Method for preparing high-quality perovskite crystal thin film

A perovskite, high-quality technology, applied in the direction of electrical solid devices, semiconductor devices, semiconductor/solid device manufacturing, etc., can solve the problems of difficult to completely convert perovskite, perovskite layer dissolution, PbI residue, etc., to shorten the preparation time Period, uniform grain size distribution, and good crystallinity

Inactive Publication Date: 2016-10-26
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The quality of the perovskite crystal film prepared by the two-step method is generally better than that of the one-step method, but the two-step method is also difficult to completely convert PbI 2 Disadvantages of Perovskite
The two-step method of soaking requires several hours of soaking to completely convert lead iodide, but the perovskite layer will dissolve or even fall off as the soaking time prolongs; the two-step method of steam treatment also requires a longer reaction time , and still have PbI 2 residual

Method used

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  • Method for preparing high-quality perovskite crystal thin film
  • Method for preparing high-quality perovskite crystal thin film
  • Method for preparing high-quality perovskite crystal thin film

Examples

Experimental program
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Effect test

Embodiment 1

[0041] (1) Preparation of reaction solution

[0042] PbI 2 and DMSO were added to the DMF solvent, where PbI 2 The concentration is 1M, DMSO and PbI 2 Equivalent molar ratio, then magnetically stirred at room temperature for 1 hour to make PbI 2 Completely dissolve to obtain reaction solution A; mix methylammonium iodide (MAI) and formamidinium iodide (FAI) in a molar ratio of 1:9, and then dissolve the mixture in isopropanol solvent In , the concentration of the solute in the mixture was 0.41 mM, and the solute was completely dissolved by shaking to obtain the reaction solution B.

[0043] (2) Spin coating film formation

[0044] a) Dense TiO2 layer and mesoporous TiO have been formed on the heated surface 2 Layer the FTO conductive substrate so that its temperature is maintained at 65 °C.

[0045] b) The reaction solution A prepared in step (1) is added dropwise on the substrate prepared in a) above, and spin-coated for the first time to form PbI 2 film, wherein the r...

Embodiment 2

[0050] (1) Preparation of reaction solution

[0051] PbI 2 and DMSO were added to the DMF solvent, where PbI 2 The concentration is 1M, DMSO and PbI 2 Equivalent molar ratio, then magnetically stirred at room temperature for 1 hour to make PbI 2 Completely dissolve to obtain reaction solution A; mix MAI and FAI at a molar ratio of 3:7, then dissolve the mixture in isopropanol solvent, the solute concentration of the mixture is 0.41mM, shake to completely dissolve the solute to obtain reaction solution B.

[0052] (2) Spin coating film formation

[0053] Same as step (2) in Example 1.

[0054] (3) heat treatment

[0055] Same as step (3) in Example 1.

Embodiment 3

[0057] (1) Preparation of reaction solution

[0058] PbI 2 and DMSO were added to the DMF solvent, where PbI 2 The concentration is 0.8M, DMSO and PbI 2 Equivalent molar ratio, then magnetically stirred at room temperature for 1 hour to make PbI 2 Completely dissolve to obtain reaction solution A; mix MAI and FAI at a molar ratio of 9:1, then dissolve the mixture in isopropanol solvent, the solute concentration of the mixture is 0.43mM, shake to completely dissolve the solute to obtain reaction solution B.

[0059] (2) Spin coating film formation

[0060] a) Dense TiO has been formed on the heated surface 2 layer and mesoporous TiO 2 Layer the FTO conductive substrate so that its temperature is maintained at 65 °C.

[0061] b) Add the reaction solution A prepared in step (1) dropwise to the mesoporous TiO formed in a) above 2 layer, the first spin coating is performed to form a PbI 2 film, wherein the rotation speed is 3500rpm, the spin coating time is 30s, and the amo...

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Abstract

The invention discloses a method for simply and quickly preparing a high-quality perovskite crystal thin film, and belongs to the technical field of solar cells. The method comprises the main steps of firstly forming a flat lead iodide thin film on a substrate through a film forming technology; and then processing a PbI2 thin film through a mixed solution of CH<3>NH<3>X and HC(NH<2>)<2>X and carrying out thermal treatment to obtain the high-quality perovskite crystal thin film. Under the condition of not adopting the equipment of vacuum equipment, a glove box and the like, the perovskite crystal thin film which is controllable in thickness, good in crystallinity, high in coverage rate, flat and smooth in surface and good in light absorption performance can also be prepared by the method disclosed by the invention; the technology is simple in operation; and the preparation cycle is short. The perovskite crystal thin film prepared through the method is applied to the solar cell as a light absorption material; and the prepared cell device is high in efficiency and good in stability, and has important reference value for implementation of low-cost manufacturing of the high-efficiency perovskite solar cell.

Description

technical field [0001] The invention belongs to the technical field of thin films of photoelectric devices (especially solar cells or photodetectors), and mainly relates to a simple and rapid method for preparing high-quality perovskite crystal thin films. Background technique [0002] In order to realize the sustainable development of human society, the current energy crisis and environmental pollution are two major problems that urgently need countries all over the world to actively respond to and constantly develop new theories and technologies to find solutions. Among them, the development and utilization of renewable energy is the Not a bad idea. Solar energy, wind energy, biomass energy, tidal energy, etc. are all cheap and clean renewable energy sources. Among them, solar energy has the advantages of inexhaustibility, no geographical restrictions, and flexible and diverse utilization methods. One of the renewable energy sources with the most development potential in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/12H10K85/30H10K30/30Y02E10/549
Inventor 李静瞿慧尹君
Owner XIAMEN UNIV
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