CIGS powder, CIGS target, CIGS film and preparation method thereof

A powder and target technology, applied in the field of CIGS thin film solar cell absorber layer, can solve the problems of difficult binary or unary multiphase structure of CIGS thin film, low photoelectric conversion efficiency of solar cells, unsuitable for large-scale industrialization, etc. The effect of broad chemical prospect, good controllability and high utilization rate of raw materials

Inactive Publication Date: 2009-12-30
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The selenization method after sputtering is widely used, but the process is cumbersome, the control is relatively complicated, and the utilization rate of raw materials is not high. In addition, H 2 The severe toxicity of Se gas also limits its application
Non-vacuum technologies mainly include electrochemical deposition, screen printing, spray pyrolysis and other methods, which are low in cost, but it is difficult to obtain CIGS thin films that meet the stoichiometric ratio of elements and are prone to binary or monolithic multiphase structures, resulting in solar cells. Low photoelectric conversion efficiency
[0004] The above-mentioned existing technologies are not suitable for large-scale industrialization, and the development of faster, simpler, lower-cost, and higher-efficiency CIGS absorber layer preparation technology is the development direction of CIGS thin-film solar cells

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] CuI, InI 3 , GaI 3 and Na 2 Se is the raw material, by molar ratio CuI:InI 3 : GaI 3 :Na 2 Se is 1:0.7:0.3:2, weigh 19.045g CuI, 34.687g InI 3 , 13.513g GaI 3 Dissolve in appropriate amount of pyridine, weigh 24.988gNa 2 Se was dissolved in an appropriate amount of methanol, and mixed with N 2 (purity=99.99%) in a protected three-neck flask, and the temperature was controlled to be 0° C., and stirred with a magnetic stirrer, and the reaction time was controlled to be 1 to 5 minutes. After the reaction is completed, the product is subjected to precipitation and liquid separation on a centrifuge, and the product obtained after separation is washed with deionized water and absolute ethanol, and then baked in a drying oven to a dry state. After drying, the product is in N 2 Heat treatment for 1 hour under atmosphere protection, the heat treatment temperature is 300-500°C. The heat-treated product was ground to obtain a powder sample.

[0045] The main component o...

Embodiment 2

[0047] with CuCl 2 , InCl 3 , GaCl 3 and elemental Se powder as raw materials, by molar ratio CuCl 2 :InCl 3 : GaCl 3 : Se is 1:0.7:0.3:2, weigh 13.445g CuCl 2 , 15.483g InCl 3 , 5.282g GaCl 3 , 15.792g Se powder is dissolved in appropriate amount of ethylenediamine (C 8 h 8 N 2 ) in Tong N 2 (purity = 99.99%) protected three-necked flask, the three-necked flask was placed in an oil bath (methicone oil), the temperature was controlled at 120° C., and the reaction was carried out by stirring with a magnetic stirrer. The reaction time is controlled to be 12h~48h respectively. After the reaction is completed, the product is subjected to precipitation and liquid separation on a centrifuge, and the product obtained after separation is washed with deionized water and absolute ethanol, and then baked in a drying oven to a dry state. Heat treatment process is with embodiment 1.

[0048] The main component of the prepared powder is CuIn 0.7 Ga 0.3 Se 2 ; The grain size ...

Embodiment 3

[0050] Raw material and proportioning are identical with embodiment 2, and organic solvent selects triethylenetetramine (C 6 h 8 N 4 ), the reaction temperature is controlled at 200°C. Others are the same as embodiment 2.

[0051] The main component of the prepared powder is CuIn 0.7 Ga 0.3 Se 2 ; The grain size is nanoscale and increases with the increase of reaction time. The powder after heat treatment at 500℃ is pure CuIn 0.7 Ga 0.3 Se 2 Mutually.

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Abstract

The invention provides CIGS powder, a CIGS target, a CIGS film and a preparation method thereof. The CIGS powder has a pure CuInxGa1-xSe2 phase, wherein x is more than 0 and is less than 1; and the CIGS target has a homogeneous CuInxGa1-xSe2 phase, and is obtained from the CIGS powder through cold isostatic pressing or compression molding and then sintering. The method for preparing the CIGS film comprises the steps of: depositing a layer of film by the CIGS target through a magnetron sputtering method, and then performing heat treatment on the film. The relative density of the CIGS target reaches over 95 percent, and the CIGS target has uniform components, has the homogeneous CuInxGa1-xSe2 phase, and has low production cost and steady performance. The preparation technology for the CIGS film greatly simplifies the prior process, and improves the utilization rate of raw materials and production efficiency.

Description

technical field [0001] The invention relates to a CIGS powder, a target material, a thin film and a preparation method thereof, which are applied to the absorbing layer of a CIGS (copper indium gallium selenium) thin film solar cell. Background technique [0002] Solar cells need to have the characteristics of high efficiency, low cost, and durability. CIGS thin-film solar cells have become the most promising new type of solar cells because of their low cost, high efficiency (the highest conversion efficiency is 19.5%), and stable performance. Among them, the CIGS absorber film is the key factor affecting the photoelectric conversion efficiency of the cell. The composition of CIGS can be expressed as CuIn x Ga 1-x Se 2 form, with a chalcopyrite phase structure, is CuInSe 2 and CuGaSe 2 of mixed crystal semiconductors. CuInSe 2 The band gap is 1.04eV, CuGaSe 2 The band gap is 1.68eV, and they are all direct band gap semiconductor materials, and the absorption coeffic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00C23C14/34C23C14/06
Inventor 周继承巩小亮黄迪辉
Owner CENT SOUTH UNIV
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