The invention discloses a method for reducing the thickness of a tellurium nanosheet, and belongs to the technical field of nano materials, the method comprises the following steps: soaking the tellurium nanosheet in a weak oxidizing solution, taking out and drying to obtain the tellurium nanosheet with the reduced thickness, according to the method, the weak oxidizing solution and the surface of the tellurium nanosheet are subjected to mild oxidation reaction, the tellurium nanosheet is thinned, and accurate regulation and control of the thickness of the tellurium nanosheet can be achieved; according to the thin-layer tellurium nanosheet prepared by the method disclosed by the invention, the advantages of the p-type tellurium nanosheet can be fully played, the requirements of different devices on material performance are met, electronic and photoelectric devices based on the tellurium nanosheet can be constructed by utilizing electron beam exposure and vacuum evaporation of an electrode material, and the thin-layer tellurium nanosheet has good compatibility with a traditional semiconductor processing technology; according to the invention, multiple regulation and control of the thickness, the carrier concentration and the field effect switching ratio of the tellurium nanosheet can be realized, and support is provided for developing a two-dimensional p-type semiconductor material which is stable in performance and meets multi-scene requirements.