48results about How to "Improve sputtering effect" patented technology

An ion source apparatus includes a rare gas supply source supplying rare gas instead of ion source gas to a plasma chamber, means to determine time and timing for cleaning electrodes in consideration of a collecting amount of insulation layers accreting to the electrodes of an extraction electrode system. Based on the above, the ion source apparatus removes the insulation layers by sputtering with ion beam of the rare gas while adjusting extraction or accelerate voltage and supply amount of the rare gas as a setting parameter. Moreover, by adjusting the setting parameter which changes a diameter of ion beam based on the rare gas when the ion beam collides onto each electrode surface of the extraction electrode system, the beam diameter is focused within an effective range in which intension of the sputtering of the insulation layers is maximized thus evenly removing the insulation layers.

There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma.

The invention provides a tantalum target and a manufacturing method thereof; the manufacturing method comprises the steps: firstly, performing a first forging to a tantalum ingot and obtaining a primary forged blank; performing a second forging and a first thermal treatment to the primary forged blank obtained in the previous step and obtaining a secondary forged blank; performing a third forging and a second thermal treatment to the secondary forged blank obtained in the previous step and obtaining a tertiary forged blank; performing a fourth forging and a third thermal treatment to the tertiary forged blank obtained in the previous step and obtaining a quartus forged blank; and finally, rolling and performing a fourth thermal treatment to the quartus forged blank obtained in the previous step and obtaining the tantalum target; the first forging is a rotary forging; the temperature of the first forging is 800-1400 degrees centigrade. The prepared tantalum target is uniform in texture distribution, small in grain size and capable of satisfying usage requirements in high-level semiconductor film-coating industries.

The invention relates to a surface treatment method and particularly relates to a low-temperature rapid ion nitriding method of austenitic stainless steel. According to the method disclosed by the invention, a thicker ion nitriding layer can be obtained by changing gas pressure in an ion nitriding furnace and performing heat preservation for a period of time at the ion nitriding temperature of 350-370 DEG C. The preparation method comprises the following steps of: firstly removing oil stains on the austenitic stainless steel, performing pre-grinding treatment on a test sample, and then performing ultrasonic cleaning and drying in an organic solvent; then placing the well prepared test sample into a vacuum chamber of an ion nitriding device, performing vacuum-pumping operation to the required vacuum degree, and then introducing hydrogen to perform ion bombard cleaning; and finally adjusting ion nitriding pressure and heat preservation time during the low-temperature ion nitriding process to obtain the thicker nitriding layer so as to solve the problems of thin ion nitriding layer and poor wear resistance under low-temperature conditions. By using the method disclosed by the invention to perform ion nitriding and respectively perform heat preservation for 4h, 6h and 8h, the maximum thickness of the nitriding layer can respectively achieve 22.2 mu m, 29.6 mu m and 51.7 mu m.

There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma.

The invention discloses a weather-resistant silver mirror which is particularly suitable for trough solar thermal power generation and a preparation method thereof. The silver mirror orderly consists of a transparent substrate, a first Al2O3 adhesive layer, an Ag reflective layer, a second Al2O3 adhesive protective layer and a SiOx protective layer. The preparation method thereof comprises the step of orderly and respectively plating the first Al2O3 adhesive layer, the Ag reflective layer, the second Al2O3 adhesive protective layer and the SiOx protective layer by adopting a multi-target intermediate frequency response vertical magnetic control sputter to prepare the weather-resistant silver mirror of the invention. The finished product of the weather-resistant silver mirror of the invention has the characteristics of high reflectivity, reliable work, long service life and the like. The preparation method of the invention has the characteristics of advance, reasonability, low cost, low energy consumption, good quality of the finished product and the like.

The invention provides a method for target material component welding. The method comprises the following steps that an aluminum target material and a copper back board are provided; silver is plated on a face to be welded of the aluminum target material to form a silver middle layer; the aluminum target material with the silver middle layer and the copper back board are placed in a vacuum bag, the silver middle layer is located between the aluminum target material and the copper back board, and the vacuum bag is arranged in a welding device; the hot isostatic pressure technology is used for welding the aluminum target material with the silver middle layer and the copper back board together to form a target material component; after welding is completed, the vacuum bag is cooled and removed, so that the target material component is obtained. The method is high in welding efficiency, the formed target material component is good in welding binding rate, high in welding strength and small in deformation, the internal organization structure of the aluminum target material in the target material component meets the sputtering requirement, and therefore requirements for long-time stable production and using of target materials can be met.

A (CoFe)ZrNb/Ta/Hf based target material is provided which is capable of achieving a high sputtering efficiency and a high sputtering effect by increasing the leakage magnetic flux in the magnetron sputtering, and a method for producing the target material. This target material is made of an Fe—Co based alloy comprising not less than 80 atomic % in total of Fe and Co having an Fe:Co atomic ratio of 80:20 to 0:100, and less than 20 atomic % of one or more selected from the group consisting of Zr, Hf, Nb and Ta. The Fe—Co based alloy comprises a Co—Fe phase being a ferromagnetic phase, and the one or more selected from the group consisting of Zr, Hf, Nb and Ta are solid-solved into the Co—Fe phase in a total amount of 0.5 to 2 atomic %.

A magnetron plasma sputtering apparatus includes a sputtering chamber having a loading portion and an engaging portion opposite to the loading portion. A substrate is mounted to the loading portion. A target is mounted to the engaging portion. A sputtering space is defined between the loading portion and the engaging portion. A reference line extends through the loading portion, the sputtering space, and the engaging portion in sequence. A guiding coil surrounds the sputtering space with the reference line located in the center. A magnetron device is located at a side of the sputtering chamber adjacent to the engaging portion. The magnetron device has a magnetization side facing the engaging portion.

The present invention provides a magnetic circuit for a magnetron sputtering apparatus, which produces arc-shaped magnetic field lines of high magnetic field strength over a target surface, and has an improved demagnetization resistance. The magnetic circuit includes: an inner magnet; an outer magnet having a magnetization direction opposite to that of the inner magnet, and surrounding the inner magnet; a horizontally magnetized magnet disposed between the inner and outer magnets, and magnetized in a direction perpendicular to those of the inner and outer magnets, and in a direction from the inner magnet to the outer magnet, or from the outer magnet to the inner magnet; and a yoke configured so that a magnetic flux passes through the yoke between the inner and outer magnets, in which a magnetic coercive force of the horizontally magnetized magnet is greater in a region closer to the target side than in a center of the magnet interior.

The present invention discloses a nickel-rhenium alloy rotary tubular target containing trace rare earth elements and a preparation method thereof. The target comprises the following components in percentages by mass: Re 2-5%, Zr 0.02-0.1%, B 0.05-0.1%, Mg 0.01-0.05% and balance of Ni and inevitable impurities. The preparation method includes the processes such as vacuum melting, atomization ingotting, sintering, hot isostatic pressing, hot forging, hot rolling, cross roll piercing, annealing and machining. The invention is the rotary tubular target; the utilization rate of the material is improves; furthermore the target microstructure is fine and uniform; and the quality is higher. The invention is the integral target with low gas content and high purity; the target can return to a furnace as the returned material even after use; and the cost is saved.

The invention relates to a preparation method of a MoS2 ceramic target. The preparation method comprises the following steps: drying and sieving a MoS2 raw material powder to obtain a MoS2 powder having a uniform particle size distribution and no agglomeration; uniformly introducing the MoS2 powder into a mold, carrying out hot-press sintering under vacuum conditions, and then carrying out coolingand demolding to obtain a sintered blank; and machining the sintered blank to obtain the target meeting size and surface quality requirements. The preparation method has the advantages of simple technological process, good forming effect, good cost effectiveness, facilitation of industrialized large-scale production, and broad application prospect; the prepared target has a high purity being notless than 99.5%, and has small and uniform crystal grains, the average grain size is not more than 5 [mu]m, the density is not less than 95%, and the target is a single MoS2 phase structure; and the target has stable performances and a good sputtering effect, and can improve the tribological property of a coating as a source material for preparing a solid lubricating coating.

The invention relates to a preparation method for a high-density TiB2 ceramic target material, wherein the preparation method includes the following steps: step one, drying and sieving a TiB2 raw material powder, to obtain a TiB2 powder having uniform particle size distribution and no caking; and step two, evenly filling a mould with the TiB2 powder, carrying out hot pressing sintering in a vacuumcondition, then cooling, and demoulding, to obtain the high-density TiB2 ceramic target material. According to the method, no any sintering aid is added, the powder is compressed by using the hot pressing process subsequently, the technological process is simplified, the production cycle is shortened, and the mass production can be achieved; the prepared TiB2 target material has the purity of more than or equal to 99.8%, the optimal average grain size reaching less than or equal to 2 [mu]m and the density reaching up to 99.6%; and the target material has a structure of single TiB2 phase, no alloy phase or harmful grain boundary is formed, the arc-starting electro-discharge phenomenon in a sputtering process is improved, and a prepared film layer has the advantages of high density, fewer surface defects and better sputtering effect.

The invention discloses a preparation method of high-tap-density niobium oxide. The preparation method comprises the following steps: neutralization and sedimentation; washing and defluorination; drying; calcining; and sieving, wherein in the neutralization and sedimentation step, a high-purity niobium liquid is neutralized by ammonia gas for 2-4 hours till the pH is equal to 9-10; high-purity niobium hydroxide obtained by washing and defluorination is squeezed for 4-10 hours; high-purity niobium oxide which is calcined and cooled is sieved by a 30-mesh sieve. According to the high-tap-density niobium oxide prepared by the method disclosed by the invention, the tap density is greater than 1.5g/cm<3> and the diameter D50 is equal to 10-12 mu m. According to the high-tap density niobium oxide prepared by the method disclosed by the invention, the shrinking percentage and porosity in the target calcining and forming process are effectively reduced, thereby facilitating target moulding. The sputtering performance of the target is improved.

The invention relates to a welding method of a WTi target material assembly. The welding method comprises the following steps that a WTi target material, an aluminum back plate and a cover plate are assembled and then placed into a sheath to be subjected to degassing treatment and welding in sequence; a groove is formed in the welding surface of the WTi target material; the welding surface of thealuminum back plate is subjected to alkali treatment; and assembling is conducted in a manner that the aluminum back plate and the cover plate are symmetrically assembled by taking the WTi target material as the center. According to the welding method, the groove is formed in the welding surface of the target material, the welding surface of the back plate is subjected to alkali treatment, and a specific assembling mode is adopted, so that effective welding of the WTi target material and the aluminum back plate is realized, the internal stress is obviously reduced, no crack is generated, the sputtering effect is enhanced, and the service life is long.