Inverted planar heterojunction hybrid perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of reducing defect state density and increasing energy loss, and achieve the effect of good light absorption characteristics

Pending Publication Date: 2020-05-08
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The existence of too many defects and traps will cause the charge to recombine in advance during the transfer process, resulting in an increase in energy loss
Therefore, many reports claim that certain materials are introduced into the perovskite layer as additives to inhibit the decomposition of perovskite and the formation of defect vacancies, so as to reduce the density of defect states and improve the photovoltaic performance of perovskite solar cells. (C. Liu, ACS Applied Materials & Interfaces, 10(2018): 1909-1916; J. Kim, Advanced Functional Materi

Method used

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  • Inverted planar heterojunction hybrid perovskite solar cell and preparation method thereof
  • Inverted planar heterojunction hybrid perovskite solar cell and preparation method thereof
  • Inverted planar heterojunction hybrid perovskite solar cell and preparation method thereof

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Embodiment 1

[0035] 1) Clean the patterned silver nanowire flexible substrate with acetone, cleaning solution, deionized water three times and isopropanol in sequence for 15-30 minutes respectively. After ozone treatment for 15 to 30 minutes, put it into a nitrogen-protected glove box for subsequent use;

[0036] 2) MoO x Deposited on the flexible substrate of nano-silver wire as a hole transport layer by spin coating method, the film thickness is about 5-20 nanometers, and annealed on a hot stage at 80-100°C for 15-30 minutes;

[0037] 3) 1.2-1.3mol / L of PbI 2 :MAI (1.2:0.3) mixed solution is spin-coated on the MoOx film layer with the speed of 6Krpm, and during the spin-coating process, the MAI solution of 40mg / ml is drip-coated from top to bottom. Then the film is placed on a hot stage at 90-110° C., and annealed for 15-30 minutes. where PbI 2 : the solvent of the MAI mixed solution is DMF, and the MAI solution is dissolved in Virahol;

[0038] 4) Spin-coat PVP dissolved in isoprop...

Embodiment 2

[0043] 1) Clean the patterned copper nanowire substrate with acetone, cleaning solution, deionized water three times and isopropanol in sequence for 15-30 minutes respectively. After processing for 15-30 minutes, put it into a nitrogen-protected glove box for standby;

[0044] 2) NiO x Deposited on the copper nanowire substrate as a hole transport layer by spin coating method, the film thickness is about 5-20 nm, and annealed on a hot stage at 80-100°C for 15-30 minutes;

[0045] 3) 1.2-1.3mol / L of PbI 2 :MAI (1:1) mixed solution was spin-coated on NiO at a speed of 4Krpm x On the film layer, during the spin coating process, chlorobenzene was drop-coated from top to bottom. Then the film is placed on a hot stage at 90-110° C., and annealed for 15-20 minutes. where PbI 2 : The solvent of the MAI mixed solution is DMF;

[0046] 4) Spin-coat PVP dissolved in isopropanol on the perovskite film with a thickness of 1-8 nanometers, and anneal on a hot stage at 50-120° C. for 10...

Embodiment 3

[0051] 1) Clean the patterned FTO glass substrate with acetone, cleaning solution, three times of deionized water and isopropanol for 15-30 minutes respectively. After cleaning, dry it with nitrogen and put it into a petri dish, and treat it with ultraviolet ozone. After 15 to 30 minutes, put it into a nitrogen-protected glove box for standby;

[0052] 2) Deposit PEDOT:PSS on the FTO glass substrate by spin coating method as a hole transport layer, the film thickness is about 5-20 nm, and anneal on a hot stage at 80-100°C for 15-30 minutes;

[0053] 3) 368.8mg PbI 2 and 55.634 mg PbCl 2 Dissolved together in 1ml DMF to form a precursor solution, spin-coated on the PEDOT:PSS film layer at a speed of 6Krpm, during the spin-coating process, drop-coated 70mg / ml MAI solution from top to bottom. Then the film is placed on a hot stage at 90-110° C., and annealed for 15-20 minutes. Wherein the solvent of the MAI mixed solution is Virahol;

[0054] 4) Spin-coat PVP dissolved in iso...

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Abstract

The invention discloses an inverted planar heterojunction hybrid perovskite solar cell and a preparation method thereof. According to the invention, an inverted planar heterojunction structure solar cell is adopted, a transparent electrode and silver are respectively used as an anode and a cathode, poly (triarylamine) is used as a hole transport layer, a fullerene derivative PC61BM is used as an electron transport layer, and polyvinylpyrrolidone is used as a perovskite passivation layer. According to the invention, polyvinylpyrrolidone can effectively passivate the grain boundary of perovskite; the surface defects of the perovskite are reduced, the series resistance of the perovskite cell is reduced, the filling factor and the current density of the solar cell are improved, the photoelectric conversion efficiency of the solar cell is finally improved, and the performance of the modified and passivated perovskite solar cell is greatly improved compared with the performance of an unpassivated device. The preparation method is simple in process operation, high in repeatability, low in cost and suitable for preparation and large-scale application of various planar heterojunction perovskite solar cells.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cells, and in particular relates to an inverted planar heterojunction hybrid perovskite solar cell and a preparation method thereof. Background technique [0002] The continuous development of human life and the rapid progress of science and technology are accompanied by a series of ever-increasing crises, such as environmental degradation, energy depletion, melting glaciers, and species extinction. The emergence of these crises has become a constraint for human survival and development, causing The main reason for these problems is the energy problem. Energy has always been an important driving force for the development of human civilization, and finding new energy to replace traditional energy has become the primary problem to be solved urgently. As the green energy with the most energy, the widest distribution and the easiest access, solar energy has great potential for unlimited devel...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K85/30H10K30/00Y02E10/549Y02P70/50
Inventor 熊健代忠军何珍范宝锦刘伟之赵倩薛小刚蔡平张坚
Owner GUILIN UNIV OF ELECTRONIC TECH
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