Efficient and stable planar heterojunction perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of insufficient photoelectric conversion efficiency, easy agglomeration, high energy consumption, etc., and achieve the effect of good light absorption characteristics

Active Publication Date: 2020-04-28
GUILIN UNIV OF ELECTRONIC TECH
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] After years of development, the current solar cells can be roughly divided into three categories (silicon solar cells; cadmium telluride solar cells, gallium arsenide solar cells, copper zinc selenium sulfur solar cells; new thin film solar cells), traditional solar cell preparation process High cost, high energy consumption, fragility, and high pollution have always been important factors restricting its further development (Energy Environ.Sci., 2016, 9, 3007-3035), so it is particularly necessary to develop new solar cells
[0005] At present, the inverted planar heterojunction perovskite solar cells still have problems such as insufficient photoelectric conversion efficiency and insufficient device stability. The main reason is that perovskite is easy to decay from the grain boundary under the action of water (EnergyEnviron.Sci. 2017,10,516-522), followed by the electron transport layer used in the inverted planar heterojunction perovskite solar cell is generally a fullerene derivative PCBM (J.Mater.Chem.A,2016,4,8554; Adv.Mater .2014,26,6503-6509; ACSAppl.Mater.Interfaces 2017,9,43902-43909), its spherical molecular structure leads to problems such as easy agglomeration and poor film formation (OrganicElectronics 2015,24,101-105) will further affect the device Performance and Stability Improvements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Efficient and stable planar heterojunction perovskite solar cell and preparation method thereof
  • Efficient and stable planar heterojunction perovskite solar cell and preparation method thereof
  • Efficient and stable planar heterojunction perovskite solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1) The commercially purchased ITO was ultrasonically cleaned in acetone, ITO cleaning agent, deionized water, and isopropanol. After cleaning, it was blown dry with nitrogen, and after ozone treatment for 10-30 minutes, put it into a petri dish and transfer it to a glove box (N 2 under gas nitrogen) for standby;

[0032] 2) Form a film of PTAA on ITO with a spin coating process, the film thickness is about 5-20nm, and anneal on a hot stage at 60-100°C for 10 minutes;

[0033] 3) 1.2-1.3mol / L of PbI 2 :MAI (1.2:0.3) mixed solution is spin-coated on the PTAA film layer with the speed of 6Krpm, and after the spin-coating process film is formed, the MAI solution of 40mg / ml is drop-coated from top to bottom. Then the film was placed on a hot stage at 100°C and annealed for 10 minutes. where PbI 2 : the solvent of the MAI mixed solution is DMF, and the MAI solution is dissolved in Virahol;

[0034] 4) Spin-coat the chlorobenzene solution of PEO on the perovskite active laye...

Embodiment 2

[0039] 1) The commercially purchased FTO was ultrasonically cleaned in acetone, FTO cleaning agent, deionized water, and isopropanol. After cleaning, it was blown dry with nitrogen, and after ozone treatment for 10-30 minutes, put it into a petri dish and transfer it to a glove box (N 2 under gas nitrogen) for standby;

[0040] 2) Form a film of PEDOT:PSS on FTO with a spin coating process, the film thickness is about 5-30nm, and anneal at 70-130°C for 15 minutes on a hot stage;

[0041] 3) the PbI of 1mol / L 2 :MAI (1:1) mixed solution was spin-coated on the PEDOT:PSS film layer at a speed of 4Krpm. After the spin-coating process was formed, the film was placed on a hot stage at 100°C and annealed for 10 minutes. where PbI 2 : The solvent of the MAI mixed solution is DMF;

[0042] 4) Spin-coat the chlorobenzene solution of PEO on the perovskite active layer with a thickness of about 1-10 nm, and anneal on a hot stage at 70-100 ° C for 10 minutes;

[0043] 5) Spin-coat the ...

Embodiment 3

[0047] 1) The commercially purchased FTO was ultrasonically cleaned in acetone, FTO cleaning agent, deionized water, and isopropanol. After cleaning, it was blown dry with nitrogen, and after ozone treatment for 10-30 minutes, put it into a petri dish and transfer it to a glove box (N 2 under gas nitrogen) for standby;

[0048] 2) Put V 2 o 5 The precursor solution is formed on the FTO by spin coating process, the film thickness is about 10-20nm, and annealed on the hot stage at 150°C for 30 minutes;

[0049] 3) 889mg / ml FAPbI3, 33mg / ml MAPbBr3 and 33mg / ml MACl were dissolved in a mixed solvent of DMF / DMSO (8:1v / v), and then spin-coated on the V2O5 film. In the spin coating process, two-step spin coating is adopted, the first section is 1000 rotations for 5 seconds, the second section is 5000 rotations for 20 seconds, and 100ul chlorobenzene is drip-coated on the perovskite film at the second section 15 seconds to promote film crystallization . Then the film was placed on ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an efficient and stable planar heterojunction perovskite solar cell and a preparation method thereof, an inverted perovskite solar cell structure is adopted, a transparent conductive material and silver are respectively used as an anode and a counter electrode, PCBM is used as an electron transport layer, and polyoxyethylene is used to modify a perovskite/electron transportlayer interface; polyoxyethylene adopted in the perovskite solar cell can effectively increase electron transmission between perovskite and the electron transport layer interface, reduce the serial resistance and increase a fill factor and current density of the perovskite solar cell so as to improve the photoelectric conversion efficiency of the perovskite solar cell. The efficiency of the wholedevice is obviously improved compared with that of an unmodified perovskite cell; the method is simple in process, low in cost and obvious in effect, can be widely applied to different types of planar heterojunction perovskite solar cells, and can be applied to large-scale production.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cells, and in particular relates to a high-efficiency and stable planar heterojunction perovskite solar cell and a preparation method. Background technique [0002] In recent years, with the depletion of resources and energy, environmental problems have become more and more prominent, and their accompanying economic, political and social problems have become important factors restricting human development. Therefore, the development of non-polluting new energy sources has attracted more and more attention. As a clean and pollution-free renewable energy with huge reserves, solar energy has great development potential. So people began to focus on solar cells that can convert solar energy into electricity. [0003] After years of development, the current solar cells can be roughly divided into three categories (silicon solar cells; cadmium telluride solar cells, gallium arsenide solar cells...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/20Y02E10/549
Inventor 熊健范宝锦何珍代忠军赵倩薛小刚其他发明人请求不公开姓名
Owner GUILIN UNIV OF ELECTRONIC TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap