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Nickel-rhenium alloy rotary tubular target containing trace rare earth elements and preparation method thereof

A rare earth element and rhenium alloy technology, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of low alloy target density, many defects in as-cast structure, low utilization rate, and low quality. Achieve the effects of high gas content, good sputtering effect and improved utilization

Active Publication Date: 2019-11-22
南京达迈科技实业股份有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because of the above-mentioned special requirements on the performance of the target, its preparation process is relatively complicated.
[0005] In the patent TW105102091, the Re element is also used to refine the grains, but this patent is a flat target, and it is directly processed by wire cutting in the as-cast state. The as-cast structure has many defects, the gas content is large, and the quality is poor.
[0006] In the patent CN201210553666.0, the niobium oxide rotating target is prepared by plasma spraying technology, but the alloy target prepared by spraying technology has low density, high gas content, low utilization rate and low quality

Method used

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  • Nickel-rhenium alloy rotary tubular target containing trace rare earth elements and preparation method thereof
  • Nickel-rhenium alloy rotary tubular target containing trace rare earth elements and preparation method thereof
  • Nickel-rhenium alloy rotary tubular target containing trace rare earth elements and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0035] The composition and content of the nickel-rhenium alloy rotating tubular target in this embodiment are, by mass percentage, respectively: Re 2%, Zr 0.05%, B 0.06%, Mg 0.03%, and the balance of Ni and unavoidable impurities.

[0036] The preparation process route of the nickel-rhenium alloy rotating tubular target is as follows: figure 1 As shown, it specifically includes the following steps:

[0037](1) Raw material preparation: Prepare raw material electrolytic nickel, rhenium particles, metal chromium, metal zirconium, metal magnesium according to the above-mentioned component content, wherein the purity of raw materials is 99.95% electrolytic nickel, 99.99% rhenium particles, 99.11% metal chromium, 99.36% metal zirconium, 99.9% metal magnesium;

[0038] (2) Vacuum smelting of nickel ingots: use industrial alcohol to remove the dirt on the surface of electrolytic nickel, remove oxides with dilute nitric acid, put the treated electrolytic nickel into a melting crucibl...

Embodiment 2

[0047] The composition and content of the nickel-rhenium alloy rotating tubular target in this embodiment are, by mass percentage, respectively: Re 4%, Zr 0.02%, B 0.05%, Mg 0.01%, and the balance of Ni and unavoidable impurities.

[0048] The preparation method of the nickel-rhenium alloy rotating tubular target in this embodiment is basically the same as that in Embodiment 1, the difference is that:

[0049] In step (2), the melting temperature is 1700° C., and the melting time is 70 minutes;

[0050] In step (3), the vacuum degree of atomization is 10 -3 Pa, the atomization temperature is 1700°C, and the atomization pressure is 8MPa;

[0051] In step (4), the hot isostatic pressing process parameters are 900°C, 135MPa, 3.5h; the sintering temperature is 1300°C, and the sintering pressure is 400bar;

[0052] In step (5), the initial ingot is hot forged, the forging temperature is 1300°C, and the terminal temperature is 1000°C;

[0053] In step (6), the piercing temperatur...

Embodiment 3

[0057] The composition and content of the nickel-rhenium alloy rotating tubular target in this embodiment are, by mass percentage, respectively: Re 5%, Zr 0.03%, B 0.1%, Mg 0.04%, and the balance of Ni and unavoidable impurities.

[0058] The preparation method of the nickel-rhenium alloy rotating tubular target in this embodiment is basically the same as that in Embodiment 1, the difference is that:

[0059] In step (2), the smelting temperature is 1600°C, and the smelting time is 90min;

[0060] In step (3), the atomization vacuum is 1Pa, the atomization temperature is 1500°C, and the atomization pressure is 7MPa;

[0061] In step (4), the hot isostatic pressing process parameters are 950°C, 130MPa, 2h; the sintering temperature is 1100°C, and the sintering pressure is 450bar;

[0062] In step (5), the initial ingot is subjected to hot forging and hot rolling forming, the forging temperature is 1230°C, the terminal temperature is 980°C; the rolling temperature is 1130°C, an...

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Abstract

The present invention discloses a nickel-rhenium alloy rotary tubular target containing trace rare earth elements and a preparation method thereof. The target comprises the following components in percentages by mass: Re 2-5%, Zr 0.02-0.1%, B 0.05-0.1%, Mg 0.01-0.05% and balance of Ni and inevitable impurities. The preparation method includes the processes such as vacuum melting, atomization ingotting, sintering, hot isostatic pressing, hot forging, hot rolling, cross roll piercing, annealing and machining. The invention is the rotary tubular target; the utilization rate of the material is improves; furthermore the target microstructure is fine and uniform; and the quality is higher. The invention is the integral target with low gas content and high purity; the target can return to a furnace as the returned material even after use; and the cost is saved.

Description

technical field [0001] The invention relates to a target material of magnetron sputtering equipment and a preparation method thereof, in particular to a nickel-rhenium alloy rotary tubular target material containing trace rare earth elements used for magnetron sputtering and a preparation method thereof. Background technique [0002] With the rapid development of the electronic information industry, the application of thin film science is becoming more and more extensive. The sputtering method is one of the main technologies for preparing thin film materials, and the source material for sputtering deposited thin films is the target material. The film deposited by sputtering with the target has high density and good adhesion. Since the 1990s, new devices and new materials in the microelectronics industry have developed rapidly. Electronics, magnetism, optics, optoelectronics and superconducting thin films have been widely used in high-tech and industrial fields, prompting th...

Claims

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Application Information

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IPC IPC(8): C23C14/35C22C1/04C22C19/03C22F1/10
CPCC22C1/0433C22C19/03C22F1/10C23C14/3414C23C14/35
Inventor 吴宇宁袁志钟卿海标
Owner 南京达迈科技实业股份有限公司
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