Plasma processing device and method

A plasma and processing device technology, which is applied in the fields of plasma, semiconductor/solid-state device manufacturing, discharge tubes, etc., can solve the problem that the etching selectivity ratio of Low-k film and SiC layer cannot be fully ensured
CN102256431AActive Publication Date: 2011-11-23TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TOKYO ELECTRON LTD
Publication Date
2011-11-23

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Abstract

The invention provides a plasma processing device and a method. The plasma processing device comprises an accommodating treated substrate and a processing container which can perform vacuum discharging; first electrodes relatively configured in the processing container and second electrodes for bearing the accommodating treated substrate; a first high frequency electric power enforcement unit of high frequency electric power for enforcing plasma to the electrodes; a second high frequency electric power enforcement unit of high frequency electric power for enforcing plasma to the electrodes; a direct current source for enforcing direct current to the first electrodes; and a processing gas supply unit for supplying gas to the processing container.
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Description

[0001] This case is filed on June 21, 2005 , the application number is 200580020518.0 (PCT / JP2005 / 011333) , the name of the invention is Plasma treatment apparatus and method divisional application of the patent application. technical field

[0002] The present invention relates to a plasma processing device, a plasma processing method, and a computer-readable storage medium for performing plasma processing on substrates to be processed such as semiconductor substrates. Background technique

[0003] For example, in the manufacturing process of a semiconductor device, in order to form a predetermined pattern on a predetermined layer formed on a semiconductor wafer as a substrate to be processed, a plasma etching process using a resist as a mask and etching with plasma is often used.

[0004] As a plasma etching apparatus for performing such plasma etching, various apparatuses are used, and a capacitive coupling type parallel plate plasma processing apparatus is mainly us...

Claims

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