Compound solar cell containing superlattice structure back field

A solar cell and superlattice technology, applied in the field of solar cells, can solve the problems of restricting the performance of solar cells, unable to suppress diffusion, limiting open circuit voltage, etc., to achieve the effect of improving efficiency, improving quality, and reducing the drop of open circuit voltage.
CN110534598AActive Publication Date: 2019-12-03SHANGHAI INST OF SPACE POWER SOURCES
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SHANGHAI INST OF SPACE POWER SOURCES
Publication Date
2019-12-03

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Abstract

The embodiment of the invention provides a compound solar cell containing a superlattice structure back field, and belongs to the technical field of solar cells. The highly doped tunnel junction region of the solar cell comprises a highly n-type doped n++ layer and a highly p-type doped p++ layer which are sequentially arranged from bottom to top, the back field region comprises a superlattice structure formed by an InAlAs layer and an InP layer pair, the p layer of the photoelectric absorption region adopts Iny1Ga1-y1Asx1P1-x1, 0<=x1<=1, 0<=y1<=1, the doping element is Zn, Mg, Be or C, and the doping concentration is 5*1015cm-3-1*1017cm-3. According to the solar cell, the energy band arrangement of the photoelectric absorption region and the back field is changed, multiple interfaces contained in the doped wide-band gap material InAlAs and narrow-band gap material InP superlattice effectively inhibit the influence of diffusion of a highly-doped tunnel junction region on a photoelectric absorption conversion region, the reduction of the open-circuit voltage of the solar cell caused by diffusion is decreased, and the quality of the pn junction of the photoelectric conversion absorption region is improved, so that the efficiency of the solar cell is improved.
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Description

technical field

[0001] The invention relates to the technical field of solar cells, and in particular provides a compound solar cell with a back field of a superlattice structure. Background technique

[0002] III-V compound solar cells are recognized as a new generation of high-performance and long-life space main power sources due to their high conversion efficiency, strong radiation resistance, and good temperature characteristics. With the continuous improvement of compound semiconductor growth technology (such as metal organic compound vapor phase epitaxy MOCVD), the efficiency of III-V solar cells has been greatly improved. At present, the efficiency of single-junction GaAs cells has exceeded 29%, and the efficiency of bonded five-junction III-V solar cells has reached 36%. One of the key points to achieve high-efficiency five-junction-six-junction solar cells is to obtain the fourth, fifth and sixth junctions with a band gap of 0.7-1.1eV, that is, a wavelength of 177...

Claims

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