Method for reducing thickness of tellurium nanosheet

Abstract

The invention discloses a method for reducing the thickness of a tellurium nanosheet, and belongs to the technical field of nano materials, the method comprises the following steps: soaking the tellurium nanosheet in a weak oxidizing solution, taking out and drying to obtain the tellurium nanosheet with the reduced thickness, according to the method, the weak oxidizing solution and the surface of the tellurium nanosheet are subjected to mild oxidation reaction, the tellurium nanosheet is thinned, and accurate regulation and control of the thickness of the tellurium nanosheet can be achieved; according to the thin-layer tellurium nanosheet prepared by the method disclosed by the invention, the advantages of the p-type tellurium nanosheet can be fully played, the requirements of different devices on material performance are met, electronic and photoelectric devices based on the tellurium nanosheet can be constructed by utilizing electron beam exposure and vacuum evaporation of an electrode material, and the thin-layer tellurium nanosheet has good compatibility with a traditional semiconductor processing technology; according to the invention, multiple regulation and control of the thickness, the carrier concentration and the field effect switching ratio of the tellurium nanosheet can be realized, and support is provided for developing a two-dimensional p-type semiconductor material which is stable in performance and meets multi-scene requirements.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a method for reducing the thickness of tellurium nanosheets. Background technique [0002] For more than half a century, Moore's Law has driven the silicon electronics industry toward smaller and faster transistors. However, the size of the silicon-based CMOS process is getting closer to the Moore limit, and at the same time, the power consumption problem caused by the size reduction is getting more and more serious. The semiconductor industry urgently needs to find new materials and new principle devices to further enhance the next generation of information processing technology. Two-dimensional materials have the advantages of high mobility, adjustable bandgap, large specific surface area, and atomic-level thickness, which can avoid the problems of transistor performance degradation and power consumption increase caused by short-channel effects. It is th...

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Problems solved by technology

However, the effect of this method to thin the sample is poor, and the operation method is complicated

People such as Javey have obtained a thickness-controllable tellurium nanofilm by low-temperature thermal evaporation, but when evaporating a very thin nanofilm (8nm), the impact of impurities, crystal quality and surface roughness becomes very large (Nat. Nanotechnol. 15, 53–58 (2020))

These methods generally have the disadvantages of complicated process and great damage to the surface morphology of samples.

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