The application belongs to the technical field of
ion plating and specifically relates to a strip-shaped
planar magnetron cathode with high target material utilization, which comprises a strip-shaped target material, a back plate, inner magnetic steels and outer magnetic steels, wherein the strip-shaped target material is fixed on the back plate, the outer magnetic steels are arranged on the side of the back plate opposite to the strip-shaped target material and contain at least one N-S magnetic pole pair, and the inner magnetic steels are completely embedded in the back plate, and each inner magnetic steel is arranged between the N-pole outer magnetic steel and the S-pole outer magnetic steel of the N-S magnetic pole pair. Each N-S magnetic pole pair generates a first parallel
magnetic field B1 on the surface of the strip-shaped target material, and the inner magnetic steel between the N-S magnetic pole pair generates a second parallel
magnetic field B2 on the surface of the strip-shaped target material, which is opposite to the direction of the first parallel
magnetic field B1, and B1>B2. The inner magnetic steels with a specific magnetic field design are embedded in the back plate, the effect that the
etching surface parallel magnetic field decreases with the increase of
etching depth is achieved by embedding the inner magnetic steels, the target material is uniformly etched, and the target material utilization is improved.