An invention is provided for a chemical mechanical planarization apparatus for processing 300 millimeter wafers. The CMP apparatus includes a polishing belt having a belt tension in a range of about 3000 lbs to 4000 lbs. In addition, a platen is disposed below the polishing belt at a positive platen height. The platen includes at least three air pressure zones, with each air pressure zone being capable of providing air pressure to a backside of the polishing belt. The platen can include, for example, eight air pressure zones. In this aspect, a second air pressure zone adjacent to a first outermost air pressure zone provides an air pressure in a range of about 30 psi to 50 psi, such as about 34 psi. In addition, a third air pressure zone a fourth pressure zone can each provide an air pressure in a range of about 4 psi to 13 psi, such as about 7 psi. In this aspect, the remaining air pressure zones can be set to 0 psi, which conserves fluid consumption. Additional fluid consumption reduction can be achieved using a plurality of check values disposed within an air supply system coupled to the platen, wherein the check values prevent negative airflow into the platen.