Preparation method for improving grain size and density of CZTS film

A copper-zinc-tin-sulfur, dense technology, applied in the field of optoelectronic materials and new energy materials, can solve the problems of easy volatilization and loss of S and Sn, difficulty in preparing high-density, large-grain thin film materials, phase separation, etc., and achieve cost Low cost, avoid volatilization, and simple preparation process

Inactive Publication Date: 2013-11-20
JILIN UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] The present invention aims at the problem that S and Sn that occur during high-temperature post-heat treatment of the existing CZTS film are easy to volatilize, lose and phase separate, which makes it difficult to prepare high-density, large-grain film materials, and provides a vulcanization technology using sealed quartz tubes at a higher Method for preparing CZTS film with high density and large grain size at high temperature

Method used

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  • Preparation method for improving grain size and density of CZTS film
  • Preparation method for improving grain size and density of CZTS film
  • Preparation method for improving grain size and density of CZTS film

Examples

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Embodiment 1

[0023] Dissolve 10 ml each of copper acetate, zinc acetate, and stannous chloride with concentrations of 0.8 mol / L, 0.4 mol / L, and 0.4 mol / L in 30 ml of ethylene glycol methyl ether and 3 ml of ethanolamine solution. At 45°C, stir until completely dissolved, then add 10 ml of 2 mol / L thiourea solution and stir evenly to obtain a copper-zinc-tin-sulfur solution. This solution was dropped on a soda-lime glass substrate placed on a spin coater, and spin-coated at 800 rpm for 6 s, and then at 2500 rpm for 20 s. After spin coating, it was dried at 300 °C for 5 min. The spin-coating and drying process was repeated five times to obtain a copper-zinc-tin-sulfur thin film with a thickness of 2 μm. figure 1 It is the X-ray diffraction pattern of the copper-zinc-tin-sulfur thin film obtained after spin coating, and its diffraction peaks are all copper-zinc-tin-sulfur phases, and no second phase related to impurities is found, indicating that the obtained copper-zinc-tin-sulfur film has ...

Embodiment 2

[0025] The copper-zinc-tin-sulfur film sample prepared by the spin coating method was placed in a quartz tube, and the appearance size of the quartz tube was Φ 10mm×150mm, wall thickness 1mm. Put 500 mg of sulfur powder (purity 99%) into the quartz tube, and vacuum the quartz tube through a mechanical pump. After the vacuum degree of the quartz tube drops to 0.1 atm, use an oxyacetylene flame to melt and seal the open end of the quartz tube. Put the sealed quartz tube horizontally into the muffle furnace for constant temperature heat treatment at 700 °C for 1 h. After cooling with the furnace, take out the sample for testing and analysis. figure 2 It is the X-ray diffraction pattern of the film sample prepared by vulcanizing the sealed quartz tube at a high temperature of 700 °C, image 3 It is the EDX spectrum of the film sample, which shows that Cu:Zn:Sn:S in the film is about 2:1:1:4. The experimental data show that the sample is Cu with a single tetragonal phase struct...

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Abstract

The invention provides a preparation method for a CZTS film which has a square structure, high density and large granules, and belongs to the field of semiconductor photoelectric material and new energy material. The preparation method is characterized by adopting four compounds as raw materials, including copper acetate (Cu(CH3OO)2.H2O), zinc acetate (Zn(CH3COO)2), tin chloride (SnCl2) and sulfourea (CN2H4S); after the CZTS film is prepared by adopting a spin coating method, a CZTS film material with high density and good crystallization quality is prepared via high-temperature sulfurization process performed in a sealed quartz tube. The preparation method has the advantages of simple preparation process, short reaction time, controllable component and structure, low cost, no pollution caused during production and the like, can be applicable to production of mass CZTS film photovoltaic cell absorption material.

Description

technical field [0001] The invention belongs to the fields of photoelectric materials and new energy materials, and specifically refers to a preparation method for improving the crystal grain size and density of copper-zinc-tin-sulfur thin films. Background technique [0002] Thin-film solar cells have the advantages of less material, low cost, easy large-scale production, and can be deposited on flexible substrates for easy application. They have become one of the most promising photovoltaic materials in modern times. Semiconductor materials with a direct bandgap of 1.4-1.6 eV are considered ideal solar cell absorber materials. At present, the absorber layer of non-silicon-based thin-film solar cells is mainly based on cadmium telluride (CdTe), gallium arsenide (GaAs), copper indium gallium selenide Cu (In, Ga) Se 2 (referred to as CIGS), copper zinc tin sulfur Cu 2 ZnSnS 4 (referred to as CZTS) and other semiconductor materials. Because elements such as Cd, Te, Ga, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/032C01G19/00
CPCY02P70/50
Inventor 姚斌肖振宇丁战辉李永峰
Owner JILIN UNIV
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