Method for manufacturing copper-zinc-tin-sulfide absorbing layer thin film and copper-zinc-tin-sulfide solar cell

A solar cell, copper-zinc-tin-sulfur technology, applied in circuits, electrical components, final product manufacturing, etc., can solve the problems of inability to meet the needs of industrial production, highly toxic hydrazine hydrate, dangerous environments, etc., and achieve easy large-scale industrial production. , Dense high-quality absorbing layer, precise process control effect

Inactive Publication Date: 2014-04-30
EAST CHINA NORMAL UNIV
View PDF2 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In 2011, IBM introduced Cu 2 ZnSn(S,Se) 4 The conversion efficiency of thin-film batteries has been increased to 10.1%, but hydrazine hydrate is highly toxic and unstable, and it is very difficult to handle
However, the Scragg group adopts the N 2 /H 2 Sulfide the CZTS precursor in +S atmosphere, the process will generate H 2 explosion and the production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing copper-zinc-tin-sulfide absorbing layer thin film and copper-zinc-tin-sulfide solar cell
  • Method for manufacturing copper-zinc-tin-sulfide absorbing layer thin film and copper-zinc-tin-sulfide solar cell
  • Method for manufacturing copper-zinc-tin-sulfide absorbing layer thin film and copper-zinc-tin-sulfide solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] 1) Cleaning the glass substrate: The substrate is ultrasonically cleaned with alkaline solution, acetone, ethanol and deionized water in sequence, then blown dry with nitrogen, and dried in a vacuum drying oven for later use;

[0039] 2) using magnetron sputtering technology to deposit a metal molybdenum back electrode film for copper-zinc-tin-sulfur thin-film solar cells on a glass substrate; the thickness of the metal molybdenum back electrode film is 600 nanometers;

[0040] 3) Take copper sulfate, zinc sulfate, tin sulfate, sodium thiosulfate and potassium tartrate in a molar ratio of 2:1:1:4:10 and dissolve them in a solvent for ultrasonication for 5 minutes to obtain the electrolytic solution to be plated; then in step 2 The prepared molybdenum back electrode is electrodeposited and coated to obtain a dense nano-copper-zinc-tin-sulfur precursor film;

[0041] 4) Sulfidation annealing treatment: put the copper-zinc-tin-sulfur precursor film and 0.5g of sulfur powde...

Embodiment 2

[0048] 1) Cleaning the substrate: The substrate is ultrasonically cleaned with alkaline solution, acetone, ethanol and deionized water in sequence, then blown dry with nitrogen, and dried in a vacuum drying oven for later use;

[0049] 2) Utilize the magnetron sputtering technique to deposit the metal Mo back electrode film used for copper-zinc-tin-sulfur thin-film solar cells on the glass substrate, and its thickness is 900 nanometers;

[0050] 3) Take copper sulfate, zinc sulfate, tin sulfate, sodium thiosulfate and potassium tartrate in a molar ratio of 2:1:1:4:10 and dissolve them in a solvent to obtain the electrolytic solution to be plated after ultrasonication for 10 minutes; then in step 2 The prepared molybdenum back electrode is electro-deposited and coated to obtain a dense nano-copper-zinc-tin-sulfur precursor film; in other embodiments, the molar ratio is 1~4:0.5~2:0.5~2:1~10:5~ For any specific value within the range of 50, copper sulfate, zinc sulfate, tin sulfa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Deposition thicknessaaaaaaaaaa
Deposition thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for manufacturing a copper-zinc-tin-sulfide absorbing layer thin film. A CZTS solar cell absorbing layer is obtained through vulcanization after a CZTS precursor is co-deposited electrochemically. The invention further discloses a method for manufacturing a copper-zinc-tin-sulfide solar cell. The method can be operated at normal temperature and pressure and easy to adjust and control, H2S pollution is avoided, equipment is simple, cost is saved, the surface of the manufactured copper-zinc-tin-sulfide absorbing layer thin film is smooth and very compact, and the efficiency of the manufactured cell is high. The method can be widely used for large-scale industrial production.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and devices, and relates to a method for preparing a copper-zinc-tin-sulfur absorbing layer film and a method for preparing a copper-zinc-tin-sulfur thin film solar cell. Background technique [0002] With the continuous progress of human society, energy and environment have become two important issues facing human society. With the increasing shortage of fossil energy and the environmental pollution caused by the use of fossil energy, governments of various countries have introduced corresponding policies to develop and utilize renewable new energy. Solar power generation is more superior than other energy sources in terms of renewable, large amount, wide distribution, etc., or in terms of technical safety and reliability. In the future, with the development of photovoltaic power generation technology, solar photovoltaic power generation will become a research hotspot in the global new ene...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/032H01L31/18
CPCH01L31/18Y02P70/50
Inventor 陶加华孙琳杨平雄褚君浩
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products