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Siliconized graphite and preparation method of siliconized graphite

A technology of siliconized graphite and siliconized graphite, which is applied in the field of siliconized graphite preparation technology, can solve problems such as low efficiency, poor bonding strength, and easy falling off of the siliconized layer, and achieve high density, good acid and alkali resistance, and good mechanical properties. Effect

Inactive Publication Date: 2016-04-27
QINGDAO HUAJIE SILICON CARBON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The silicided graphite silicide layer prepared by chemical vapor deposition (CVD) and chemical vapor reaction (CVR) is thin, and the bonding strength with the graphite substrate is poor, and the silicide layer is easy to fall off, and the efficiency of these two methods is low
The liquid silicon infiltration reaction method can prepare a silicide layer with a thickness of millimeters, but this method has not yet been patented or reported in papers

Method used

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  • Siliconized graphite and preparation method of siliconized graphite

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Such as figure 1 As shown, a silicided graphite has a siliconized graphite layer 1 inside and a silicide layer 2 on its surface.

[0026] The preparation method of described graphite silicide is:

[0027] The graphite boat and graphite base material equipped with silicon source are placed in vacuum siliconization equipment, and the vacuum degree inside the siliconization equipment is 10 -3 Pa, from room temperature to 1200°C, the heating rate is 10°C / min. At this time, the silicon source is converted into silicon liquid, and the graphite base material is put into the silicon liquid with a manipulator. At 1200°C, silicification is carried out at a constant temperature for 6 hours. After the silicide reaction is completed, cool to room temperature to obtain the silicided graphite.

[0028] The ratio by weight of the graphite base material to the silicon liquid is 20:40, the shape of the graphite base material is set as a cylinder, and the purity of the silicon liquid is...

Embodiment 2

[0032] The same part of this embodiment and Embodiment 1 will not be described again, the difference is:

[0033] The graphite boat and graphite base material equipped with silicon source are placed in vacuum siliconization equipment, and the vacuum degree inside the siliconization equipment is 10 -3 Pa, the heating rate is 10°C / min. After the temperature rises from room temperature to 1200°C, put the graphite base material into the silicon liquid with a manipulator, and silicify at a constant temperature for 8 hours at 1200°C. After the silicification reaction is completed, cool to room temperature to obtain The silicided graphite.

[0034] The weight ratio of graphite base material to silicon liquid is 20:40.

[0035] The silicified graphite properties prepared by the method are as follows:

[0036] Silicide layer 2 has a thickness of 0.6mm and a bulk density of 2.38g·cm -3 , hardness 3050Hv, compressive strength 305MPa, flexural strength 155MPa, tensile strength 55MPa, t...

Embodiment 3

[0038] The same part of this embodiment and Embodiment 1 will not be described again, the difference is:

[0039] The graphite boat and graphite base material equipped with silicon source are placed in vacuum siliconization equipment, and the vacuum degree inside the siliconization equipment is 10 -3 Pa, the heating rate is 10°C / min. After the temperature rises from room temperature to 1400°C, put the graphite base material into the silicon liquid with a manipulator, and silicify at a constant temperature for 6 hours at 1400°C. After the silicification reaction is completed, cool to room temperature to obtain The silicided graphite.

[0040] The weight ratio of the graphite base material to the silicon liquid is 20:40, and the shape of the graphite base material is a cone.

[0041] The silicified graphite properties prepared by the method are as follows:

[0042] Silicide layer 2 has a thickness of 0.7mm and a bulk density of 2.39g cm -3 , hardness 3000Hv, compressive stren...

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Abstract

The invention discloses siliconized graphite and a preparation method of the siliconized graphite; the inner part of the siliconized graphite is an ihrigizing graphite layer, and the surface of the siliconized graphite is a siliconizing layer. The siliconized graphite disclosed by the invention has the characteristics of high density, even texture, good electric and thermal conductivity, good heat resistance, good acid-base resistance, high oxidation stability, and good and stable mechanical property. The thickness of the siliconizing layer is 0.5 to 10 mm, and the thickness is controllable; the bonding strength of the siliconizing layer and the ihrigizing graphite layer is high. According to the siliconized graphite and the preparation method disclosed by the invention, siliconizing temperature and siliconizing time can be optimized, the thickness of the siliconizing layer and the ratio of alpha-sic (silicon carbide) and beta-sic can be effectively controlled, and the heat stability of the siliconized graphite is improved.

Description

technical field [0001] The invention relates to the technical field of silicified graphite preparation technology, in particular to a silicified graphite and a preparation method thereof. Background technique [0002] Silicified graphite, as a novel engineering material, embodies the complementarity of graphite and silicon carbide. It not only has the self-lubricating properties of graphite, good electrical and thermal conductivity and thermal shock resistance, but also has the advantages of high hardness, oxidation resistance and chemical corrosion resistance of silicon carbide. The chemical properties of siliconized graphite are very stable, almost resistant to various acid and alkali corrosion, and can work in a high temperature environment above 1200 ° C for a long time, especially suitable for use under severe conditions such as heavy load, high temperature, radiation, corrosion, and large temperature shock. Therefore, siliconized graphite materials are more and more w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50
CPCC04B41/5096
Inventor 孙绍杰孙博孙斌
Owner QINGDAO HUAJIE SILICON CARBON TECH CO LTD
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