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Preparation method for non-bonding-phase pure-carbonation tungsten target material

A tungsten carbide, non-adhesive technology, applied in the field of materials, can solve the problems that cannot meet the requirements of large-scale, batch-scale industrial production, size restrictions, poor stability, etc., and achieve improved arc discharge phenomenon, dense coating, and performance stable effect

Active Publication Date: 2018-01-23
北京安泰六九新材料科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, SPS sintering is limited by the size of the sample and has poor stability, which cannot meet the requirements of large-scale, batch-scale industrial production.

Method used

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  • Preparation method for non-bonding-phase pure-carbonation tungsten target material
  • Preparation method for non-bonding-phase pure-carbonation tungsten target material
  • Preparation method for non-bonding-phase pure-carbonation tungsten target material

Examples

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specific Embodiment approach

[0030] A specific embodiment of the method for preparing a binder-free pure tungsten carbide target provided by the present invention includes the following steps:

[0031] Step A: Prepare materials, choose Fibonacci average particle size of 0.6-5 μm (such as 0.7 μm, 0.8 μm, 1.0 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3.0 μm, 3.5 μm, 4.0 μm, 4.5 μm, 4.8 μm), Pure tungsten carbide powder with a purity of more than 99.9% is used as the raw material powder, and passed through a 100-mesh sieve to break the agglomeration and disperse the raw material powder to control the uniformity of the powder particle size. After sieving, take the undersieve and fill it into the mould.

[0032] Step B: mold loading, uniformly fill the powder obtained in step A into a special graphite mold according to a certain filling method. When filling, it is necessary to control the uniformity of the filling powder. If the uniformity of the powder filling is poor, it will easily lead to uneven density of the pressed ...

Embodiment 1-10

[0039] Table 1 has listed the raw material composition of embodiment 1-10, preparation process parameter, and concrete preparation steps are as follows:

[0040] (1) Prepare materials, pass the above-mentioned pure tungsten carbide raw material powder through a 100-mesh sieve, take the under-sieve powder for the next step, see Table 1 for the Fischer average particle size of the under-sieve powder, and sieve can control the uniformity of the powder particle size;

[0041] (2) moulding, the powder that step (1) obtains is evenly filled in the isostatic graphite mould;

[0042] (3) Hot-press sintering, place the powdered isostatic graphite mold in step (2) in a hot-press furnace, evacuate to below 5Pa, heat up to the sintering temperature, and carry out hot-press sintering, specific sintering parameters See Table 1;

[0043] (4) Demoulding. After sintering, the mold is air-cooled with the furnace, and after the temperature in the furnace is lower than 200°C, it is released from...

Embodiment 10-14

[0053] In Examples 10-14, except that the particle size of the powder is different from that of Example 4, other process parameters are the same as those of Example 4. See Table 3 for the particle size of pure tungsten carbide powder and target performance parameters in Examples 10-14.

[0054] Raw material composition, preparation process parameter of table 3 embodiment 10-14

[0055]

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Abstract

The invention provides a preparation method for a non-bonding-phase pure-carbonation tungsten target material. The method comprises the steps that pure-carbonation tungsten raw material powder is screened firstly to obtain pure-carbonation tungsten powder with the even particle size; then a mould is evenly filled with the pure-carbonation tungsten powder, hot-pressing sintering treatment is conducted under the vacuum condition, cooling is conducted, and then mould release is conducted to obtain a sintered blank; and finally, the sintered blank is machined to obtain the non-bonding-phase pure-carbonation tungsten target material meeting the size and surface-quality requirements. According to the preparation method for the non-bonding-phase pure-carbonation tungsten target material, the technique is simple, the forming effect is good, and industrialized large-scale production is facilitated; the target material does not contain any bonding phase component, grains are even, the average grain size is 5 [mu]m or below, the compactness can reach 99% or more, and the purity is 99.9% or more; and according to the target material, the arc starting discharging phenomenon in the sputtering process is reduced, the surface defects of a prepared film layer are few, a coating is more compact, the target material can be used for preparing an adulteration phase of diamond-like carbon (DLC) coating and a transitional layer, and coating mechanical performance and tribological performance are improved.

Description

technical field [0001] The invention belongs to the technical field of materials, and relates to a method for preparing a binder-free pure tungsten carbide target without adding any binder. Background technique [0002] Pure tungsten carbide materials are used in the field of surface hard coatings, especially as doping elements for the preparation of diamond-like coatings (DLC coatings) due to their high hardness, good corrosion resistance, and excellent high-temperature oxidation resistance. As well as the transition layer material, the internal stress of the DLC coating is improved, the bonding strength of the coating is increased, and the mechanical properties and tribological properties of the coating are improved. [0003] The solid-phase sintering resistance between pure tungsten carbide powders is very high, and it is difficult to obtain a high-density material with a density of more than 99% without the addition of a binder. The current research on pure tungsten car...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C04B35/56C04B35/622C04B35/645
Inventor 张凤戈梁俊才李建奎魏铁峰张欠男
Owner 北京安泰六九新材料科技有限公司
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