A solar cell based on oxygen-doped zinc telluride nanowire array and its preparation method

A nanowire array and solar cell technology, applied in the field of solar cells, can solve the problems of high cost, high energy consumption, complex manufacturing process, etc., and achieve the effects of high photoelectric conversion efficiency, reduced recombination probability, and reduced drift distance.

Active Publication Date: 2017-12-05
NANJING UNIV
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Problems solved by technology

Existing solar cells are generally made of ultra-pure single-crystal silicon wafers, and the thickness of this very expensive material is required to be about 200um in order to absorb as much sunlight as possible, which makes the manufacturing process of silicon-based flat-panel solar cells very difficult. complex, high energy consumption and high cost

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  • A solar cell based on oxygen-doped zinc telluride nanowire array and its preparation method
  • A solar cell based on oxygen-doped zinc telluride nanowire array and its preparation method

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Embodiment Construction

[0017] Below in conjunction with accompanying drawing, the solar cell based on oxygen-doped zinc telluride nanowire array of the present invention and preparation method thereof are described in detail: 1, nanowire (array); 2, n-type AZO transparent conductive layer; 3, PMDS supporting layer ; 4, p-type high conductivity silicon substrate.

[0018] refer to figure 1 As shown, the solar cell based on the oxygen-doped zinc telluride nanowire array of the present invention includes: zinc oxide / oxygen-doped zinc telluride / zinc telluride coaxial nanowire (array) 1, n-type AZO transparent conductive layer 2 , polydimethylsiloxane (polydimethylsilaxone, PMDS) support layer 3, a solar cell structure composed of p-type high-conductivity silicon substrate 4; wherein n-type AZO transparent conductive layer 2 wraps zinc oxide / oxygen-doped zinc telluride / The top of the zinc telluride coaxial nanowire 1 and forms a contact, the PMDS support layer wraps the bottom end of the zinc oxide / oxy...

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Abstract

The invention discloses a solar cell based on an oxygen-doping zinc telluride nanowire array. The solar cell comprises an n-type AZO transparent conducting thin film coaxially coated with a zinc oxide layer, an oxygen-doping zinc telluride layer and a zinc telluride layer at the top end of the nanowire array, the nanowire array coaxially coated with the zinc oxide layer, the oxygen-doping zinc telluride layer and the zinc telluride layer, a PMDS supporting layer coated at the bottom end of the nanowire and a p-type doping high-conductivity monocrystalline silicon layer substrate from top to bottom in sequence; the nanowire array coaxially coated with the zinc oxide layer, the oxygen-doping zinc telluride layer and the zinc telluride layer with intermediate area characteristics are used as a photoelectric absorption layer; and electrodes are led out on the AZO transparent conducting thin film and the p-type doping high-conductivity monocrystalline silicon layer respectively.

Description

technical field [0001] The invention relates to a solar cell structure with a nanowire absorbing layer and a preparation method thereof, belonging to the technical field of solar cells. Background technique [0002] Solar cells are photoelectric devices that convert solar energy into electrical energy by using the photovoltaic effect of photovoltaic semiconductor materials, and have been widely used in production and life. Existing solar cells are generally made of ultra-pure single-crystal silicon wafers, and the thickness of this very expensive material is required to be about 200um in order to absorb as much sunlight as possible, which makes the manufacturing process of silicon-based flat-panel solar cells very difficult. It is complicated, consumes a lot of energy, and costs high. Compared with traditional solar cells, intermediate-band solar cells achieve high-efficiency photoelectric conversion with a relatively simple structure, and the nanowire absorption layer with...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0296H01L31/032H01L31/0352H01L31/077H01L31/18B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L31/02963H01L31/032H01L31/035227H01L31/077H01L31/18H01L31/1828Y02E10/543Y02E10/547Y02P70/50
Inventor 叶建东李靖刘松民朱顺明汤坤顾书林
Owner NANJING UNIV
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