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A Substrate Eccentric Rotation Method for Improving Thickness Uniformity of Magnetron Sputtering Rectangular Target

A magnetron sputtering, uniform film thickness technology, applied in sputtering coating, ion implantation coating, metal material coating process and other directions, can solve the problem of uneven film thickness, and achieve the effect of improving the uniformity of film thickness

Active Publication Date: 2016-05-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0008] The invention solves the problem of non-uniform thickness of the film in the prior art when the film is formed on the substrate by the magnetron sputtering method by providing a substrate eccentric rotation method that improves the uniformity of the film thickness of the magnetron sputtering rectangular target. Technical problems, and then achieved the technical effect of improving the uniformity of film thickness

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  • A Substrate Eccentric Rotation Method for Improving Thickness Uniformity of Magnetron Sputtering Rectangular Target
  • A Substrate Eccentric Rotation Method for Improving Thickness Uniformity of Magnetron Sputtering Rectangular Target
  • A Substrate Eccentric Rotation Method for Improving Thickness Uniformity of Magnetron Sputtering Rectangular Target

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Embodiment Construction

[0022] The invention solves the problem of non-uniform thickness of the film in the prior art when the film is formed on the substrate by the magnetron sputtering method by providing a substrate eccentric rotation method for improving the film thickness uniformity of the magnetron sputtering rectangular target. technical problems, and then achieve the technical effect of improving the uniformity of film thickness.

[0023] In order to solve the above-mentioned technical problem of non-uniform thickness of the thin film when the magnetron sputtering method is used to form the thin film on the substrate, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0024] First of all, in the scheme in the prior art, the size of the planar rectangular target is 180mm×60mm×5mm, the length of the straight side L of the sputtering runway area is 100mm, and the inner diameter of the curve is r 1 =1...

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Abstract

The invention discloses a substrate eccentric rotation method for improving the film thickness uniformity of a magnetron sputtering rectangular target. A rectangular planar magnetron sputtering target is fixed in a vacuum chamber, and a circular substrate is laid opposite to the rectangular target and rotates around the center axis of the circular substrate. The method is characterized by comprising the following contents: adjusting the eccentric distance D of the center of the circular substrate in the short side direction of the rectangular target, so as to ensure that D meets the following conditions: D is equal to (0.92 to 1.08) multiplied by (0.5H minus 0.067L plus 23.1), wherein H is the distance length from the rectangular target to the circular substrate, and L is the length of the long side of the rectangular target, and further the technical effect that the film thickness uniformity is improved can be realized.

Description

technical field [0001] The invention relates to the technical field of thin film preparation, in particular to a substrate eccentric rotation method for improving the film thickness uniformity of a magnetron sputtering rectangular target. Background technique [0002] Most films must meet some degree of thickness uniformity when they are applied. Sputtering is a commonly used thin film preparation method. In order to improve the uniformity of film thickness, it is usually based on the shape of the sputtering target (plane circular target, rectangular target, facing target, hollow cathode target, etc.), using a suitable substrate- Target relative motion method, and optimize the relative geometric orientation and distance of substrate and target. [0003] For rectangular planar sputtering targets, the currently used substrate motion methods mainly include linear scanning, circular rotation scanning, and planetary motion (joint motion of public rotation and rotation). Either ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/54
Inventor 杜晓松赵瑾珠郭攀孙凤佩袁欢蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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