5results about How to "Avoid process complexity" patented technology

The utility model relates to pipeline connecting piece technical field and disclose a kind of high-strength steel wire mesh skeleton composite pipe connecting piece, including two high-strength steel wire mesh composite pipes, the outer wall of one end of two high-strength steel wire mesh composite pipes mutually close is all sleeved with rubber ring and connecting cover, rectangular slot is all set up in the both sides of connecting cover, and the both sides outer wall of connecting cover and rectangular slot corresponding position are fixedly installed with first fixed lug. In the utility model, by the bending pipe wall of everted of the end of composite pipe is divided, the self-adapting deformation of internal steel wire mesh skeleton is generated by the clamping force of pressing plate and connecting cover, mechanical interlock is formed, the upper and lower double fastening bolts symmetrically arranged in the both sides of connecting cover are pulled tight by the tension cooperation of first fixed lug and second fixed lug, the quick positioning and even pressure of pressing plate are realized, the bending pipe wall clamping stability is ensured, the process complexity of traditional welding or cementing is avoided, and installation can be completed by only standard tool on site.

This invention relates to the field of high-strength steel welding technology, and in particular to a high-toughness double-wire submerged arc welding method for EH36 thick plates. The high-toughness double-wire submerged arc welding method for EH36 thick plates provided by this invention includes the following steps: processing a single-sided bevel at the welding point of the EH36 thick plate; performing multi-layer, multi-pass welding along the single-sided bevel from bottom to top using submerged arc welding; arranging the weld beads in an alternating pattern, with the two side weld beads symmetrically distributed relative to the middle weld bevel; welding the middle weld bevel first, followed by welding the two side weld beads; wherein the center-to-center distance between adjacent weld beads is 8-12 mm, and the overlap rate between adjacent weld beads is 35%-50%; the interpass temperature during the welding process is 150-200℃. By optimizing the weld bevel arrangement and welding process, subsequent weld beads exert a reasonable reheating effect on the preceding weld beads, thereby controlling the thermal cycling characteristics of the weld joint area, refining the weld microstructure, reducing the proportion of the critical coarse-grained heat-affected zone, and improving the low-temperature impact toughness of the weld metal.

This invention discloses a polylactic acid (PLA) fiber, its preparation method, and its applications, belonging to the field of polymer materials technology. Through a three-step continuous chemical modification process involving ring-opening polymerization, silanization, amylation, and Schiff base grafting onto stereocomposite PLA, with modified MXene as the core functional modifier, the fiber is endowed with multiple functions including nano-reinforcement, interfacial compatibility, dynamic self-healing, and stereocomposite heat resistance. The prepared PLA fiber exhibits a tensile strength of 80-95 MPa, an elongation at break of 800-1000%, a melting point of 180-190℃, a strength retention rate of >92% after 180 days at 40℃ / 50% RH, and a scratch self-healing rate of >80% after 1 hour of heating at 80℃, while maintaining complete biodegradability. The process of this invention uses traditional melt spinning equipment, is suitable for large-scale production, and can be applied to high-end textiles, medical, filtration, and packaging fields.

The invention provides an LTCC microwave ceramic material and a preparation method thereof.The LTCC microwave ceramic material is composed of glass powder and Al2O3 powder, the glass powder is mainly composed of Si-B-Ba-Ca, and a small amount of metal oxide and carbonate are added and doped; the Al2O3 powder is formed by grading at least two kinds of Al2O3 with different particle sizes, and D50 of the at least two kinds of Al2O3 with different particle sizes is not larger than 4 micrometers. By adopting the technical scheme, the dielectric constant of the material is stabilized at 7.1, the dielectric loss is as low as 0.0005, the material can be co-fired with a silver electrode at 850-900 DEG C, a sintered ceramic body is low in porosity and high in density, silver diffusion is effectively inhibited, and the material is suitable for high-frequency and high-reliability application scenes such as laminated high-frequency inductors and LTCC radio frequency devices.

The invention provides a photosensitive thin film transistor, a semiconductor substrate and a preparation method thereof. The photosensitive thin film transistor comprises a substrate, an active layer, a source drain electrode layer and an oxygen absorption layer. The active layer is located on the substrate; the active layer is an oxide semiconductor; the source and drain electrode layer is arranged on one side, far away from the substrate, of the active layer; the oxygen absorption layer is arranged between the substrate and the active layer and is in contact with the active layer; wherein the oxygen absorption layer is used for absorbing part of oxygen in the active layer; and the contact interface of the oxygen absorption layer and the active layer is embedded. The oxygen uptake layer is arranged to capture oxygen in the active layer to induce formation of oxygen vacancies, so that the effective band gap is reduced. The contact interface of the oxygen uptake layer and the active layer is embedded, so that the oxygen uptake layer can be directly and tightly contacted with the active layer, and oxygen atoms are efficiently captured. Extra light absorption layers such as quantum dots do not need to be introduced, and the process complexity and heterojunction interface defects caused by a traditional light absorption layer are avoided.