141results about How to "Increase the voltage value" patented technology

A semiconductor chip is mounted on a heat sink disposed inside a through-hole of a wiring board, electrodes of the semiconductor chip and connecting terminals of the wiring board are connected by bonding wires, a sealing resin is formed to cover the semiconductor chip and the bonding wires, and solder balls are formed on the lower surface of the wiring board, thereby constituting the semiconductor device. The heat sink is thicker than the wiring board. The heat sink has a protruded portion protruding to outside from the side surface of the heat sink, the protruded portion is located on the upper surface of the wiring board outside the through-hole, and the lower surface of the protruded portion contacts to the upper surface of the wiring board. When the semiconductor device is manufactured, the heat sink is inserted from the upper surface side of the wiring board.

An apparatus and method is disclosed for improving timing margins of logic paths on a semiconductor chip. Typical logic embodiments, such as CMOS (Complementary Metal Oxide Semiconductor), have path delays that become shorter as supply voltage is increased. Embodiments of the present invention store product data on each particular chip. The product data includes, for examples, but not limited to, a voltage range having a low limit voltage and a high limit voltage, a limit temperature, and performance of the particular chip in storage for the particular chip. Each chip has a voltage controller, a timer, and a thermal monitor. The voltage controller communicates with a voltage regulator and dynamically causes a voltage supply coupled to the chip to be as high as possible in the voltage range, subject to the limit temperature.

A control method and apparatus are provided to convert a DC voltage into alternating voltage. The apparatus includes a first inverter and a second inverter to generate a first alternating voltage and a second alternating voltage, respectively. Also included is an interphase transformer to combine these alternating voltages in parallel to obtain a first resulting alternating voltage. The apparatus also includes a third inverter and a fourth inverter to generate a third and fourth alternating voltage, respectively. These are combined to form a second resulting alternating voltage. The second resulting alternating voltage is displaced in phase approximately 180° in relation to the first resulting alternating voltage.

Apparatus for an electrically programmable and erasable memory device and methods for programming, erasing and reading the device. The device has a single transistor including a source, a drain, a control gate and a floating gate positioned between the control gate, the source and the drain, where the floating gate is capacitively coupled to the drain. At least one part of the floating gate is partly positioned between the control gate, the drain and the source, and the other part of the floating gate overlaps with the drain. Further, the single transistor of the device includes means for injecting hot electrons generated by the drain induced secondary impact ionization onto the floating gate. Additionally, the means are arranged to induce Fowler-Nordheim tunnelling of charges from the floating gate to the drain.

The invention discloses a band-gap reference voltage circuit. A current source is additionally arranged, a reference voltage output end and a power source end are arranged, density of current flowing through a second triode is n times of the density of current flowing through a first triode in a micro current source unit, a power supply end of a difference amplifier unit is connected with the power source end, a collector of a third triode is connected with the power source end through the current source, an emitting electrode of the third triode is connected with an input end of the micro current source unit, the collector of the third triode is connected with an output end of the difference amplifier, and a connecting point and a base electrode of the third triode are both connected to a reference standard output end. As an implementation mode of the micro current source unit, resistance value of a third resistor is n times of that of a second resistor, and the first triode is symmetrically matched with the second triode. The band-gap reference voltage circuit is high in accuracy, low in power source noise, small in temperature coefficient, low in power, capable of directly generating reference voltage over 1.25V, needless of being connected with a peripheral resistor for working and suitable for generating reference voltage inside a chip.

The present invention relates to method and apparatus for preparing thin films of semiconductor films for radiation detector and photovoltaic applications. In one aspect, the present invention is directed to a method of forming a Cu(In,Ga)(S,Se)₂ layer with substantially uniform Ga distribution. In a particular aspect, the method includes depositing a precursor film on the base, the precursor film including Cu, In and Ga, sulfurizing the precursor film thus forming a sulfurized precursor layer with a substantially uniform Ga distribution, and selenizing the sulfurized precursor layer to reduce the sulfur concentration therein and obtain the Cu(In,Ga)(S,Se)₂ layer with substantially uniform Ga distribution. In a further aspect, the method also includes the step of selenizing the precursor film.

The invention relates to the technical field of flexible direct-current power transmission, particularly to a method for increasing the capacity of a flexible direct-current power transmission system and an apparatus thereof. According to the invention, by adding a full-bridge sub-module (FBSM) which can generate negative voltage into a bridge arm of a modular multilevel converter (MMC), direct-current output voltage of a transverter is balanced while alternating-current output voltage of the transverter is adjusted, thereby increasing the transmission capacity of the transverter. The method does not have higher requirements on the through-current capability of IGBT elements and proceeding from conventional engineering technologies, the application of flexible direct-current power transmission technologies in practical engineering is substantially optimized.

The invention relates to an electric heat mat controller, which adopts the conductive resistor whose resistance value changes followed by the temperature as a heating wire for a temperature controller. Therefore, the invention can regulate the resistance value in direct proportion with the temperature so as to accurately control the temperature of the electric heat mat. The temperature controller further comprises a temperature compensating unit, a positive feedback circuit unit, a safety protective circuit unit and an error correction unit. The temperature measured by the temperature measuring unit is compensated so as to measure the heating temperature of the Thermal sensitive wire errorlessly. In addition, a temperature comparing unit can stably output control signal. When the heater and sensor are short-circuiting and the sensor senses the adequate industrial electricity, a high level measuring voltage is supplied to a temperature comparing unit so as to switch the output device to the closing status and cut off the heating electrical source to the heater. Further, the error generated by the member connecting with the sensor or temperature setting unit is eliminated manually.

The invention provides a drive circuit applicable to a piezoelectric actuating pump. The piezoelectric actuating pump is provided with a piezoelectric actuator. The drive circuit is provided with a boosted circuit unit and a boosted propelling integrated circuit. The boosted circuit unit at least comprises a plurality of capacitors, a plurality of resistors and a boosted integrated circuit chip which is connected with the plurality of capacitors and the plurality of resistors. The boosted propelling integrated circuit is used for boosting voltage values of input voltage and converting polarity of the input voltage. Therefore, the output voltage is produced to drive the piezoelectric actuator so as to convert electric energy to mechanical energy.

A driving stage for a phase change non-volatile memory device may have an output driving unit which supplies an output driving current during an operation of programming of at least one memory cell. A driving-control unit receives an input current and generates at output a first control signal that controls supply of the output driving current by the output driving unit in such a way that a value of this current has a desired relation with the input current. A level-shifter element, set between the output of the driving-control unit and a control input of the output driving unit, determines a level shift of the voltage of the first control signal so as to supply to the control input of the output driving unit a second control signal, having a voltage value that is increased with respect to, and is a function of, the first control signal.

A DC/DC converter is able to step down a voltage value of a high-voltage battery, and is able to step up a voltage value of a low-voltage battery. The low-voltage battery is a battery that provides a lower voltage value than the high-voltage battery. The DC/DC converter includes a transformer, a third diode and a reactor. The transformer includes a first coil and a second coil. The first coil is connected to the low-voltage battery. The second coil is connected to the high-voltage battery. An anode of the third diode is connected to one end of the first coil. One end of the reactor is connected to a cathode of the third diode, and the other end of the reactor is connected to a positive electrode terminal of the low-voltage battery.

A frequency-jitter-controller for a power-converter is provided, and which includes a first and a second capacitance units, a first and a second charge-discharge control units, a comparing unit and a control unit. Both capacitance units are charged to a crossing-voltage during a charging phase and discharged to a reference voltage and a clamp voltage respectively during a discharging-phase in response to operations of both charge-discharge control units. The comparing unit outputs a pulse signal, compares voltages of both capacitance units during the charging phase, and compares the voltage of the first capacitance unit and the reference voltage during the discharging phase. The control unit generates a frequency jitter control signal according to the pulse signal to adjust a rising rate of the voltage on the second capacitance unit, so as to change a frequency of the pulse signal, and thus reduce EMI generated by switching switch-elements in the power-converter.

The present invention provides a control circuit with multiple power sources, which accepts an output signal from a comparator circuit. This control circuit with multiple power sources contains two components: one is a voltage transferring circuit, which connects to the comparator and accepts the first and the second input voltages to react the controls of respective output signals for generating the first voltage potential and the second voltage potential; another is an output circuit, which connects to the voltage transferring circuit to react the controls of the first voltage potential and the second voltage potential for deciding the correct output from the first input voltage or the second input voltage.

The invention provides an array substrate and a liquid crystal display panel. The array substrate comprises a substrate body, a thin film transistor layer located on the substrate body and a pixel electrode located on the thin film transistor layer. The array substrate comprises a plurality of sub-pixel areas, and each sub-pixel area comprises a main area and an auxiliary area. The pixel electrodes are arranged corresponding to the main area and the auxiliary area, and each pixel electrode comprises a first main electrode and a first branch electrode which correspond to the main area, and a second main electrode and a second branch electrode which correspond to the auxiliary area; the first branch electrode is electrically connected with the first main electrode at a first preset angle;thesecond branch electrode is electrically connected with the second main electrode at a second preset angle;and the first preset angle is different from the second preset angle. By controlling the angle of the pixel electrode, the number of thin film transistors in the prior art is reduced, the pixel aperture opening ratio and transmittance are increased, and meanwhile the wide viewing angle effectof the liquid crystal display panel is achieved.

A signal driving system generates an output swinging between a first power supply (e.g., about 1.2 Volts), powering first and second drivers, and a second power supply (e.g., about 3.3 Volts), powering a first current mirror. The second power supply is generated external to the signal driving system and is used to allow for a desired common-mode differential output signal range. However, the second power supply produces voltage at a level above a rating of the devices in the signal driving system. Therefore, protection devices are used to protect the elements of the signal driving system from the second power supply. Accordingly, through use of the signal driving system of the present invention, a high voltage current mode driver can operate in a low voltage process without damaging the devices in the signal driving system.

The invention discloses a centrifugal preparation method of an electrolyte thin film of a solid oxide fuel cell. The centrifugal preparation method comprises the following steps: adding electrolyte powder to absolute ethyl alcohol, carrying out mixing and ball-milling, adding a polyethylene glycol (PEG) assistant, and further carrying out mixed grinding to obtain uniform and stable electrolyte slurry; fixing an anode support body of which one surface is bound by a transparent adhesive tape on an anode support body bearing platform, putting the bearing platform into a clean centrifugal tube, and slowly injecting the electrolyte slurry into the centrifugal tube until the anode support body is completely immersed; starting a centrifugal machine, forming a uniform electrolyte film base body on the surface of the anode support body, carrying out thermal treatment, and centrifuging for a plurality of times; and finally sintering the electrolyte film base body at a high temperature to form an electrolyte thin film body. The electrolyte thin film prepared by the method is uniform, compact, smooth and good in uniformity; the centrifugal preparation method is low in cost, simple in technology and convenient to operate; the thickness of the electrolyte thin film can be controlled by the running frequency and time of the centrifugal machine; and the centrifugal preparation method adapts to industrial production on a large scale.