps of installing an elemental Sb or Zn target material in a magnetic control direct current sputtering target, installing a ZnSb alloy target material in a magnetic control radio frequency sputtering target, vacuumizing a sputtering chamber until the vacuum degree is 2.0*10<-4>Pa, feeding high-purity argon of 50ml/min into the sputtering chamber until the air pressure reaches 0.35Pa, controlling the sputtering power of the ZnSb alloy target material to be 20-50W, controlling the sputtering power of the elemental Sb or Zn target material to be 0-40W, and obtaining the finished environment-friendly Zn-Sb phase change storage thin-film material after the target materials sputter for 5 minutes at the room temperature. The environment-friendly Zn-Sb phase change storage thin-film material and the manufacturing method of the environment-friendly Zn-Sb phase change storage thin-film material have the advantages that the crystallization temperature is high, the phase change speed is high, the switch ratio is large, data retentivity is good, stability is high, and power consumption is small.

Description

technical field [0001] The invention relates to the technical field of phase change materials, in particular to an environment-friendly Zn-Sb phase change storage film material and a preparation method thereof. Background technique [0002] Phase Change Random Access Memory (PRAM), also known as Ovshinsky Electric Effect Unified Memory, is based on the Ovshinsky Electric Effect memory proposed by American Ovshinsky in the late 1960s. The storage media of this type of memory are many Mainly chalcogenides, which are induced by electric heat or light heat, have a reversible phase transition process from amorphous state to crystalline state, and the accompanying huge resistance or refractive index difference is sufficient to meet the requirements of memory applications. In the research and development of PRAM, the phase change material as a storage medium is the core of pulse code modulation (PCM), and its performance optimization is crucial to improving the performance of PRAM ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00C22C12/00
Inventor 沈祥陈益敏王国祥李军建吕业刚王训四戴世勋徐铁峰聂秋华
Owner NINGBO UNIV
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