Preparation method of ZnS-cladded ZnO nanoarray core-shell structure

A nano-array, core-shell structure technology, applied in sputtering plating, ion implantation plating, final product manufacturing, etc., to achieve the effect of improving transmission capacity, stable deposition rate, and good repeatability

Inactive Publication Date: 2012-11-28
SHANGHAI UNIV
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Problems solved by technology

[0007] No patent records the preparation of ZnOZnS nano-array core-sh...

Method used

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  • Preparation method of ZnS-cladded ZnO nanoarray core-shell structure
  • Preparation method of ZnS-cladded ZnO nanoarray core-shell structure
  • Preparation method of ZnS-cladded ZnO nanoarray core-shell structure

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Embodiment 1

[0027] 1. Cleaning of glass substrate

[0028] Carry out surface cleaning treatment on the FTO conductive glass, put in triton aqueous solution, acetone solution, absolute alcohol solution and deionized water in sequence for 15 minutes, and then dry the FTO substrate.

[0029] 2. Preparation of ZnO seed crystals

[0030] ZnO seeds were prepared by magnetron sputtering. The target material is Al-doped 2 o 3 ZnO target (AZO target), in which ZnO is 98wt%, Al 2 o 3 is 2wt%. The magnetron sputtering condition is: the background vacuum is 5×10 -4 Pa, the working pressure is 0.4Pa, the radio frequency sputtering power is 150W, and the sputtering time is 20min. The seeds were heat-treated in a rapid annealing furnace in N 2 It is carried out in the atmosphere, the temperature is 400°C, and the time is 20 minutes.

[0031] 3. Growth of ZnO nanoarrays

[0032] ZnO nanoarrays were grown by hydrothermal method. The growth solution is an aqueous solution of 0.05mol / L zinc nitra...

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Abstract

The invention relates to a method for preparing ZnO seed crystal by utilizing a magnetron sputtering method, growing a ZnO nanoarray by utilizing a hydrothermal method and growing a ZnS shell structure by utilizing the hydrothermal method through vulcanization. The grown ZnO @ ZnS nanoarray core-shell structure can be used as a window layer of a copper-zinc-tin-sulfur (CZTS) solar cell. The method belongs to the technical field of preparation process of solar cell thin-film devices. The preparation method comprises the following steps of: firstly adopting the magnetron sputtering method for sputtering ZnO seed crystal on fluorine-doped SnO2 conductive glass (FTO), then using a vacuum tube furnace for thermal treatment on the seed crystal in a N2 atmosphere at the temperature of 400 DEG C for 20 minutes, then growing the ZnO nanoarray through the hydrothermal method with the growth solution of 0.05 mol/L zinc nitrate aqueous solution and 0.05 mol/L methenamine (HMT) aqueous solution, and finally, growing the ZnS shell structure by utilizing the hydrothermal method through vulcanization with the growth solution of 0.05-0.50 mol/L thioacetamide (TAA) aqueous solution, vulcanizing for 1-9 hours in a hydrothermal reaction kettle and taking out, and then putting into a drying oven for drying to obtain the ZnO @ ZnS nanoarray core-shell structure.

Description

technical field [0001] The present invention relates to a preparation method of ZnO seed crystals prepared by magnetron sputtering, ZnO nano arrays grown by hydrothermal method and ZnS shell structure grown by hydrothermal method, and the grown ZnS-coated ZnO (referred to as ZnOZnS) nano The array core-shell structure can be used as the window layer of copper-zinc-tin-sulfur (CZTS) solar cells. The invention belongs to the technical field of solar cell thin film device preparation technology. Background technique [0002] Zinc oxide (ZnO) is a II-VI wide bandgap oxide semiconductor material with a bandwidth of about 3.37eV. It exhibits good n-type semiconductor performance and has good optoelectronic properties. ZnO has the characteristics of low preparation cost and low growth temperature, which is beneficial to reduce equipment cost, inhibit solid phase outdiffusion, improve film quality, and is easy to achieve doping. At the same time, the ZnO thin film is rich in raw m...

Claims

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Application Information

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IPC IPC(8): H01L31/18C23C14/35C01G9/02C01G9/08
CPCY02P70/50
Inventor 史伟民袁安东张月璐廖阳杨伟光李季戎钱隽王国华王晨韩洋沈心蔚陶媛
Owner SHANGHAI UNIV
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