Copper-zinc-tin-sulfur or copper-zinc-tin-selenium target for absorbed layer of thin-film solar battery, preparation method for target and application of target

A copper-zinc-tin-selenium thin film and solar cell technology, applied in chemical instruments and methods, circuits, tin compounds, etc., can solve problems such as poor process stability, difficult film preparation, and complicated control of process parameters, and achieve improved efficiency and porosity The effect of low and high density

Inactive Publication Date: 2012-03-14
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Non-vacuum preparation methods, including electrodeposition, spin coating, spray pyrolysis, etc., although the process is simple and the equipment cost is low, the main disadvantage is that the process stability is poor, and it is difficult to prepare large-scale and large-area thin films.
Vacuum methods include multiple co-evaporation methods, laser pulse deposition, and post-magnetron sputtering vulcanization (or selenization), etc. Among them, the method that is more suitable for large-scale industrial production is the post-magnetron sputtering vulcanization (or selenization) method. The process parameters of the method are easy to control, have good stability and uniform film quality, and are especially suitable for producing large-area films; however, the subsequent vulcanization (or selenization) process involves highly toxic sulfides (or selenides), and the control of process parameters is complicated. Difficult to promote and apply on a large scale

Method used

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  • Copper-zinc-tin-sulfur or copper-zinc-tin-selenium target for absorbed layer of thin-film solar battery, preparation method for target and application of target
  • Copper-zinc-tin-sulfur or copper-zinc-tin-selenium target for absorbed layer of thin-film solar battery, preparation method for target and application of target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Take Cu 2 S, ZnS, SnS 2The powder is used as the raw material, weighed at a molar ratio of 1:1:1, added deionized water or absolute ethanol as a ball milling medium, and mixed and ball milled at a speed of 350 r / min for 8 hours using a planetary ball mill. Dry the powder after ball milling, then put it into a high-temperature furnace with argon gas at atmospheric pressure for solid-phase synthesis reaction, raise the temperature to 400-700 degrees at a rate of 3 degrees per minute, keep it warm for 2 hours, and then cool naturally to room temperature. The reacted powder was ball-milled for 8 hours for the second time, and dried for later use. The powder after high-temperature synthesis and secondary ball milling is put into a steel mold, and subjected to axial pressure molding to obtain a biscuit. Finally, put the pressed green body into the sintering furnace, fill it with an inert gas such as argon or nitrogen at an atmospheric pressure, raise it to 700-800°C at a r...

Embodiment 2

[0024] Take Cu 2 S, ZnS, SnS 2 The powder is used as the raw material, weighed at a molar ratio of 1:1:1, added deionized water or absolute ethanol as a ball milling medium, and mixed and ball milled at a speed of 350 r / min for 8 hours using a planetary ball mill. Dry the powder after ball milling, then put it into a high-temperature furnace with argon gas at atmospheric pressure for solid-phase synthesis reaction, raise the temperature to 400-700 degrees at a rate of 3 degrees per minute, keep it warm for 2 hours, and then cool naturally to room temperature. The reacted powder was ball-milled for 8 hours for the second time, and dried for later use. Put the powder after high-temperature synthesis and secondary ball milling into a steel mold for axial pressure preforming. The preformed green body is tightly wrapped and molded under 200MPa isostatic pressure to obtain the final green body. Then the target is sintered according to the sintering method of Example 1.

Embodiment 3

[0026] Take Cu 2 S, ZnS, SnS 2 The powder is used as the raw material, weighed at a molar ratio of 1:1:1, added deionized water or absolute ethanol as a ball milling medium, and mixed and ball milled at a speed of 350 r / min for 8 hours using a planetary ball mill. Dry the powder after ball milling, then put it into a high-temperature furnace with argon gas at atmospheric pressure for solid-phase synthesis reaction, raise the temperature to 400-700 degrees at a rate of 3 degrees per minute, keep it warm for 2 hours, and then cool naturally to room temperature. The reacted powder was ball-milled for 8 hours for the second time, and dried for later use. Put the powder after high-temperature synthesis and secondary ball milling into a hot-press sintering mold, fill it with an inert gas (argon or nitrogen, etc.) Raise the heating rate to 700-800 degrees per minute, keep the temperature for 2 hours, then cool down to room temperature with the furnace, take it out after pressure r...

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Abstract

The invention provides a copper-zinc-tin-sulfur or copper-zinc-tin-selenium target for an absorbed layer of a thin-film solar battery. The target is characterized in that: the molar ratio of Cu:Zn:Sn:S is (1.8-2.2):(0.8-1.2):(0.8-1.2):(3.6-4.4) in the target or the molar ratio of Cu:Zn:Sn:Se is (1.8-2.2):(0.8-1.2):(0.8-1.2):(3.6-4.4), wherein Cu2ZnSnX4 (X is S or Se) is taken as a main phase in the target. The invention also provides a method for preparing the target and application of the target to the preparation of films of absorbed layers of solar batteries. A Cu2ZnSnX4 (X is S or Se) film can be directly prepared through magnetron sputtering or pulsed laser deposition. The process is simple; and the prepared target has uniform components and high density, and is particularly suitable for preparing Cu2ZnSnX4 (X is S or Se) absorbed layers of thin-film solar batteries through magnetron sputtering and pulsed laser deposition systems.

Description

technical field [0001] The invention relates to the field of photoelectric functional materials, in particular to a key target material of copper-zinc-tin-sulfur or copper-zinc-tin-selenium thin-film photoelectric conversion materials for thin-film solar cells, and a preparation method and application thereof. Background technique [0002] The two main factors currently limiting the large-scale application of solar cells are high price and low efficiency. Cu(In,Ga)Se 2 Compound thin-film solar cells such as (CIGS) and CdTe have been considered as one of the new thin-film solar cells with application prospects due to their low preparation cost and high photoelectric conversion efficiency (the highest efficiency in the world reaches 19.9% ​​and 16.5% respectively). one. However, the resource scarcity of In element and the toxicity of Cd element limit the large-scale application of CIGS and CdTe thin film solar cells, respectively. [0003] In recent years, Cu 2 wxya 4 (X=...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/00C01B19/00H01L31/18
CPCY02P70/50
Inventor 孙琳褚君浩杨平雄
Owner EAST CHINA NORMAL UNIV
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