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Compound solar cell containing superlattice structure back field

A solar cell and superlattice technology, applied in the field of solar cells, can solve the problems of restricting the performance of solar cells, unable to suppress diffusion, limiting open circuit voltage, etc., to achieve the effect of improving efficiency, improving quality, and reducing the drop of open circuit voltage.

Active Publication Date: 2019-12-03
SHANGHAI INST OF SPACE POWER SOURCES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The back field structure of the solar cell cannot inhibit the dopant atoms in the highly doped region from continuously diffusing to the photoelectric absorption conversion region with a relatively low doping concentration during the long-term growth process, which limits the open circuit voltage and restricts the performance of the final solar cell

Method used

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  • Compound solar cell containing superlattice structure back field
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  • Compound solar cell containing superlattice structure back field

Examples

Experimental program
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Effect test

Embodiment 1

[0041] Take the fourth (0.73eV) solar cell in the four-junction solar cell as an example, such as image 3 As shown, the cell includes an n-type doped n++ layer 1, a highly p-type doped p++ layer 2, a superlattice back field region 3, a p layer 4, an i layer 5, an n layer 6, and a window layer arranged in sequence. 7.

[0042] n++ layer 1, using In 0.47 Ga 0.477 al 0.053 As, the band gap is 0.8eV, the thickness is 15nm, the doping element is Si, and the doping concentration is 5x10 19 cm -3 .

[0043] p++ layer 2, using In 0.47 Ga 0.477 al 0.053 As, the band gap is 0.8eV, the thickness is 15nm, the doping element is Zn, and the doping concentration is 2x10 19 cm -3 .

[0044] The back field region 3 contains 5 pairs of InAlAs / InP superlattice, the thickness of each layer of InAlAs and InP is 2nm, the doping element is Zn, and the doping concentration of InAlAs is 1x10 18 cm -3 , InP doping concentration 5x10 17 cm -3 .

[0045] The thickness of p layer 4 adopts...

Embodiment 2

[0052] Take the fifth (0.88eV) solar cell in the five-junction solar cell as an example, such as image 3 As shown, the cell includes an n-type doped n++ layer 1, a highly p-type doped p++ layer 2, a superlattice back field region 3, a p layer 4, an i layer 5, an n layer 6, and a window layer arranged in sequence. 7.

[0053] n++ layer 1, using In 0.47 Ga 0.424 al 0.106 As, the band gap is 0.9eV, the thickness is 15nm, the doping element is Si, and the doping concentration is 5x10 19 cm -3 .

[0054] p++ layer 2, using In 0.47 Ga 0.424 al 0.106 As, the band gap is 0.9eV, the thickness is 15nm, the doping element is Zn, and the doping concentration is 2x10 19 cm -3 .

[0055] The back field region 3 contains 5 pairs of InAlAs / InP superlattice, the thickness of each layer of InAlAs and InP is 2nm, the doping element is Zn, and the doping concentration of InAlAs is 1x10 18 cm -3 , InP doping concentration 5x10 17 cm -3 .

[0056] The thickness of p layer 4 adopts ...

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Abstract

The embodiment of the invention provides a compound solar cell containing a superlattice structure back field, and belongs to the technical field of solar cells. The highly doped tunnel junction region of the solar cell comprises a highly n-type doped n++ layer and a highly p-type doped p++ layer which are sequentially arranged from bottom to top, the back field region comprises a superlattice structure formed by an InAlAs layer and an InP layer pair, the p layer of the photoelectric absorption region adopts Iny1Ga1-y1Asx1P1-x1, 0<=x1<=1, 0<=y1<=1, the doping element is Zn, Mg, Be or C, and the doping concentration is 5*1015cm-3-1*1017cm-3. According to the solar cell, the energy band arrangement of the photoelectric absorption region and the back field is changed, multiple interfaces contained in the doped wide-band gap material InAlAs and narrow-band gap material InP superlattice effectively inhibit the influence of diffusion of a highly-doped tunnel junction region on a photoelectric absorption conversion region, the reduction of the open-circuit voltage of the solar cell caused by diffusion is decreased, and the quality of the pn junction of the photoelectric conversion absorption region is improved, so that the efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, and in particular provides a compound solar cell with a back field of a superlattice structure. Background technique [0002] III-V compound solar cells are recognized as a new generation of high-performance and long-life space main power sources due to their high conversion efficiency, strong radiation resistance, and good temperature characteristics. With the continuous improvement of compound semiconductor growth technology (such as metal organic compound vapor phase epitaxy MOCVD), the efficiency of III-V solar cells has been greatly improved. At present, the efficiency of single-junction GaAs cells has exceeded 29%, and the efficiency of bonded five-junction III-V solar cells has reached 36%. One of the key points to achieve high-efficiency five-junction-six-junction solar cells is to obtain the fourth, fifth and sixth junctions with a band gap of 0.7-1.1eV, that is, a wavelength of 177...

Claims

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Application Information

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IPC IPC(8): H01L31/0336H01L31/0352H01L31/075
CPCH01L31/0336H01L31/035236H01L31/035272H01L31/075Y02E10/548
Inventor 张玮陆宏波李欣益
Owner SHANGHAI INST OF SPACE POWER SOURCES
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